Search Results - "Kriegler, R. J."
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1
Neutralization of Na+ Ions in ``HCl-Grown'' SiO2
Published in Applied physics letters (01-06-1972)“…Current-voltage measurements and radiotracer experiments have been carried out to examine the nature of the passivation mechanism responsible for the reduction…”
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Journal Article -
2
IVa-2 Determination of surface state capture cross section from transfer loss measurements in CCD's
Published in IEEE transactions on electron devices (01-09-1977)Get full text
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WA-A6 Determination of intrinsic noise contributions in surface-channel CCD's
Published in IEEE transactions on electron devices (01-11-1978)Get full text
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4
Dielectric loss and current-Voltage measurements in sodium-contaminated Si-SiO2-Cr structures
Published in IEEE transactions on electron devices (01-08-1973)“…A detailed study of the small-signal ac response of ntentionally sodium-contaminated Si-SiO 2 -Cr structures has been made with mobile ion concentrations of 10…”
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5
Determination of transfer noise from transfer-loss measurements in SCCD's
Published in IEEE transactions on electron devices (01-01-1983)“…A simple technique is described that allows the determination of surface-state-induced transfer noise from transfer-loss measurements in surface-channel…”
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6
Dielectric relaxation in Si-SiO2-Cr structures
Published in IEEE transactions on electron devices (01-01-1970)“…The dielectric behavior of thermally grown SiO 2 was examined using Si-SiO 2 -Cr structures. The relaxation spectrum exhibits a time dependence indicative of…”
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7
Dielectric loss and current - Voltage measurements in sodium-contaminated Si - SiO(2) - Cr structures
Published in IEEE transactions on electron devices (01-08-1973)“…A detailed study of the small-signal ac response of ntentionally sodium-contaminated Si-SiO(2)-Cr structures has been made with mobile ion concentrations of…”
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Journal Article -
8
Dielectric relaxation in Si - SiO(2) - Cr structures
Published in IEEE transactions on electron devices (01-11-1970)“…The dielectric behavior of thermally grown SiO(2)was examined using Si-SiO(2)-Cr structures. The relaxation spectrum exhibits a time dependence indicative of…”
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Journal Article -
9
Ion Instabilities in MOS Structures
Published in 12th International Reliability Physics Symposium (01-04-1974)“…Sodium and a few other alkali metal impurities, introduced during processing into the SiO2 gate insulator of MOS devices, are easily ionized and are…”
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Conference Proceeding -
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Determination of surface- and bulk-generation parameters from dark-current measurements in surface-channel CCD's
Published in IEEE transactions on electron devices (01-09-1985)“…A technique for determining surface-generation velocity and bulk minority-carrier generation lifetime from measurements in surface-channel charge-coupled…”
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