Search Results - "Krusor, B. S."

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  1. 1

    Radiation induced recombination centers in organic solar cells by Street, R. A., Northrup, J. E., Krusor, B. S.

    “…Prolonged x-ray exposure of bulk heterojunction organic solar cells induces deep trap states that are observed in measurements of the photocurrent spectral…”
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    Journal Article
  2. 2

    Phase separation in InGaN/GaN multiple quantum wells by McCluskey, M. D., Romano, L. T., Krusor, B. S., Bour, D. P., Johnson, N. M., Brennan, S.

    Published in Applied physics letters (06-04-1998)
    “…Evidence is presented for phase separation in In0.27Ga0.73N/GaN multiple quantum wells. After annealing for 40 h at a temperature of 950 °C, the absorption…”
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    Journal Article
  3. 3

    Utilizing high resolution and reconfigurable patterns in combination with inkjet printing to produce high performance circuits by Mei, P., Ng, T. N., Lujan, R. A., Schwartz, D. E., Kor, S., Krusor, B. S., Veres, J.

    Published in Applied physics letters (22-09-2014)
    “…Inkjet printing on pre-fabricated high-resolution substrate is developed to improve the operational speed of printed organic transistors. The high-resolution…”
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    Journal Article
  4. 4

    Microstructure of GaN epitaxy on SiC using AlN buffer layers by Ponce, F. A., Krusor, B. S., Major, J. S., Plano, W. E., Welch, D. F.

    Published in Applied physics letters (17-07-1995)
    “…The crystalline structure of GaN epilayers on (0001) SiC substrates has been studied using x-ray diffraction and transmission microscopy. The films were grown…”
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    Journal Article
  5. 5

    Structure of GaN films grown by hydride vapor phase epitaxy by Romano, L. T., Krusor, B. S., Molnar, R. J.

    Published in Applied physics letters (20-10-1997)
    “…The structure of GaN films grown by hydride vapor phase epitaxy on sapphire substrates has been studied by x-ray diffraction, transmission electron microscopy…”
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    Journal Article
  6. 6

    Polycrystalline nitride semiconductor light-emitting diodes fabricated on quartz substrates by Bour, D. P., Nickel, N. M., Van de Walle, C. G., Kneissl, M. S., Krusor, B. S., Mei, Ping, Johnson, N. M.

    Published in Applied physics letters (17-04-2000)
    “…We demonstrate the feasibility of polycrystalline nitride semiconductor light-emitting diodes (LEDs). Here, polycrystalline LEDs were deposited on quartz…”
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    Journal Article
  7. 7

    Interdiffusion of In and Ga in InGaN quantum wells by McCluskey, M. D., Romano, L. T., Krusor, B. S., Johnson, N. M., Suski, T., Jun, J.

    Published in Applied physics letters (31-08-1998)
    “…Interdiffusion of In and Ga is observed in InGaN/GaN multiple quantum wells for annealing temperatures of 1300–1400 °C. Hydrostatic pressures of up to 15 kbar…”
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    Journal Article
  8. 8

    Structural and optical properties of pseudomorphic InxGa1−xN alloys by Romano, L. T., Krusor, B. S., McCluskey, M. D., Bour, D. P., Nauka, K.

    Published in Applied physics letters (28-09-1998)
    “…Thick (225 nm) InxGa1−xN layers, grown on 5 μm thick GaN, were found by x-ray diffraction (XRD) measurements to be pseudomorphic up to x=0.114. Transmission…”
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    Journal Article
  9. 9

    Electronic and structural properties of GaN grown by hydride vapor phase epitaxy by Götz, W., Romano, L. T., Krusor, B. S., Johnson, N. M., Molnar, R. J.

    Published in Applied physics letters (08-07-1996)
    “…The electronic and structural properties of GaN were investigated for heteroepitaxial layers grown by hydride vapor phase epitaxy. Uniform film nucleation on…”
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    Journal Article
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    610-nm band AlGaInP single quantum well laser diode by Bour, D.P., Treat, D.W., Beernink, K.J., Krusor, B.S., Geels, R.S., Welch, D.F.

    Published in IEEE photonics technology letters (01-02-1994)
    “…The short-wavelength limits of AlGaInP visible laser diodes with Al/sub 0.5/In/sub 0.5/P cladding layers, and Ga/sub x/In/sub 1/spl minus/x/P single quantum…”
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    Journal Article
  12. 12

    MOCVD growth and characterization of AlGaInN multiple quantum well heterostructures and laser diodes by Bour, D.P, Kneissl, M, Hofstetter, D, Romano, L.T, McCluskey, M, Van de Walle, C.G, Krusor, B.S, Dunnrowicz, C, Donaldson, R, Walker, J, Johnson, N.M

    “…We demonstrate room temperature, pulsed, current-injected operation of InGaAlN heterostructure laser diodes with mirrors fabricated by chemically assisted ion…”
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    Journal Article Conference Proceeding
  13. 13

    Graded-thickness samples for molecular beam epitaxial growth studies of GaAs/Si heteroepitaxy by BIEGELSEN, D. K, PONCE, F. A, KRUSOR, B. S, TRAMONTANA, J. C, YINGLING, R. D

    Published in Applied physics letters (23-05-1988)
    “…In this letter we discuss the technique of graded-thickness sample deposition for studying the growth mechanisms of GaAs heteroepitaxy on Si. We can observe…”
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    Journal Article
  14. 14

    Low threshold, 633 nm, single tensile-strained quantum well Ga0.6In0.4P/(Al x Ga1− x )0.5In0.5P laser by Bour, D. P., Treat, D. W., Thornton, R. L., Paoli, T. L., Bringans, R. D., Krusor, B. S., Geels, R. S., Welch, D. F., Wang, T. Y.

    Published in Applied physics letters (20-04-1992)
    “…Low threshold, 633 nm diode lasers are demonstrated. These devices contain a single, 80 Å, tensile-strained Ga0.6In0.4P quantum well (QW) active region, and…”
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    Journal Article
  15. 15

    Characterization of AlGaInN diode lasers with mirrors from chemically assisted ion beam etching by Kneissl, M., Bour, D. P., Johnson, N. M., Romano, L. T., Krusor, B. S., Donaldson, R., Walker, J., Dunnrowicz, C.

    Published in Applied physics letters (30-03-1998)
    “…Current-injection InGaAlN heterostructure laser diodes grown by metalorganic chemical vapor deposition on sapphire substrates are demonstrated with mirrors…”
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    Journal Article
  16. 16

    Phase separation in annealed InGaN/GaN multiple quantum wells by Romano, L.T, McCluskey, M.D, Krusor, B.S, Bour, D.P, Chua, C, Brennan, S, Yu, K.M

    Published in Journal of crystal growth (01-06-1998)
    “…In-rich second phases were detected by transmission electron microscopy (TEM) in In0.27Ga0.73N multiple quantum well (MQW) samples that were annealed at 950°C…”
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    Journal Article
  17. 17

    Characteristics of InGaN-AlGaN multiple-quantum-well laser diodes by Bour, D.P., Kneissl, M., Romano, L.T., McCluskey, M.D., Van deWalle, C.G., Krusor, B.S., Donaldson, R.M., Walker, J., Dunnrowicz, C.J., Johnson, N.M.

    “…We demonstrate room-temperature pulsed current-injected operation of InGaAlN heterostructure laser diodes with mirrors fabricated by chemically assisted ion…”
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    Journal Article
  18. 18

    Effect of Si doping on the strain and defect structure of GaN thin films by Romano, L.T, Van de Walle, C.G, Krusor, B.S, Lau, R, Ho, J, Schmidt, T, Ager III, J.W, Götz, W, Kern, R.S

    Published in Physica. B, Condensed matter (01-12-1999)
    “…The amount of strain was measured in GaN films using X-ray diffraction, Raman, and curvature techniques as a function of film thickness and the Si doping…”
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    Journal Article
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    54.1: Flexible Electrophoretic Displays with Jet-Printed Active-Matrix Backplanes by Daniel, J. H., Arias, A. C., Wong, W. S., Lujan, R., Krusor, B. S., Apte, R. B., Chabinyc, M. L., Salleo, A., Street, R. A., Chopra, N., Iftime, G., Kazmaier, P. M.

    “…We report on the integration of electrophoretic media with flexible backplanes. The active‐matrix backplanes are based on amorphous‐silicon or on…”
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    Journal Article