Search Results - "Kozyukhin, S.A."

The design and synthesis of thiophene-based ruthenium(II) complexes as promising sensitizers for dye-sensitized solar cells by Medved'ko, A.V., Ivanov, V.K., Kiskin, M.A., Sadovnikov, A.A., Apostolova, E.S., Grinberg, V.A., Emets, V.V., Chizhov, A.O., Nikitin, O.M., Magdesieva, T.V., Kozyukhin, S.A.

“…A new series of promising synthetically facile cycloruthenated thiophene-based sensitizers have been developed and fully characterized by UV–vis spectroscopy,…”
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Middle range order and elastic properties of non-stoichiometric chalcogenide glasses in the AsS3 - GeS4 system by Tsiulyanu, D., Kozyukhin, S.A., Ciobanu, M.

“…Longitudinal elastic modulus of glasses (GeS4)x (AsS3)1-x has been determined from experimentally measured density and ultrasound velocity with respect to the…”
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Laser-Induced Modification of the Surface of [Ge.sub.2][Sb.sub.2][Te.sub.5] Thin Films: Phase Changes and Periodic-Structure Formation by Yakovlev, S.A, Ankudinov, A.V, Vorobyov, Yu. V, Voronov, M.M, Kozyukhin, S.A, Melekh, B.T, Pevtsov, A.B

“…Submicron periodic lattices are formed at the surface of phase-change-memory film materials based on the complex chalcogenide [Ge.sub.2][Sb.sub.2][Te.sub.5]…”
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Influence of bismuth on the optical properties of [Ge.sub.2][Sb.sub.2][Te.sub.5] thin films by Nguyen, H. Ph, Kozyukhin, S.A, Pevtsov, A.B

“…Chalcogenide alloys in the Ge-Sb-Te system are promising for application in phase-change memory devices. We investigated the influence ofbismuth on the optical…”
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THERMAL STABILITY OF THE STRUCTURE AND OPTICAL PROPERTIES OF NANOSTRUCTURED TI[O.sub.2] FILMS by Mikhailova, S.L, Prikhodko, O.Yu, Mukhametkarimov, Ye.S, Dautkhan, K, Doseke, U.A, Kozyukhin, S.A, Kozik, V.V, Ismailova, G.A, Maksimova, S.Ya, Tarapeyeva, A.Yu, Zhakypov, A.S

“…The structure and optical properties of titanium dioxide films have been studied during annealing from 100 to 400[degrees]C. The films were obtained by…”
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Electrical properties and transport mechanisms in phase change memory thin films of quasi-binary-line GeTe--[Sb.sub.2][Te.sub.3] chalcogenide semiconductors by Sherchenkov, A.A, Kozyukhin, S.A, Lazarenko, P.I, Babich, A.V, Bogoslovskiy, N.A, Sagunova, I.V, Redichev, E.N

“…The temperature dependences of the resistivity and current-voltage (I-V) characteristics of phase change memory thin films based on quasi-binary-line…”
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Investigation of Electrophysical Properties of ITO Films by Zhidik, Yu. S., Troyan, P. E., Kozik, V. V., Kozyukhin, S. A., Zabolotskaya, A. V., Kuznetsova, S. A.

“…The results of a study of the electrophysical characteristics of ITO films obtained by magnetron sputtering are presented. It is shown that a significant…”
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Dielectric Properties of Nanocrystalline Tungsten Oxide in the Temperature Range of 223–293 K by Kozyukhin, S. A., Bedin, S. A., Rudakovskaya, P. G., Ivanova, O. S., Ivanov, V. K.

“…The dielectric properties of nanocrystalline tungsten oxide are studied in the temperature range of 223–293 K and in the frequency range ν = 10 –2 –10 6 Hz…”
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Investigation of the Crystallization Kinetics in Ge-Sb-Te-Bi Thin Films for Phase Change Memory Application by Babich, A.V., Sherchenkov, A.A., Kozyukhin, S.A., Timoshenkov, S.P.

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Synthesis, structure, thermal behavior, thermodynamic, magnetic and luminescent properties of Pr, Sm, Eu, and Gd cymantrenecarboxylates by Koroteev, P.S., Dobrokhotova, Zh.V., Kiskin, M.A., Lermontov, A.S., Efimov, N.N., Bogomyakov, A.S., Tyurin, A.V., Bykov, M.A., Demina, L.I., Velikodny, Yu.A., Kozyukhin, S.A., Novotortsev, V.M.

“…Four novel 3d–4f heterometallic binuclear carboxylate complexes [Ln2(μ-О,η2-OOCCym)2(μ2-OOCCym)2(η2-ООССym)2(py)4]·2py, where Ln=Pr (1), Sm (2), Eu (3), Gd (4)…”
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Peculiarities of Estimating the Optical Band Gap of Thin Films of Phase Change Memory Materials by Lazarenko, P. I., Vorobyov, Yu. V., Fedyanina, M. E., Sherchenkov, A. A., Kozyukhin, S. A., Yakubov, A. O., Kukin, A.V., Sybina, Yu. S., Sagunova, I. V.

“…The method of spectrophotometry with transmission and reflection spectra recording is used to study the peculiarities of estimating the optical band gap in Ge…”
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Integral isoconversional method for evaluating crystallization parameters of thin films of Ge2Sb2Te5 phase change memory materials by Sherchenkov, A. A., Kozyukhin, S. A., Babich, A. V., Lazarenko, P. I., Vargunin, A. I.

“…We propose a method for evaluating kinetic parameters for the crystallization of thin films of phase change materials. Its basic principle is to jointly use…”
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Influence of chalcogenide glasses electro physical parameters on threshold voltage for phase-change memory by Kozyukhin, S.A., Popov, A.I., Voronkov, E.N.

“…The simple equations have been derived for main setting parameters of phase-change memory (PCM) devices. The calculations of threshold voltage and delay time…”
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Phase separation in chalcogenide semiconductors of the Ge-Te system upon thermal cycling by Kozyukhin, S. A., Sherchenkov, A. A., Babich, A. V.

“…Close-to-eutectic compositions in the Ge-Te system are analyzed and their behavior with repeated heat treatments is studied by means of differential scanning…”
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Current--voltage characteristics of thin [Ge.sub.2][Sb.sub.2][Te.sub.5] films taken using a measuring circuit with a current source by Fefelov, S.A, Kazakova, L.P, Kozyukhin, S.A, Tsendin, K.D, Arsova, D, Pamukchieva, V

“…The measuring circuit with a voltage generator, which is traditionally used for studying electric properties of glasslike semiconductors, is compared with an…”
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The Influence of Materials of Electrodes of Sensitized Solar Cells on Their Capacitive and Electrical Characteristics by Lazarenko, P. I., Kozyukhin, S. A., Mokshina, A. I., Sherchenkov, A. A., Patrusheva, T. N., Irgashev, R. A., Lebedev, E. A., Kozik, V. V.

“…An estimation is made of the internal capacitance of sensitized solar cells (SSCs) manufactured by the method of extraction pyrolysis. The structures under…”
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Using extraction and sorption processes to obtain nanosized powders of calcium silicates and functional materials on their basis by Akat’eva, L. V., Ivanov, V. K., Kozyukhin, S. A., Gladun, V. D., Baranchikov, A. E., Zhilov, V. I., Khol’kin, A. I.

“…The review presents summary data on extracting agents and the application of sorption processes during the cycle of studies on the joint processing of calcium…”
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Phase transitions in thin [Ge.sub.2][Sb.sub.2][Te.sub.5] chalcogenide films according to Raman spectroscopy data by Avachev, A.P, Vikhrov, S.P, Vishnyakov, N.V, Kozyukhin, S.A, Mitrofanov, K.V, Terukov, E.I

“…Data on the Raman spectra of thin [Ge.sub.2][Sb.sub.2][Te.sub.5] chalcogenide semiconductor films are reported. The study is performed with the purpose of…”
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Laser Beam Structure Influence on Optical and Structural Modification of Phase-Change Materials by Smayev, M.P., Smirnov, P.A., Budagovsky, I.A., Fedyanina, M.E., Glukhenkaya, V.B., Romashkin, A.V., Lazarenko, P.I., Kozyukhin, S.A.

“…Phase-change materials allow rapid and reversible switching between the optically different amorphous and crystalline phases. The transitions of amorphous…”
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Reflectivity Changes In GST225 Thin Film Induced By Laser Pulses With Variable Duration by Guryev, D.A., Kamynin, V.A., Lazarenko, P.I., Terekhov, D.Y., Kozyukhin, S.A., Tsvetkov, V.B.

“…Phase transitions of GST225 thin films with a thickness of 150 nm were induced by laser pulses with durations ranging from 20 to 140 ns and energies ranging…”
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