Search Results - "Krumbein, U."
-
1
Optimized terminal current calculation for Monte Carlo device simulation
Published in IEEE transactions on computer-aided design of integrated circuits and systems (01-10-1997)“…We present a generalized Ramo-Shockley theorem (GRST) for the calculation of time-dependent terminal currents in multidimensional charge transport calculations…”
Get full text
Journal Article -
2
A comparison of the switching behavior of IGBT and MCT power devices
Published in [1993] Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs (1993)“…Measured and simulated turn-off curves of high-voltage MCTs (MOS-controlled thyristors) and IGBTs (insulated-gate bipolar transistors) are presented. Device…”
Get full text
Conference Proceeding
-
3
Approaching homogeneous switching of MCT devices: experiment and simulation
Published in [1993] Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs (1993)“…Problems in scaling the MCT (MOS-controlled thyristor) to higher turn-off currents (I/sub TGM/) still need to be resolved. It is shown experimentally that…”
Get full text
Conference Proceeding -
4
Simulation-Based Design of an Electrostatically Driven Micro-Actuator for Fluid Transport in Mobile Applications
Published in 2019 20th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE) (01-03-2019)“…The emerging lab-on-chip technology for in-situ medical use and environmental surveillance brought with it the demand for new, micro-scale actuator designs…”
Get full text
Conference Proceeding -
5
Simulation-based design of a micro fluidic transportation system for mobile applications based on ultrasonic actuation
Published in 2018 19th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE) (01-04-2018)“…Enabling efficient gas transport by small and integrated microsystems became of major interest and gained momentum since much more attention is paid to…”
Get full text
Conference Proceeding -
6
Temperature-dependent study of 6H-SiC pin-diode reverse characteristics
Published in 1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) (1996)“…Silicon carbide is a promising material for special semiconductor applications, such as high-power and high-temperature devices. To date, much effort has been…”
Get full text
Conference Proceeding -
7
Combined Opto-Electronical Simulation of Metal-Semiconductor-Metal (MSM) Photodetectors
Published in ESSDERC '96: Proceedings of the 26th European Solid State Device Research Conference (01-09-1996)“…A complete opto-electronical simulation of a metal-semiconductor-metal (MSM) photodetector is presented. We combined rigorous electromagnetic theory for…”
Get full text
Conference Proceeding -
8
Interdigitated metal-semiconductor-metal (MSM) structures-rigorous treatment of light propagation
Published in Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society (1996)“…Light propagation in a periodic interdigitated metal-semiconductor-metal (MSM) structure is modelled by means of rigorous electromagnetic theory. The effects…”
Get full text
Conference Proceeding -
9
On The Origin Of Tunneling Currents In Scaled Silicon Devices
Published in [Proceedings] 1993 International Workshop on VLSI Process and Device Modeling (1993 VPAD) (1993)Get full text
Conference Proceeding