Search Results - "Krishna, Athith"

Demonstration of a GaN/AlGaN Superlattice-Based p-Channel FinFET With High ON-Current by Raj, Aditya, Krishna, Athith, Hatui, Nirupam, Gupta, Chirag, Jang, Raina, Keller, Stacia, Mishra, Umesh K.

“…In this letter, we report on the demonstration of a Mg-doped GaN/Al 0.2 Ga 0.8 N superlattice (SL) based depletion mode p-channel FinFET to improve the on…”
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Investigation of nitrogen polar p-type doped GaN/AlxGa(1-x)N superlattices for applications in wide-bandgap p-type field effect transistors by Krishna, Athith, Raj, Aditya, Hatui, Nirupam, Keller, Stacia, Mishra, Umesh K.

“…In this study, the metal-organic chemical vapor deposition growth and electrical properties of N-polar modulation doped p-AlGaN/GaN superlattices (SLs) were…”
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GaN/AlGaN Superlattice Based E-Mode Hole Channel FinFET With Schottky Gate by Raj, Aditya, Krishna, Athith, Romanczyk, Brian, Hatui, Nirupam, Liu, Wenjian, Keller, Stacia, Mishra, Umesh K.

“…In this work, we report on a GaN/AlGaN superlattice based normally-off hole channel FinFET devices. A combination of Schottky gate and 60 nm wide fins led to…”
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N-Polar GaN-on-Sapphire Deep Recess HEMTs With High W-Band Power Density by Romanczyk, Brian, Li, Weiyi, Guidry, Matthew, Hatui, Nirupam, Krishna, Athith, Wurm, Christian, Keller, Stacia, Mishra, Umesh K.

“…This work presents recent progress in the W-band (94 GHz) power performance of N-polar GaN deep recess HEMTs grown on sapphire substrates. While SiC has been…”
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W-Band Power Performance of SiN-Passivated N-Polar GaN Deep Recess HEMTs by Romanczyk, Brian, Zheng, Xun, Guidry, Matthew, Li, Haoran, Hatui, Nirupam, Wurm, Christian, Krishna, Athith, Ahmadi, Elaheh, Keller, Stacia, Mishra, Umesh K.

“…This letter reports on the improvement of the large-signal W-band power performance of nitrogen-polar gallium nitride deep recess high electron mobility…”
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AlGaN/GaN Superlattice‐Based p‐Type Field‐Effect Transistor with Tetramethylammonium Hydroxide Treatment by Krishna, Athith, Raj, Aditya, Hatui, Nirupam, Koksaldi, Onur, Jang, Raina, Keller, Stacia, Mishra, Umesh K.

“…To realize the full spectrum of advantages that the III‐nitride materials system offers, the demonstration of p‐channel III‐nitride‐based devices is valuable…”
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Acceptor traps as the source of holes in p-type N-polar GaN/(AlN/AlGaN) superlattices by Krishna, Athith, Raj, Aditya, Hatui, Nirupam, Keller, Stacia, Denbaars, Steven, Mishra, Umesh K

“…This study experimentally shows the existence of acceptor traps at positive polarization interfaces (PPIs) acting as the source of holes in N-polar p-type…”
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High Linearity and High Gain Performance of N-Polar GaN MIS-HEMT at 30 GHz by Shrestha, Pawana, Guidry, Matthew, Romanczyk, Brian, Hatui, Nirupam, Wurm, Christian, Krishna, Athith, Pasayat, Shubhra S., Karnaty, Rohit R., Keller, Stacia, Buckwalter, James F., Mishra, Umesh K.

“…Though GaN HEMTs have primarily been used for power amplification, they are also well suited for receiver applications. In the front-end of receivers,…”
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Proposed existence of acceptor-like traps at positive polarization interfaces in p-type III-nitride semiconductors by Krishna, Athith, Raj, Aditya, Hatui, Nirupam, Sayed, Islam, Keller, Stacia, Mishra, Umesh K.

“…We propose the existence of an acceptor-like trap at positive polarization interfaces in p-type III-nitride semiconductor heterostructures, using N-polar…”
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Demonstration of Acceptor-Like Traps at Positive Polarization Interfaces in Ga-Polar P-type (AlGaN/AlN)/GaN Superlattices by Krishna, Athith, Raj, Aditya, Hatui, Nirupam, Keller, Stacia, Mishra, Umesh

“…The shortcomings with acceptors in p-type III-nitride semiconductors have resulted in not many efforts being presented on III-nitride based p-channel…”
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Investigation of nitrogen polar p-type doped GaN/AlxGa(1-x)N superlattices for applications in wide-bandgap p-type field effect transistors by Krishna, Athith, Raj, Aditya, Hatui, Nirupam, Keller, Stacia, Mishra, Umesh

“…Appl. Phys. Lett. 115, 172105 (2019) In this study the MOCVD growth and electrical properties of N-polar modulation doped p-AlGaN/GaN superlattices (SLs) were…”
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AlGaN /GaN superlattice based p-channel field effect transistor (pFET) with TMAH treatment by Krishna, Athith, Raj, Aditya, Hatui, Nirupam, Koksaldi, Onur, Jang, Raina, Keller, Stacia, Mishra, Umesh

“…To realize the full spectrum of advantages that the III-nitride materials system offers, the demonstration of p-channel III-nitride based devices is valuable…”
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Investigation of p-Type GaN / AlGaN Superlattices: Defining a Pathway Towards Low Sheet Resistance for p-Channel III-Nitride Devices by Krishna, Athith

“…Post the commercialization and widespread use in light emitting diodes (LEDs), heterostructures of III-nitride semiconductors (GaN, AlN, InN, and BN) with…”
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Strong Confinment of optical fields using localised surface phonon polaritons in cubic Boron Nitride by Chatzakis, Ioannis, Krishna, Athith, Culbertson, James, Sharac, Nicholas, Giles, Alexander J, Spencer, Michael G, Caldwell, a nd Joshua D

“…Optics Letters Vol. 43, Issue 9, pp. 2177-2180 (2018) Phonon polaritons (PhPs) are long-lived electromagnetic modes that originate from the coupling of…”
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A Novel Concept using Derivative Superposition at the Device-Level to Reduce Linearity Sensitivity to Bias in N-polar GaN MISHEMT by Shrestha, Pawana, Guidry, Matthew, Romanczyk, Brian, Karnaty, Rohit R., Hatui, Nirupam, Wurm, Christian, Krishna, Athith, Pasayat, Shubhra S., Keller, Stacia, Buckwalter, James F., Mishra, Umesh K.

“…N-polar GaN MISHEMTs have recently demonstrated excellent power performance and power-added efficiency at 94 GHz [1] . At mm-wave frequencies and high data…”
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Demonstration of acceptor-like traps at positive polarization interfaces in Ga-polar p-type (AlGaN/AlN)/GaN superlattices by Krishna, Athith, Raj, Aditya, Hatui, Nirupam, Keller, Stacia, Mishra, Umesh

“…This study experimentally shows the existence of acceptor traps at positive polarization interfaces acting as the source of holes in Ga-polar p-type uniformly…”
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