Search Results - "Krozer, V"

Antenna-coupled field-effect transistors for multi-spectral terahertz imaging up to 4.25 THz by Bauer, M, Venckevičius, R, Kašalynas, I, Boppel, S, Mundt, M, Minkevičius, L, Lisauskas, A, Valušis, G, Krozer, V, Roskos, H G

“…We demonstrate for the first time the applicability of antenna-coupled field-effect transistors for the detection of terahertz radiation (TeraFETs) for…”
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A 3-D Printed Helix for Traveling-Wave Tubes by Ulisse, G., Schurch, P., Hepp, E., Koelmans, W. W., Doerner, R., Krozer, V.

“…In this work, a 3-D printed copper helix for a traveling-wave tube (TWT) is reported. The fabricated helix was designed to be used in a TWT operating at…”
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A Highly Linear Dual-Stage Amplifier With Beyond 1.75-THz Gain-Bandwidth Product by Shivan, T., Hossain, M., Doerner, R., Yacoub, H., Johansen, T. K., Heinrich, W., Krozer, V.

“…This work reports a multipurpose highly linear ultrawideband amplifier with a gain-bandwidth product (GBP) of 1.75 THz, the highest reported in any monolithic…”
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A Highly Efficient Ultrawideband Traveling-Wave Amplifier in InP DHBT Technology by Shivan, T., Weimann, N., Hossain, M., Stoppel, D., Boppel, S., Ostinelli, O., Doerner, R., Bolognesi, C. R., Krozer, V., Heinrich, W.

“…This letter presents a 1 to >110-GHz ultrawideband traveling-wave amplifier (TWA) based on 500-nm transferred-substrate InP double-heterojunction bipolar…”
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A G-Band High Power Frequency Doubler in Transferred-Substrate InP HBT Technology by Hossain, M., Nosaeva, K., Janke, B., Weimann, N., Krozer, V., Heinrich, W.

“…This letter presents a G-band balanced frequency doubler with high output power, realized using a 800 nm transferred-substrate InP-HBT process. The doubler…”
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A 246 GHz Hetero-Integrated Frequency Source in InP-on-BiCMOS Technology by Hossain, Maruf, Kraemer, T., Ostermay, I., Jensen, T., Janke, B., Borokhovych, Y., Lisker, M., Glisic, S., Elkhouly, M., Borngraeber, J., Tillack, B., Meliani, C., Krueger, O., Krozer, V., Heinrich, W.

“…A 246 GHz source in InP-on-BiCMOS technology is presented. It consists of a voltage controlled oscillator (VCO) in BiCMOS technology and a frequency tripler in…”
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High Conversion Gain Up-Converter with +5 dBm OP1dB in InP DHBT Technology for Ultra Capacity Wireless Applications by Hossain, M., Shivan, T., Brahem, M., Yacoub, H., Heinrich, W., Krozer, V.

“…A fundamental frequency up-converter for ultra-capacity wireless applications with high conversion gain is presented, realized as double-balanced Gilbert cell…”
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Coupled Transmission Lines as Impedance Transformer by Jensen, T., Zhurbenko, V., Krozer, V., Meincke, P.

“…A theoretical investigation of the use of a coupled line section as an impedance transformer is presented. We show how to properly select the terminations of…”
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A 330 GHz active frequency quadrupler in InP DHBT transferred-substrate technology by Hossain, M., Nosaeva, K., Weimann, N., Krozer, V., Heinrich, W.

“…This paper presents a wideband 330 GHz frequency quadrupler using 0.8 μm transferred substrate (TS) InP-HBT technology. The process includes a heat-spreading…”
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Oscillator Phase Noise: A Geometrical Approach by Djurhuus, T., Krozer, V., Vidkjaer, J., Johansen, T.K.

“…We construct a coordinate-independent description of oscillator linear response through a decomposition scheme derived independently of any Floquet theoretic…”
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Three-dimensional InP-DHBT on SiGe-BiCMOS integration by means of Benzocyclobutene based wafer bonding for MM-wave circuits by Ostermay, I., Thies, A., Kraemer, T., John, W., Weimann, N., Schmückle, F.-J., Sinha, S., Krozer, V., Heinrich, W., Lisker, M., Tillack, B., Krüger, O.

“…[Display omitted] •Fabrication scheme for heterogenous Si-to-InP circuits on wafer level is described.•Wafer-to-wafer alignment accuracy better than 4–8μm…”
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W -Band Traveling Wave Tube Amplifier Based on Planar Slow Wave Structure by Ulisse, G., Krozer, V.

“…A novel planar slow wave structure (SWS) for traveling wave tube (TWT) is proposed. The major advantage of the planar architecture is its easy realization with…”
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Design and Simulation of a Waveguide-to-Microstripline Transition for Planar Slow Wave Structures by Ulisse, G., Krozer, V.

“…Microwave technology stands as a critical cornerstone in numerous modern applications, spanning from telecommunication and radar to high-power amplification…”
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Submicron InP DHBT Technology for High-Speed High-Swing Mixed-Signal ICs by Godin, J., Nodjiadjim, V., Riet, M., Berdaguer, P., Drisse, O., Derouin, E., Konczykowska, A., Moulu, J., Dupuy, J.-Y., Jorge, F., Gentner, J.-L., Scavennec, A., Johansen, T., Krozer, V.

“…We report on the development of a submicron InP DHBT technology, optimized for the fabrication of ges50-GHz- clock mixed-signal ICs. In-depth study of device…”
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Diamond Substrate Planar Slow-Wave Structures for Millimeter Wave Traveling Wave Tubes by Ulisse, G., Krozer, V.

“…Traveling wave tubes (TWTs) are commonly used to amplify radio frequency signals in a variety of applications, including radar systems, satellite…”
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Analysis and design of wide-band SiGe HBT active mixers by Johansen, T.K., Vidkjaer, J., Krozer, V.

“…The frequency response of SiGe HBT active mixers based on the Gilbert cell topology is analyzed theoretically. The time-varying operation of the active mixer…”
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A Full G-band Power Amplifier with 34% Peak PAE in InP-DHBT Technology by Hossain, M., Doerner, R., Heinrich, W., Krozer, V.

“…This paper presents a highly efficient full G-band power amplifier (PA) using 500 nm InP-DHBT technology. It consists of 3 stages using a cascade unit power…”
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An Efficient 400 GHz Active Multiplier-Based Signal Source for Terahertz Applications by Hossain, M., Heinrich, W., Krozer, V.

“…This paper presents a 400 GHz signal source using a 0.8 μm transferred substrate (TS) InP-HBT technology. The signal source is based on an active balanced…”
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Microwave absorption properties of gold nanoparticle doped polymers by Jiang, C., Ouattara, L., Ingrosso, C., Curri, M.L., Krozer, V., Boisen, A., Jakobsen, M.H., Johansen, T.K.

“…► Gold nanoparticles doped polymer shows the ability of absorbing microwave energy. ► On-wafer measurement method is capable of characterizing small amount of…”
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Nonlinear analysis of a cross-coupled quadrature harmonic oscillator by Djurhuus, T., Krozer, V., Vidkjaer, J., Johansen, T.K.

“…The dynamic equations governing the cross-coupled quadrature harmonic oscillator are derived assuming quasi-sinusoidal operation. This allows for an…”
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