Search Results - "Kruszka, Renata"

In-situ thin film copper–copper thermocompression bonding for quantum cascade lasers by Rouhi, Sina, Ozdemir, Mehtap, Ekmekcioglu, Merve, Yigen, Serap, Demirhan, Yasemin, Szerling, Anna, Kosiel, Kamil, Kozubal, Maciej, Kruszka, Renata, Prokaryn, Piotr, Ertugrul, Mehmet, Reno, John L., Aygun, Gulnur, Ozyuzer, Lutfi

“…The choice of metals, bonding conditions and interface purity are critical parameters for the performance of metal–metal bonding quality for quantum cascade…”
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The interplay between damage- and chemical-induced isolation mechanism in Fe+-implanted AlGaN/GaN HEMT structures by Pągowska, Karolina, Kozubal, Maciej, Taube, Andrzej, Kruszka, Renata, Kamiński, Maciej, Kwietniewski, Norbert, Juchniewicz, Marcin, Szerling, Anna

“…This work presents the development of Fe ion implantation processes for the fabrication of thermally stable isolation of AlGaN/GaN high electron mobility…”
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Ohmic contact formation to GaN by Si+ implantation doping: Retarding layer, implantation fluence, encapsulation, and activation annealing temperature studies by Kozubal, Maciej A., Karolina, Pągowska, Andrzej, Taube, Renata, Kruszka, Iwona, Sankowska, Eliana, Kamińska

“…The aspects of Si+ implantation for low resistivity ohmic contact formation to gallium nitride (GaN) with moderate annealing temperatures for dopant activation…”
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Fabrication of Ultralow‐Bevel Angle Mesa Structures for Vertical GaN Devices by Tarenko, Jarosław, Kamiński, Maciej, Taube, Andrzej, Ekielski, Marek, Kruszka, Renata, Zadura, Magdalena, Szerling, Anna, Prystawko, Paweł, Boćkowski, Michał, Król, Krystian, Jankowska‐Śliwińska, Joanna, Komorowska, Katarzyna, Grzegory, Izabella

“…Low‐angle bevel mesa structures are the key technological ideas needed to produce high‐quality vertical GaN devices. Nevertheless, the literature lacks…”
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Ohmic contact formation to GaN by Ge+ implantation doping: Implantation fluence and encapsulation layer studies by Kozubal Maciej, A., Karolina, Pągowska, Andrzej, Taube, Renata, Kruszka, Monika, Masłyk, Kamińska, Eliana

“…This work investigates aspects of electrical doping of gallium nitride (GaN) by Ge+ ion implantation for low-resistivity ohmic contacts, with particular…”
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Selective etching of p-GaN over Al0.25Ga0.75N in Cl2/Ar/O2 ICP plasma for fabrication of normally-off GaN HEMTs by Taube, Andrzej, Kamiński, Maciej, Ekielski, Marek, Kruszka, Renata, Jankowska-Śliwińska, Joanna, Michałowski, Paweł P., Zdunek, Joanna, Szerling, Anna

“…The article presents the results of development of selective etching of p-GaN over Al0.25Ga0.75N in Cl2/Ar/O2 ICP plasma for fabrication of normally-off p-GaN…”
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Temperature-dependent electrical characterization of high-voltage AlGaN/GaN-on-Si HEMTs with Schottky and ohmic drain contacts by Taube, Andrzej, Kaczmarski, Jakub, Kruszka, Renata, Grochowski, Jakub, Kosiel, Kamil, Gołaszewska-Malec, Krystyna, Sochacki, Mariusz, Jung, Wojciech, Kamińska, Eliana, Piotrowska, Anna

“…[Display omitted] •We fabricated HV AlGaN/GaN-on-Si HEMTs with Schottky and ohmic drain electrodes.•We examine impact of temperature on the electrical…”
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Electrical isolation of GaAs and AlGaAs/GaAs Quantum Cascade Lasers by deep hydrogen implantation by Kozubal, Maciej Artur, Szerling, Anna, Kosiel, Kamil, Myśliwiec, Marcin, Pągowska, Karolina, Jakieła, Rafał, Kruszka, Renata, Guziewicz, Marek, Barcz, Adam

“…Ion implantation can be applied to form the electrical isolation in AlGaAs/GaAs Quantum Cascade Laser (QCL) instead of mesa etching. In this paper, we present…”
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Influence of capping SiO2 layer on stability of NiO thin film under thermal stress by Grochowski, J., Guziewicz, M., Borysiewicz, M., Sidor, Z., Kruszka, R., Piotrowska, A.

“…NiO thin films deposited by RF reactive magnetron sputtering at room temperature were characterized by low optical transmittance, high acceptors concentration…”
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