Search Results - "Krasil'nik, Z F"

Emission Properties of Heavily Doped Epitaxial Indium-Nitride Layers by Andreev, B. A., Lobanov, D. N., Krasil’nikova, L. V., Bushuykin, P. A., Yablonskiy, A. N., Novikov, A. V., Davydov, V. Yu, Yunin, P. A., Kalinnikov, M. I., Skorohodov, E. V., Krasil’nik, Z. F.

“…The results of studies of the spontaneous photoluminescence and stimulated emission spectra of epitaxial n -InN layers with a concentration of free electrons…”
Get full text

Stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on GaAs and Ge/Si(001) substrates by Yablonsky, A. N., Morozov, S. V., Gaponova, D. M., Aleshkin, V. Ya, Shengurov, V. G., Zvonkov, B. N., Vikhrova, O. V., Baidus’, N. V., Krasil’nik, Z. F.

“…We report the observation of stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on Si(001) substrates with the…”
Get full text

Microscopic structure of Er-related optically active centers in crystalline silicon by Vinh, N Q, Przybylińska, H, Krasil'nik, Z F, Gregorkiewicz, T

“…A successful observation and analysis of the Zeeman effect on the lambda approximately 1.54 microm photoluminescence band in Er-doped crystalline MBE-grown…”
Get full text

Optical properties of a single type of optically active center in Si ∕ Si : Er nanostructures by Vinh, N. Q., Przybylińska, H., Krasil’nik, Z. F., Gregorkiewicz, T.

Get full text

Spectral selection of excitonic transitions in a dense array of CdSe/ZnSe quantum dots by Shubina, T. V., Rodina, A. V., Semina, M. A., Golovatenko, A. A., Toropov, A. A., Rakhlin, M. V., Sedova, I. V., Sorokin, S. V., Gronin, S. V., Sitnikova, A. A., Kuritsyn, D. I., Sergeev, S. M., Krasil'nik, Z. F., Ivanov, S. V.

“…authoren We demonstrate that the selection of a limited number of single excitonic lines from a dense array of epitaxial quantum dots (QDs) can be realized…”
Get full text

Kinetics of the Luminescence Response of Self-Assembled Ge(Si) Nanoislands Embedded in Two-Dimensional Photonic Crystals by Yablonskiy, A. N., Novikov, A. V., Stepikhova, M. V., Sergeev, S. M., Baidakova, N. A., Shaleev, M. V., Krasilnik, Z. F.

“…The results of studies of the spectral and kinetic characteristics of the photoluminescence of photonic crystals formed on the basis of structures with…”
Get full text

Effect of tensile-strained Si layer on photoluminescence of Ge(Si) self-assembled islands grown on relaxed SiGe/Si(001) buffer layers by Shaleev, M. V., Novikov, A. V., Yablonskiĭ, A. N., Kuznetsov, O. A., Drozdov, Yu. N., Krasil’nik, Z. F.

“…The results of studying the photoluminescence of the structures with Ge(Si) self-assembled islands embedded into tensile-strained Si layer are reported. The…”
Get full text

Si/SiGe: Er/Si structures for laser realization: Theoretical analysis and luminescent studies by Stepikhova, M.V., Krasil’nikova, L.V., Krasil’nik, Z.F., Shengurov, V.G., Chalkov, V.Yu, Svetlov, S.P., Zhigunov, D.M., Timoshenko, V.Yu, Kashkarov, P.K.

“…In this work we present the results of theoretical calculations and experimental studies carried out for Si/Si 1− X Ge X : Er/Si heterostructures that show…”
Get full text

Electroluminescence at 1.54 μm in Si:Er/Si structures grown by sublimation molecular-beam epitaxy by Kuznetsov, V. P., Remizov, D. Yu, Shabanov, V. N., Rubtsova, R. A., Stepikhova, M. V., Kryzhov, D. I., Shushunov, A. N., Belova, O. V., Krasil’nik, Z. F., Maksimov, G. A.

“…In Si:Er/Si diode structures grown by sublimation molecular-beam epitaxy in a vacuum with a pressure of ∼10−7 mbar at temperatures 520–580°C, the intensity of…”
Get full text

Low-energy photoluminescence of structures with GeSi/Si(001) self-assembled nanoislands by Vostokov, N. V., Drozdov, Yu. N., Krasil’nik, Z. F., Lobanov, D. N., Novikov, A. V., Yablonskii, A. N.

Get full text

The exciton excitations and relaxation processes in low-dimensional semiconductor heterostructures with quantum wells by Aleshkin, V. Ya, Gavrilenko, L. V., Gaponova, D. M., Krasil’nik, Z. F., Kryzhkov, D. I.

“…The processes associated with the transfer of excitonic excitations between tunnel-uncoupled quantum wells (QW) and the influence of the local electric field…”
Get full text

Population inversion of the energy levels of erbium ions induced by excitation transfer from the semiconductor matrix in Si-Ge based structures by Stepikhova, M. V., Zhigunov, D. M., Shengurov, V. G., Timoshenko, V. Yu, Krasil’nikova, L. V., Chalkov, V. Yu, Svetlov, S. P., Shalygina, O. A., Kashkarov, P. K., Krasil’nik, Z. F.

Get full text

Optical properties of Si/Si:Er multi-nanolayer structures grown by SMBE method by Ngoc Ha, Ngo, Krasil’nik, Z.F., Gregorkiewicz, T.

“…Among Er-doped crystalline Si materials, Si/Si:Er multi-nanolayer structures grown by sublimation molecular beam epitaxy (SMBE) technique present extraordinary…”
Get full text

Photoluminescence of self-assembled GeSi/Si(001) nanoislands of different shapes by Vostokov, N. V., Krasil’nik, Z. F., Lobanov, D. N., Novikov, A. V., Shaleev, M. V., Yablonskii, A. N.

Get full text

Impurity photoconductivity in SiGe/Si:B multi-quantum-well heterostructures by Aleshkin, V.Ya, Antonov, A.V., Gavrilenko, V.I., Kozlov, D.V., Krasil’nik, Z.F., Lobanov, D.N., Novikov, A.V.

“…A new theoretical method for calculation of acceptor energy spectra in Si/SiGe quantum well heterostructures, taking into account the anisotropy effects has…”
Get full text

Self-organization of germanium nanoislands obtained in silicon by molecular-beam epitaxy by Aleshkin, V. Ya, Bekin, N. A., Kalugin, N. G., Krasil’nik, Z. F., Novikov, A. V., Postnikov, V. V., Seyringer, H.

Get full text

The elastic strain and composition of self-assembled GeSi islands on Si(001) by Krasil'nik, Z.F, Dolgov, I.V, Drozdov, Yu.N, Filatov, D.O, Gusev, S.A, Lobanov, D.N, Moldavskaya, L.D, Novikov, A.V, Postnikov, V.V, Vostokov, N.V

“…The paper presents the results of investigation of self-assembled GeSi islands growth on Si(001) at 700 degree C and the evolution of Ge islands parameters…”
Get full text

Correlation between the energy of SiGe nanoislands and their shape and size by Valakh, M. Ya, Dzhagan, V. N., Krasil’nik, Z. F., Lytvyn, P. M., Lobanov, D. N., Mozdor, E. V., Novikov, A. V., Yukhymchuk, V. A., Yaremko, A. M.

Get full text

Effect of growth conditions on photoluminescence of erbium-doped silicon layers grown using sublimation molecular-beam epitaxy by Shengurov, V. G., Svetlov, S. P., Chalkov, V. Yu, Andreev, B. A., Krasil’nik, Z. F., Kryzhkov, D. I.

Get full text

Structural and photoluminescence properties of heteroepitaxial silicon-on-sapphire layers by Svetlov, S. P., Chalkov, V. Yu, Shengurov, V. G., Drozdov, Yu. N., Krasil’nik, Z. F., Krasil’nikova, L. V., Stepikhova, M. V., Pavlov, D. A., Pavlova, T. V., Shilyaev, P. A., Khokhlov, A. F.

Get full text