Evaluation of the bulk and strip characteristics of large area n-in- p silicon sensors intended for a very high radiation environment

The ATLAS collaboration R&D group “Development of n-in- p Silico n Sensors for very high radiation environment” has developed single-sided p-type 9.75 cm×9.75 cm sensors with an n-type readout strips having radiation tolerance against the 10 15 1-MeV neutron equivalent (n eq)/cm 2 fluence expect...

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Published in:	Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Vol. 636; no. 1; pp. S104 - S110
Main Authors:	Bohm, J., Mikestikova, M., Affolder, A.A., Allport, P.P., Bates, R., Betancourt, C., Brown, H., Buttar, C., Carter, J.R., Casse, G., Chen, H., Chilingarov, A., Cindro, V., Clark, A., Dawson, N., DeWilde, B., Doherty, F., Dolezal, Z., Eklund, L., Fadeyev, V., Ferrere, D., Fox, H., French, R., Garcia, C., Gerling, M., Gonzalez Sevilla, S., Gorelov, I., Greenall, A., Grillo, A.A., Hara, K., Hatano, H., Hoeferkamp, M., Hommels, L.B.A., Ikegami, Y., Jakobs, K., Kierstead, J., Kodys, P., Köhler, M., Kohriki, T., Krambergen, G., Lacasta, C., Li, Z., Lindgren, S., Lynn, D., Maddock, P., Mandic, I., Marti i Garcia, S., Martinez-McKinney, F., Maunu, R., McCarthy, R., Metcalfe, J., Mikuz, M., Minano, M., Mitsui, S., O'Shea, V., Paganis, S., Parzefall, U., Puldon, D., Robinson, D., Sadrozinski, H.F.-W., Sattari, S., Schamberger, D., Seidel, S., Seiden, A., Soldevila, U., Terada, S., Toms, K., Tsionou, D., Unno, Y., Von Wilpert, J., Wormald, M., Wright, J., Yamada, M.
Format:	Journal Article
Language:	English
Published:	Elsevier B.V 21-04-2011
Subjects:	ATLAS ID upgrade Coupling capacitance Depletion voltage Electrical characteristics Inter-strip capacitance Inter-strip resistance Leakage current Micro-strip Silicon SLHC Electrical characteristics Micro-strip SLHC Inter-strip capacitance Inter-strip resistance Depletion voltage Silicon Leakage current ATLAS ID upgrade Coupling capacitance
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Summary:	The ATLAS collaboration R&D group “Development of n-in- p Silico n Sensors for very high radiation environment” has developed single-sided p-type 9.75 cm×9.75 cm sensors with an n-type readout strips having radiation tolerance against the 10 15 1-MeV neutron equivalent (n eq)/cm 2 fluence expected in the Super Large Hadron Collider. The compiled results of an evaluation of the bulk and strip parameter characteristics of 19 new non-irradiated sensors manufactured by Hamamatsu Photonics are presented in this paper. It was verified in detail that the sensors comply with the technical specifications required before irradiation. The reverse bias voltage dependence of various parameters, frequency dependence of tested capacitances, and strip scans of more than 23,000 strips as a test of parameter uniformity and strip quality over the whole sensor area have been carried out at Stony Brook University, Cambridge University, University of Geneva, and Academy of Sciences of CR and Charles University in Prague. No openings, shorts, or pinholes were observed on all tested strips, confirming the high quality of sensors made by Hamamatsu Photonics.
ISSN:	0168-9002 1872-9576
DOI:	10.1016/j.nima.2010.04.093