Search Results - "Kozhukhov, S. A."

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  1. 1

    Transformation of N-Polar Inversion Domains from AlN Buffer Layers during the Growth of AlGaN Layers by Osinnykh, I. V., Malin, T. V., Kozhukhov, A. S., Ber, B. Ya, Kazancev, D. Yu, Zhuravlev, K. S.

    Published in Semiconductors (Woodbury, N.Y.) (01-06-2022)
    “…The structural properties and crystal quality of Al x Ga 1 ‒  x N/AlN/Al 2 O 3 heterostructures grown by ammonia-assisted molecular-beam epitaxy with a high…”
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    Journal Article
  2. 2

    Preparation of Atomically Clean and Structurally Ordered Surfaces of Epitaxial CdTe Films for Subsequent Epitaxy by Tarasov, A. S., Mikhailov, N. N., Dvoretsky, S. A., Menshchikov, R. V., Uzhakov, I. N., Kozhukhov, A. S., Fedosenko, E. V., Tereshchenko, O. E.

    Published in Semiconductors (Woodbury, N.Y.) (01-12-2021)
    “…An atomically clean and structurally ordered surface of the CdTe layer of a (013)-oriented GaAs/ZnTe/CdTe substrate after storage in air is obtained by…”
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    Journal Article
  3. 3

    Optical Imaging of the Visual Cortex: Spectral and Amplitude Characteristics of Vasomotor Oscillations by Kozhukhov, S. A., Saltykov, K. A., Bondar, I. V.

    Published in Neuroscience and behavioral physiology (01-05-2023)
    “…Intrinsic signal optical imaging is widely used in current studies of the functional anatomy of the cerebral cortex. However, the recorded optical signal,…”
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    Journal Article
  4. 4

    Formation of Inert Bi2Se3(0001) Cleaved Surface by Atuchin, V. V, Golyashov, V. A, Kokh, K. A, Korolkov, I. V, Kozhukhov, A. S, Kruchinin, V. N, Makarenko, S. V, Pokrovsky, L. D, Prosvirin, I. P, Romanyuk, K. N, Tereshchenko, O. E

    Published in Crystal growth & design (07-12-2011)
    “…A high quality inclusion-free Bi2Se3 crystal has been grown by the Bridgman method with the use of a rotating heat field. A large-area atomically flat…”
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    Journal Article
  5. 5

    About the nature of the barrier inhomogeneities at Au/Ti/n-InAlAs(001) Schottky contacts by Aksenov, M. S., Valisheva, N. A., Chistokhin, I. B., Dmitriev, D. V., Kozhukhov, A. S., Zhuravlev, K. S.

    Published in Applied physics letters (03-06-2019)
    “…A correlation study of InAlAs surface morphology by atomic force microscopy and a study on the temperature (78–380 K) dependence of Au/Ti/InAlAs(001) Schottky…”
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    Journal Article
  6. 6

    GaAs/AlGaAs- and InGaAs/AlGaAs-Heterostructures for High-Power Semiconductor Infrared Emitters by Gulyaev, D. V., Dmitriev, D. V., Fateev, N. V., Protasov, D. Yu, Kozhukhov, A. S., Zhuravlev, K. S.

    Published in Technical physics (01-02-2024)
    “…The internal quantum efficiency of GaAs/AlGaAs- and InGaAs/AlGaAs-heterostructures for infrared light emitter diodes has been determined. The influence of the…”
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    Journal Article
  7. 7

    Comparison of Orientational Tuning and Its Dynamics in Neurons in Different Functional Domains of the Primary Visual Cortex by Lazareva, N. A., Kozhukhov, S. A., Ivanov, R. S., Novikova, R. V., Tikhomirov, A. S., Tsutskiridze, D. Yu, Bondar’, I. V.

    Published in Neuroscience and behavioral physiology (01-06-2014)
    “…We report here studies of orientational tuning and its dynamics during generation of responses in neurons located in orientation columns and the centers of…”
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    Journal Article
  8. 8

    Growth of CdWO4 crystals by the low thermal gradient Czochralski technique and the properties of a (010) cleaved surface by Galashov, E.N., Atuchin, V.V., Kozhukhov, A.S., Pokrovsky, L.D., Shlegel, V.N.

    Published in Journal of crystal growth (01-09-2014)
    “…The high-quality CdWO4 crystal of 80–90mm in diameter and 180–200mm long has been grown by Low Thermal Gradient Czochralski technique (LTG Cz). Large area…”
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    Journal Article Conference Proceeding
  9. 9

    Alpha and Beta Oscillations in the Dynamics of the Areas and Weightings of the Receptive Fields of Striate Neurons in Cats in Classical and Combined Mapping by Lazareva, N. A., Kozhukhov, S. A., Novikova, R. V., Tikhomirov, A. S., Tsutskiridze, D. Yu, Sharaev, G. A.

    Published in Neuroscience and behavioral physiology (01-05-2013)
    “…Acute experiments on 22 anesthetized and immobilized cats were performed to produce dynamic time-slices maps of 83 on and/or off receptive fields of 47 visual…”
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    Journal Article
  10. 10

    Preparation of an Atomically Clean and Structurally Ordered Bi2Se3 (0001) Surface without Molecular Beams and Vacuum Cleaving by Tarasov, A. S., Golyashov, V. A., Akhundov, I. O., Ishchenko, D. V., Kozhukhov, A. S., Kokh, K. A., Tereshchenko, O. E.

    Published in Russian journal of physical chemistry. B (01-06-2022)
    “…In this study, an atomically clean and structurally ordered Bi 2 Se 3 (0001) surface is obtained without molecular beams and vacuum cleaving. It is shown that…”
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    Journal Article
  11. 11

    Structure and optical properties of Si and SiGe layers grown on SiO2 by chemical vapor deposition by Shklyaev, A.A., Vdovin, V.I., Volodin, V.A., Gulyaev, D.V., Kozhukhov, A.S., Sakuraba, M., Murota, J.

    Published in Thin solid films (31-03-2015)
    “…The properties of thin Si and SiGe layers grown on SiO2 by chemical vapor deposition (CVD) were studied using transmission electron and atomic force…”
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    Journal Article
  12. 12

    Forming the GaN Nanocrystals on the Graphene-Like g-AlN and g-Si3N3 Surface by Milakhin, D. S., Malin, T. V., Mansurov, V. G., Galitsyn, Yu. G., Kozhukhov, A. S., Aleksandrov, I. A., Rzheutski, N. V., Lebiadok, E. V., Razumets, E. A., Zhuravlev, K. S.

    Published in Physics of the solid state (01-12-2019)
    “…The formation of GaN nanocrystals on the graphene-like AlN ( g -AlN) modification and graphene-like ( g -Si 3 N 3 ) silicon nitride by ammonia molecular beam…”
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    Journal Article
  13. 13

    The Structure of Primary Visual Cortex Neuron Responses and its Interaction with the Dynamics of the Preferred Orientation by Kozhukhov, S. A., Saltykov, K. A., Lazareva, N. A.

    Published in Neuroscience and behavioral physiology (01-05-2017)
    “…Orientational tuning of neurons in area V1 of the cat visual cortex has observed to undergo sequential shifts during response generation. In order to identify…”
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    Journal Article
  14. 14

    The initial stages of atomic force microscope based local anodic oxidation of silicon by Kozhukhov, A. S., Scheglov, D. V., Fedina, L. I., Latyshev, A. V.

    Published in AIP advances (01-02-2018)
    “…In this paper, the initial stages of local anodic oxidation (LAO) process initiated by AFM probe are studied on the wide (∼100μm) terraces of the atomic-smooth…”
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    Journal Article
  15. 15

    Atomic Force Microscopy Local Oxidation of GeO Thin Films by Astankova, K. N., Kozhukhov, A. S., Gorokhov, E. B., Azarov, I. A., Latyshev, A. V.

    Published in Semiconductors (Woodbury, N.Y.) (01-12-2018)
    “…Metastable germanium monoxide (GeO) thin-insulating films have been investigated as a new promising material for atomic force microscope (AFM) oxidation…”
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    Journal Article
  16. 16

    Formation of a Graphene-Like SiN Layer on the Surface Si(111) by Mansurov, V. G., Galitsyn, Yu. G., Malin, T. V., Teys, S. A., Fedosenko, E. V., Kozhukhov, A. S., Zhuravlev, K. S., Cora, Ildikó, Pécz, Béla

    Published in Semiconductors (Woodbury, N.Y.) (01-12-2018)
    “…00-The kinetics of the formation and thermal decomposition of a two-dimensional SiN-(8 × 8) nitride layer on a Si(111) surface is studied. The SiN-(8 × 8)…”
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    Journal Article
  17. 17

    The Dynamics of the Weighting and Topographical Characteristics of the Excitatory Zones of the Receptive Fields of Neurons in the Cat Visual Cortex by Lazareva, N. A., Kozhukhov, S. A., Sharaev, G. A., Novikova, R. V., Tikhomirov, A. S., Tsutskiridze, D. Yu, Shevelev, I. A.

    Published in Neuroscience and behavioral physiology (01-10-2011)
    “…Acute experiments on 22 anesthetized and immobilized cats used a time slice method to study changes in the maps of 83 on and/or off receptive fields in 47…”
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    Journal Article
  18. 18

    Reversible electrochemical modification of the surface of a semiconductor by an atomic-force microscope probe by Kozhukhov, A. S., Sheglov, D. V., Latyshev, A. V.

    Published in Semiconductors (Woodbury, N.Y.) (01-04-2017)
    “…A technique for reversible surface modification with an atomic-force-microscope (AFM) probe is suggested. In this method, no significant mechanical or…”
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    Journal Article
  19. 19

    Undoped High-Resistance GaN Buffer Layer for AlGaN/GaN High-Electron-Mobility Transistors by Malin, T. V., Milakhin, D. S., Aleksandrov, I. A., Zemlyakov, V. E., Egorkin, V. I., Zaitsev, A. A., Protasov, D. Yu, Kozhukhov, A. S., Ber, B. Ya, Kazantsev, D. Yu, Mansurov, V. G., Zhuravlev, K. S.

    Published in Technical physics letters (01-08-2019)
    “…It is shown that intentionally undoped high-resistance GaN buffer layers in AlGaN/GaN heterostructures with high electron mobility for transistors can be…”
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    Journal Article
  20. 20

    AlInAs quantum dots by Gaisler, A. V., Derebezov, I. A., Gaisler, V. A., Dmitriev, D. V., Toropov, A. I., Kozhukhov, A. S., Shcheglov, D. V., Latyshev, A. V., Aseev, A. L.

    Published in JETP letters (2017)
    “…A system of quantum dots on the basis of Al x In 1-x As/Al y Ga 1-y As solid solutions has been studied. The usage of broadband Al x In 1-x solid solutions as…”
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    Journal Article