Search Results - "Kräußlich, J."

Growth and defect structure of seeded solution grown Sc-substituted barium hexaferrite crystals using different seed orientation by Dubs, C., Kräußlich, J., Görnert, P.

“…Large Sc-substituted barium hexaferrite crystals were grown by submerged-seeded solution growth (SSSG) and top-seeded solution growth (TSSG) techniques using…”
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Epitaxial and polycrystalline CuInS2 layers: Structural metastability and its influence on the photoluminescence by Eberhardt, J., Cieslak, J., Metzner, H., Hahn, Th, Goldhahn, R., Hudert, F., Kräußlich, J., Kaiser, U., Chuvilin, A., Reislöhner, U., Witthuhn, W.

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Hexagonal AlN films grown on nominal and off-axis Si(0 0 1) substrates by Lebedev, V., Jinschek, J., Kräußlich, J., Kaiser, U., Schröter, B., Richter, W.

“…Nucleation and growth of wurtzite AlN layers on nominal and off-axis Si(0 0 1) substrates by plasma-assisted molecular beam epitaxy is reported. The nucleation…”
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Epitaxial Cu(In, Ga)S2 thin film solar cells by HAHN, Th, METZNER, H, CIESLAK, J, EBERHARDT, J, REISLÖHNER, U, KRÄUSSLICH, J, WUNDERLICH, F, SIEBENTRITT, S, WITTHUHN, W

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Hetero-epitaxial growth of Cu(In,Ga)S 2 on Si substrates by Metzner, H, Reislöhner, U, Cieslak, J, Witthuhn, W, Hahn, T, Kräußlich, J

“…On the way to perfectly lattice-matched Cu(In,Ga)S 2, we present the first CuGaS 2 films epitaxially grown on Si substrates and compare their structural…”
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Epitaxial Cu(In,Ga)S 2 thin film solar cells by Hahn, Th, Metzner, H., Cieslak, J., Eberhardt, J., Reislöhner, U., Kräußlich, J., Wunderlich, F., Siebentritt, S., Witthuhn, W.

“…Epitaxial layers of the quaternary compound Cu(In,Ga)S 2 and the ternary compound CuInS 2 were grown on Si(111) substrates via Molecular Beam Epitaxy. The…”
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Epitaxial growth of CuGaS2 on Si(111) by Metzner, H., Hahn, Th, Cieslak, J., Grossner, U., Reislöhner, U., Witthuhn, W., Goldhahn, R., Eberhardt, J., Gobsch, G., Kräußlich, J.

“…We demonstrate the direct heteroepitaxial growth of the ternary semiconductor CuGaS2 on Si(111) substrates by means of molecular beam epitaxy. X-ray…”
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MBE-growth of heteropolytypic low-dimensional structures of SiC by Fissel, A, Kaiser, U, Schröter, B, Kräußlich, J, Richter, W

“…The controlled growth of SiC heteropolytypic structures consisting of hexagonal (α-) and cubic (3C-) polytypes has been performed by solid-source molecular…”
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Si/Ge-nanocrystals on SiC(0001) by Heß, G, Bauer, A, Kräußlich, J, Fissel, A, Schröter, B, Richter, W, Schell, N, Matz, W, Goetz, K

“…The growth and structure of Si- and Ge-nanocrystals was investigated using high resolution X-ray diffraction (HRXRD) and atomic force microscopy (AFM)…”
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Characterisation of interfacial properties in sputtered Co/Cu multilayers: X-ray reflectometry compared with TEM and AFM by Langer, J, Kräußlich, J, Mattheis, R, Senz, St, Hesse, D

“…Combining localised and global structural information we suggest that differences in the magnetoresistive effect in the first maximum of antiferromagnetic…”
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Structural and optical properties of epitaxial CuGaS2 films on Si substrates by Metzner, H., Cieslak, J., Grossner, U., Hahn, Th, Kaiser, U., Kräußlich, J., Reislöhner, U., Witthuhn, W., Goldhahn, R., Eberhardt, J.

“…Epitaxial thin films of the wide-band-gap chalcopyrite semiconductor CuGaS2 have directly been grown on single crystalline Si substrates of (111) orientation…”
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Hetero-epitaxial growth of Cu(In,Ga)S2 on Si substrates by Metzner, H, Reislöhner, U, Cieslak, J, Witthuhn, W, Hahn, T, Kräußlich, J

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Microstructure of epitaxial CuGaS2 on Si(111) by CIESLAK, J, METZNER, H, HAHN, Th, REISLÖHNER, U, KAISER, U, KRÄUSSLICH, J, WITTHUHN, W

“…CuGaS2 has been grown epitaxially on Si(111) substrates by three-source molecular beam epitaxy. The structural properties of these layers have been…”
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Structural properties of MBE grown Cu(In,Ga)S 2 layers on Si by Metzner, H., Hahn, Th, Cieslak, J., Eberhardt, J., Müller, M., Reislöhner, U., Kaiser, U., Chuvilin, A., Kräußlich, J., Witthuhn, W.

“…The epitaxial growth of the quaternary CuIn (1− x) Ga x S 2 system with 0≤ x≤1 on silicon substrates is investigated. Using molecular beam epitaxy, the layers…”
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Growth of atomically smooth AlN films with a 5:4 coincidence interface on Si(111) by MBE by Schenk, H.P.D., Kaiser, U., Kipshidze, G.D., Fissel, A., Kräußlich, J., Hobert, H., Schulze, J., Richter, Wo

“…Epitaxial aluminum nitride AlN(0001) thin films have been grown by plasma-assisted molecular beam epitaxy (PA-MBE) on Si(111). The influence of the composition…”
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Structural properties of MBE grown Cu(In, Ga)S2 layers on Si by METZNER, H, HAHN, Th, CIESLAK, J, EBERHARDT, J, MÜLLER, M, REISLÖHNER, U, KAISER, U, CHUVILIN, A, KRÄUSSLICH, J, WITTHUHN, W

“…The epitaxial growth of the quaternary CuIn(1-x)GaxS2 system with 0 less than or equal to x less than or equal to 1 on silicon substrates is investigated…”
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X-ray investigations of MBE-grown heteroepitaxial SiC layers on 6H–SiC substrates by Bauer, A, Kräusslich, J, Köcher, B, Goetz, K, Fissel, A, Richter, W

“…3C–SiC thin films have been investigated by means of high resolution X-ray diffraction techniques ( ω/2Θ-scan, ω-scan) and X-ray topography. The SiC films were…”
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Epitaxial growth of SiC-heterostructures on α-SiC(0001) by solid-source MBE by Fissel, A., Kaiser, U., Kräußlich, J., Pfennighaus, K., Schröter, B., Schulz, J., Richter, W.

“…Epitaxial growth of SiC on α-SiC(0001) has been performed by means of solid-source molecular beam epitaxy (MBE). Low temperature ( T<1200°C) deposition on…”
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Structure refinement of the silicon carbide polytypes 4H and 6H: unambiguous determination of the refinement parameters by Bauer, A., Reischauer, Ph, Kräusslich, J., Schell, N., Matz, W., Goetz, K.

“…The atomic positions of the silicon carbide (SiC) polytypes 6 and 4 differ slightly from an ideal tetrahedron. These small deviations can be investigated by…”
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High-precision determination of atomic positions in 4H- and 6H-SiC crystals by BAUER, A, KRÄUSSLICH, J, KUSCHNERUS, P, GOETZ, K, KÄCKELL, P, BECHSTEDT, F

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