Search Results - "Kozhukhova, E.A"

Properties of nanopillar structures prepared by dry etching of undoped GaN grown by maskless epitaxial overgrowth by Polyakov, A.Y., Jeon, Dae-Woo, Govorkov, A.V., Smirnov, N.B., Sokolov, V.N., Kozhukhova, E.A., Yakimov, E.B., Lee, In-Hwan

“…► GaN nanopillars were fabricated on maskless epitaxial lateral overgrowth (MELO) GaN templates. ► Formation of nanopillars is not correlated with threading…”
Get full text

Investigation of Heat Transfer in Flat Channels of Power Plants Filled with a Porous Orthotropic Structure by Kozhukhov, N.N., Konovalov, D.A., Ryazhskikh, V.I., Kozhukhova, E.A., Prutskikh, D.A.

“…The paper presents the results of a study of heat transfer in an orthotropic porous medium based on a permeability tensor. We compare the thermohydraulic…”
Get full text

Effects of annealing in oxygen on electrical properties of AlGaN/GaN heterostructures grown on Si by Polyakov, A.Y., Smirnov, N.B., Ha, Min-Woo, Hahn, Cheol-Koo, Kozhukhova, E.A., Govorkov, A.V., Ryzhuk, R.V., Kargin, N.I., Cho, Han-Su, Lee, In-Hwan

“…•We examined the effects of O2 annealing on electrical properties of AlGaN/GaN heterostructures.•O2 annealing suppresses tunneling leakage current due to…”
Get full text

Research on the Hydrodynamics of Coolant Flow in Compact Heat Exchangers Filled with an Inhomogeneous Porous Medium by Kozhukhov, N.N., Kozhukhova, E.A., Dubanin, V.Y.

“…The theoretical results of mathematical modelling of the operation of a porous compact heat exchanger with the results of experimental studies are checked…”
Get full text

Electrophysical Characteristics of TlBr Crystals Grown in Various Ambients by Smirnov, N.B., Lisitsky, I.S., Kuznetsov, M.S., Govorkov, A.V., Kozhukhova, E.A.

“…Electrophysical characteristics were measured for TlBr crystals grown by Bridgman technique in various ambients: vacuum, Ar, air, Br. The dark resistivity of…”
Get full text

Comparison of ohmic contact properties on n-GaN/p-SiC and n-AlGaN/p-SiC heterojunctions by Luo, B, Kim, J, Mehandru, R, Ren, F, Lee, K.P, Pearton, S.J, Polyakov, A.Y, Smirnov, N.B, Govorkov, A.V, Kozhukhova, E.A, Osinsky, A.V, Norris, P.E

“…GaN/SiC and Al 0.25Ga 0.75 N/SiC heterojunction diodes were fabricated using Al/Ti for p-ohmic contact to the SiC and Ti/Al/Pt/Au for n-ohmic contact to the…”
Get full text