Search Results - "Kowalski, J.E."

A Low-Temperature Microwave Anneal Process for Boron-Doped Ultrathin Ge Epilayer on Si Substrate by Yao-Jen Lee, Fu-Kuo Hsueh, Shih-Chiang Huang, Kowalski, J.M., Kowalski, J.E., Cheng, A., Ann Koo, Guang-Li Luo, Ching-Yi Wu

“…High source/drain concentration level, ultrashallow junction, and high-mobility channel are important for the requirements of nanoscale transistors. Microwave…”
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Achieving junction stability in heavily doped epitaxial Si:P by Tsai, C.H., Hsu, Y.H., Santos, I., Pelaz, L., Kowalski, J.E., Liou, J.W., Woon, W.Y., Lee, C.K.

“…Junction stability and donor deactivation in silicon at high doping limit has been a long-standing issue in advanced semiconductor devices. Recently, heavily…”
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Discharge from a smooth stratified two-phase region through two horizontal side branches located in the same vertical plane by Hassan, I.G., Soliman, H.M., Sims, G.E., Kowalski, J.E.

“…Experimental data are presented for the mass flow rate and quality of two-phase (air-water) discharge from a stratified region through two side branches (6.35…”
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Experimental investigation of the two-phase discharge from a stratified region through two side branches oriented horizontally by HASSAN, I. G, SOLIMAN, H. M, SIMS, G. E, KOWALSKI, J. E

“…Experimental data are presented for the mass flow rate and quality of two-phase (air-water) discharge from a stratified region through two side branches (6.35…”
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Experimental investigation of the two-phase flow distribution in the outlets of a horizontal multi-branch header by Teclemariam, Z., Soliman, H.M., Sims, G.E., Kowalski, J.E.

“…An experimental investigation was conducted to study the two-phase flow distribution in a horizontal header with two inlet turrets and 30 (six banks of five)…”
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Single and multiple discharge from a stratified two-phase region through small branches by Hassan, I.G, Soliman, H.M, Sims, G.E, Kowalski, J.E

“…Experimental data are presented for the mass flow rate and quality during single, dual and triple discharge from a stratified air–water region through small…”
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Microwave Annealing for Low Temperature Activation of As in Si by Kowalski, J.M., Kowalski, J.E., Lojek, B.

“…Microwave processing of semiconductors offers distinct advantages over conventional RTP systems in some applications. The energy contained in the microwave…”
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3D 65nm CMOS with 320°C microwave dopant activation by Yao-Jen Lee, Yu-Lun Lu, Fu-Kuo Hsueh, Kuo-Chin Huang, Chia-Chen Wan, Tz-Yen Cheng, Ming-Hung Han, Kowalski, J.M., Kowalski, J.E., Dawei Heh, Hsi-Ta Chuang, Yiming Li, Tien-Sheng Chao, Ching-Yi Wu, Fu-Liang Yang

“…For the first time, CMOS TFTs of 65 nm channel length have been demonstrated by using a novel microwave dopant activation technique. A low temperature…”
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Digital filter ASIC for NASA deep space radio science receiver by Kowalski, J.E., Berner, J.B.

“…Implementation of an 80 MHz, 16-bit, multi-stage digital filter to decimate by 1600, providing a 50 kHz output with bandpass ripple of less than +/-0.1 dB is…”
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Implementation of a deep space receiver on 350 K gate GaAs gate arrays by Burke, G.R., Chow, T.W., Graham, J.S., Kowalski, J.E., Whitaker, W.D., Johnson, R.A.

“…A set of three GaAs ASICs has been designed. Together they form part of the Block V Digital Receiver. Each ASIC contains approximately 150 K-170 K used gates…”
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Implementation and performance of GaAs digital signal processing ASICs by Whitaker, W.D., Buchanan, J.R., Burke, G.R., Chow, T.W., Graham, J.S., Kowalski, J.E., Lam, B., Siavoshi, F., Thompson, M.S., Johnson, R.A.

“…The feasibility of performing high speed digital signal processing in GaAs gate array technology has been demonstrated with the successful implementation of a…”
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