Search Results - "Kozhanova, Yu. V."

Parameters of ZnO Semiconductor Films Doped with Mn and Fe 3d Impurities by Mezdrogina, M. M., Vinogradov, A. Ya, Kozhanova, Yu. V.

“…The effect of Fe and Mn impurities on the magnetic parameters of ZnO wide-gap semiconductor films produced by high-frequency sputtering with wide variations in…”
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Formation of Luminescence Spectra and Emission Intensity in the UV and Visible Spectral Regions for n-ZnO/p-GaN and n-ZnO/p-ZnO Structures when Depositing ZnO Films by High-Frequency Magnetron Sputtering by Mezdrogina, M. M., Vinogradov, A. Ja, Kozhanova, Yu. V.

“…The emission spectra of structures based on ZnO films deposited by high-frequency magnetron sputtering are studied. Clearly pronounced emission lines…”
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LED Structures Based on ZnO Films Obtained by RF Magnetron Sputtering for the UV Spectral Range by Mezdrogina, M. M., Vinogradov, A. Ya, Kozhanova, Yu. V., Borsuk, E. A.

“…Data for the influence of different defects on the photoluminescence and electroluminescence spectra (emission intensity and wavelength) of n -ZnO/ p -GaN…”
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Intensity of visible and IR emission of intracenter 4f transitions of RE ions in Er- and Tm-doped ZnO films with additional Ag, Li, and N impurities by Mezdrogina, M. M., Vinogradov, A. Ya, Eremenko, M. V., Levitskii, V. S., Terukov, E. I., Kozhanova, Yu. V.

“…The use of Ag impurity in Er-doped ZnO films deposited by AC magnetron sputtering with a low growth rate has increased the emission intensity at λ = 1535–1540…”
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Influence of Silver and Gold Nanoparticles and Thin Layers on Charge Carrier Generation in InGaN/GaN Multiple Quantum Well Structures and Crystalline Zinc Oxide Films by Mezdrogina, M. M., Vinogradov, A. Ya, Kozhanova, Yu. V., Levitskii, V. S.

“…It has been shown that Ag and Au nanoparticles and thin layers influence charge carrier generation in InGaN/GaN multiple quantum well structures and…”
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Parameters of ZnO films with p-type conductivity deposited by high-frequency magnetron sputtering by Mezdrogina, M. M., Vinogradov, A. Ya, Levitskii, V. S., Terukova, E. E., Kozhanova, Yu. V., Aglikov, A. S.

“…It is demonstrated that a reduction in the defect concentration in ZnO films formed by high-frequency magnetron sputtering allows effective doping with…”
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Photoinduced defects in a-Si:H Films and InGaN/GaN multiple quantum well structures doped with Eu, Sm, and Eu + Sm by Mezdrogina, M. M., Terukov, E. I., Trapeznikova, I. N., Kozhanova, Yu. V.

“…Photoinduced defects in a -Si:H films arise due to an increase in the density of midgap states when weak strained silicon–hydrogen (Si–H) bonds transform to…”
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Metastable states in InGaN/GaN MQW structures doped with Sm, Eu, and Eu + Sm by Mezdrogina, M. M., Kozhanova, Yu. V.

“…Measurements of the microphotoluminescence (microPL) spectra of InGaN/GaN:Sm and InGaN/GaN:Eu quantum well (QW) structures show that the action of a magnetic…”
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Influence of the magnetic field strength and excitation intensity on the shape of microphotoluminescence spectra of quantum-well structures based on GaN/InGaN doped with Sm and Eu + Sm by Mezdrogina, M. M., Moskalenko, E. S., Poletaev, N. K., Kozhanova, Yu. V.

“…This paper presents the results of complex measurements of the microphotoluminescence spectra of quantum-well structures based on InGaN/GaN〈Sm〉 and the…”
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Influence of the magnetic field and measurement temperature on the shape of microphotoluminescence spectra of Eu-Doped InGaN/GaN quantum-well structures by Mezdrogina, M. M., Moskalenko, E. S., Kozhanova, Yu. V.

“…Based on the results of complex investigations of the influence of the magnetic field strength and measurement temperature on the shape of…”
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Intensity of emission from intracenter 4f-transitions in a-Si:H, ZnO, and GaN films doped with rare-earth ions by Mezdrogina, M. M., Eremenko, M. V., Terukov, E. I., Kozhanova, Yu. V.

“…It is shown that the intensity of emission from intracenter 4 f -transitions in amorphous a -Si:H films and crystalline (GaN, ZnO) films doped with rare-earth…”
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Growth and Structural, Magnetic, and Magnetooptical Properties of ZnO Films Doped with a Fe{sup 57} 3d Impurity by Mezdrogina, M. M., Aglikov, A. S., Semenov, V. G., Kozhanova, Yu. V., Nefedov, S. G., Shelukhin, L. A., Pavlov, V. V.

“…ZnO films obtained by high-frequency magnetron sputtering and doped with a Fe{sup 57} metallic 3d impurity by the diffusion method are studied. The type of…”
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Growth and Structural, Magnetic, and Magnetooptical Properties of ZnO Films Doped with a Fe57 3d Impurity by Mezdrogina, M. M., Aglikov, A. S., Semenov, V. G., Kozhanova, Yu. V., Nefedov, S. G., Shelukhin, L. A., Pavlov, V. V.

“…ZnO films obtained by high-frequency magnetron sputtering and doped with a Fe 57 metallic 3 d impurity by the diffusion method are studied. The type of local…”
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Spatial distribution of defects and the kinetics of nonequilibrium charge carriers in GaN wurtzite crystals doped with Sm, Eu, Er, Tm, and supplementary Zn impurities by Mezdrogina, M. M., Krivolapchuk, V. V., Kozhanova, Yu. V.

“…By analyzing time-resolved and steady-state photoluminescence spectra, it is established that the spatial distribution of rare-earth ion dopants in wurtzite…”
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Sensitization of luminescence of wurtzite GaN crystals doped with Eu and the additionally introduced Zn impurity by Krivolapchyuk, V. V., Mezdrogina, M. M., Kozhanova, Yu. V., Rodin, S. N.

“…A possibility to increase the intensity of intracenter transitions of the Eu ion in GaN crystals is investigated via introduction of the additional impurity to…”
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Two-electron tin centers formed in lead chalcogenides as a result of nuclear transmutations by Nemov, S. A., Seregin, P. P., Kozhanova, Yu. V., Seregin, N. P.

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Observation of Bose condensation in (Pb0.4Sn0.6)0.86In0.14Te semiconductor solid solutions using Mössbauer spectroscopy by Nemov, S. A., Seregin, P. P., Kozhanova, Yu. V., Volkov, V. P., Seregin, N. P., Irkaev, S. M., Shamshur, D. V.

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Impurity centers of rare-earth ions (Eu, Sm, Er) in GaN wurtzite crystals by Krivolapchuk, V. V., Kozhanova, Yu. V., Lundin, V. V., Mezdrogina, M. M., Rodin, S. N., Yusupova, Sh. A.

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A Mössbauer study of Fe impurity atoms in gallium arsenide by Seregin, P. P., Stepanova, T. R., Kozhanova, Yu. V., Volkov, V. P.

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Variation of electronic density in the superconducting phase transition in Nb3Al by Nemov, S. A., Seregin, P. P., Kozhanova, Yu. V., Troitskaya, N. N., Volkov, V. P., Seregin, N. P., Shamrai, V. F.

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