Search Results - "Krusor, B. S."
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Radiation induced recombination centers in organic solar cells
Published in Physical review. B, Condensed matter and materials physics (25-05-2012)“…Prolonged x-ray exposure of bulk heterojunction organic solar cells induces deep trap states that are observed in measurements of the photocurrent spectral…”
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2
Phase separation in InGaN/GaN multiple quantum wells
Published in Applied physics letters (06-04-1998)“…Evidence is presented for phase separation in In0.27Ga0.73N/GaN multiple quantum wells. After annealing for 40 h at a temperature of 950 °C, the absorption…”
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3
Utilizing high resolution and reconfigurable patterns in combination with inkjet printing to produce high performance circuits
Published in Applied physics letters (22-09-2014)“…Inkjet printing on pre-fabricated high-resolution substrate is developed to improve the operational speed of printed organic transistors. The high-resolution…”
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4
Microstructure of GaN epitaxy on SiC using AlN buffer layers
Published in Applied physics letters (17-07-1995)“…The crystalline structure of GaN epilayers on (0001) SiC substrates has been studied using x-ray diffraction and transmission microscopy. The films were grown…”
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5
Structure of GaN films grown by hydride vapor phase epitaxy
Published in Applied physics letters (20-10-1997)“…The structure of GaN films grown by hydride vapor phase epitaxy on sapphire substrates has been studied by x-ray diffraction, transmission electron microscopy…”
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6
Polycrystalline nitride semiconductor light-emitting diodes fabricated on quartz substrates
Published in Applied physics letters (17-04-2000)“…We demonstrate the feasibility of polycrystalline nitride semiconductor light-emitting diodes (LEDs). Here, polycrystalline LEDs were deposited on quartz…”
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7
Interdiffusion of In and Ga in InGaN quantum wells
Published in Applied physics letters (31-08-1998)“…Interdiffusion of In and Ga is observed in InGaN/GaN multiple quantum wells for annealing temperatures of 1300–1400 °C. Hydrostatic pressures of up to 15 kbar…”
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8
Structural and optical properties of pseudomorphic InxGa1−xN alloys
Published in Applied physics letters (28-09-1998)“…Thick (225 nm) InxGa1−xN layers, grown on 5 μm thick GaN, were found by x-ray diffraction (XRD) measurements to be pseudomorphic up to x=0.114. Transmission…”
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Electronic and structural properties of GaN grown by hydride vapor phase epitaxy
Published in Applied physics letters (08-07-1996)“…The electronic and structural properties of GaN were investigated for heteroepitaxial layers grown by hydride vapor phase epitaxy. Uniform film nucleation on…”
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10
Structure of GaN films grown by molecular beam epitaxy on (0001) sapphire
Published in Journal of electronic materials (01-03-1997)Get full text
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11
610-nm band AlGaInP single quantum well laser diode
Published in IEEE photonics technology letters (01-02-1994)“…The short-wavelength limits of AlGaInP visible laser diodes with Al/sub 0.5/In/sub 0.5/P cladding layers, and Ga/sub x/In/sub 1/spl minus/x/P single quantum…”
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12
MOCVD growth and characterization of AlGaInN multiple quantum well heterostructures and laser diodes
Published in Materials science & engineering. B, Solid-state materials for advanced technology (06-05-1999)“…We demonstrate room temperature, pulsed, current-injected operation of InGaAlN heterostructure laser diodes with mirrors fabricated by chemically assisted ion…”
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13
Graded-thickness samples for molecular beam epitaxial growth studies of GaAs/Si heteroepitaxy
Published in Applied physics letters (23-05-1988)“…In this letter we discuss the technique of graded-thickness sample deposition for studying the growth mechanisms of GaAs heteroepitaxy on Si. We can observe…”
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14
Low threshold, 633 nm, single tensile-strained quantum well Ga0.6In0.4P/(Al x Ga1− x )0.5In0.5P laser
Published in Applied physics letters (20-04-1992)“…Low threshold, 633 nm diode lasers are demonstrated. These devices contain a single, 80 Å, tensile-strained Ga0.6In0.4P quantum well (QW) active region, and…”
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15
Characterization of AlGaInN diode lasers with mirrors from chemically assisted ion beam etching
Published in Applied physics letters (30-03-1998)“…Current-injection InGaAlN heterostructure laser diodes grown by metalorganic chemical vapor deposition on sapphire substrates are demonstrated with mirrors…”
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16
Phase separation in annealed InGaN/GaN multiple quantum wells
Published in Journal of crystal growth (01-06-1998)“…In-rich second phases were detected by transmission electron microscopy (TEM) in In0.27Ga0.73N multiple quantum well (MQW) samples that were annealed at 950°C…”
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Journal Article -
17
Characteristics of InGaN-AlGaN multiple-quantum-well laser diodes
Published in IEEE journal of selected topics in quantum electronics (01-05-1998)“…We demonstrate room-temperature pulsed current-injected operation of InGaAlN heterostructure laser diodes with mirrors fabricated by chemically assisted ion…”
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Journal Article -
18
Effect of Si doping on the strain and defect structure of GaN thin films
Published in Physica. B, Condensed matter (01-12-1999)“…The amount of strain was measured in GaN films using X-ray diffraction, Raman, and curvature techniques as a function of film thickness and the Si doping…”
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19
Ultraviolet–ozone cleaning of silicon surfaces studied by Auger spectroscopy
Published in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures (01-01-1989)Get full text
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20
54.1: Flexible Electrophoretic Displays with Jet-Printed Active-Matrix Backplanes
Published in SID International Symposium Digest of technical papers (01-05-2005)“…We report on the integration of electrophoretic media with flexible backplanes. The active‐matrix backplanes are based on amorphous‐silicon or on…”
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