Search Results - "Krukov, V. L."

Vertical Field-Effect Transistor with a Controlling GaAs-Based p–n Junction by Vostokov, N. V., Daniltsev, V. M., Kraev, S. A., Krukov, V. L., Skorokhodov, E. V., Strelchenko, S. S., Shashkin, V. I.

“…The first results on the development of an original power GaAs-based field-effect transistor with a vertical channel controlled by a p – n junction are…”
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Capacitance spectroscopy of hole traps in high-resistance gallium-arsenide structures grown by liquid-phase epitaxy by Murel, A. V., Shmagin, V. B., Krukov, V. L., Strelchenko, S. S., Surovegina, E. A., Shashkin, V. I.

“…Three deep acceptor levels with activation energies of ~0.7, ~0.41, and ~0.16 eV are found in GaAs structures, which have the hole type of conductivity and are…”
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