Search Results - "Kowalski, B J"

The digitally replicated denture technique: A case report by Clark, Wendy A., Duqum, Ibrahim, Kowalski, B. J.

“…Objective Conventional complete denture protocols require several patient appointments with multiple laboratory procedures. There are multiple workflows…”
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Direct observation and temperature control of the surface Dirac gap in a topological crystalline insulator by Wojek, B. M., Berntsen, M. H., Jonsson, V., Szczerbakow, A., Dziawa, P., Kowalski, B. J., Story, T., Tjernberg, O.

“…Since the advent of topological insulators hosting Dirac surface states, efforts have been made to gap these states in a controllable way. A new route to…”
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Band inversion and the topological phase transition in (Pb,Sn)Se by Wojek, B. M., Dziawa, P., Kowalski, B. J., Szczerbakow, A., Black-Schaffer, A. M., Berntsen, M. H., Balasubramanian, T., Story, T., Tjernberg, O.

“…The recent discovery of a topological phase transition in IV-VI narrow-gap semiconductors has revitalized the decades-old interest in the bulk band inversion…”
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Observation of surface states on heavily indium-doped SnTe(111), a superconducting topological crystalline insulator by Polley, C. M., Jovic, V., Su, T. Y., Saghir, M., Newby, D., Kowalski, B. J., Jakiela, R., Barcz, A., Guziewicz, M., Thiagarajan, Balasubramanian, Balakrishnan, G., Laverock, J., Smith, K. E.

“…The topological crystalline insulator tin telluride is known to host superconductivity when doped with indium (Sn1-xInxTe), and for low indium content (x=0.04)…”
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Gd and Sm on clean semiconductor surfaces—Resonant photoemission studies by Guziewicz, E., Orlowski, B.A., Kowalski, B.J., Kowalik, I.A., Reszka, A., Wachnicki, L., Gieraltowska, S., Godlewski, M., Johnson, R.L.

“…•A series of RE/semiconductor surfaces was investigated by resonant photoemission.•It was found that EF position can control Gd5d occupancy and valence of Gd…”
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Magnetic interactions in Ge1−xEuxTe semiconductors: random distribution of magnetic Eu ions versus spinodal decompositions by Kilanski, L, Górska, M, Khaliq, A, Bartosik, F, Arciszewska, M, Podgórni, A, Minikayev, R, Brodowska, B, Reszka, A, Kowalski, B J, Slynko, V E, Slynko, E I

“…We present the studies of structural, magnetotransport, and magnetic properties of Ge1−xEuxTe bulk crystals with the chemical composition, x, changing from…”
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Topological crystalline insulator states in Pb1−xSnxSe by Dziawa, P., Kowalski, B. J., Dybko, K., Buczko, R., Szczerbakow, A., Szot, M., Łusakowska, E., Balasubramanian, T., Wojek, B. M., Berntsen, M. H., Tjernberg, O., Story, T.

“…Topological crystalline insulators are a novel state of matter in which the topological features of the electronic structure have been predicted to originate…”
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Pressure coefficients of the photoluminescence of the II–VI semiconducting quantum dots grown by molecular beam epitaxy by łach, P., Karczewski, G., Wojnar, P., Wojtowicz, T., Brik, M.G., Kamińska, A., Reszka, A., Kowalski, B.J., Suchocki, A.

“…Luminescence properties of CdTe and CdSe quantum dots have been studied under high hydrostatic pressure. The luminescence pressure coefficients of the II–VI…”
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Study of Fe/Si multilayers by photoemission spectroscopy by Orlowski, B.A., Kowalski, B.J., Fronc, K., Zuberek, R., Mickevičius, S., Mirabella, F., Ghijsen, J.

“…The Fe/Si multilayers structure was grown by direct current magnetron sputtering technique and was studied by means of X-ray photoelectron spectroscopy. The…”
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Resonant photoemission study of Ti interaction with GaN surface by Kowalik, I.A., Kowalski, B.J., Kaczor, P., Orlowski, B.A., Lusakowska, E., Johnson, R.L., Houssiau, L., Brison, J., Grzegory, I., Porowski, S.

“…Ti/GaN interface formation on GaN(0 0 0 1)-(1 × 1) surface has been investigated by means of resonant photoelectron spectroscopy (for photon energies near to…”
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Surface and electronic structure of Ga0.92In0.08N thin film investigated by photoelectron spectroscopy by KOWALSKI, B. J, KOWALIK, I. A, POROWSKI, S, GRZEGORY, I, LESZCZYNSKI, M, IWANOWSKI, R. J, SADOWSKI, J, KANSKI, J, ORLOWSKI, B. A, GHIJSEN, J, MIRABELLA, F, LUSAKOWSKA, E, PERLIN, P

“…The surface and electronic structure of Ga0*92In0*08N layers grown by metal organic chemical vapor deposition (MOCVD) have been investigated by means of…”
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Substantiation of 25 kGy as a sterilization dose: a rational approach to establishing verification dose by Kowalski, J.B., Tallentire, A.

“…The international and European standards for the validation and routine control of sterilization using ionizing radiation require that the effectiveness of a…”
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Fano resonance photoemission study of Sm on Pb0.97Ge0.03Te crystal by Orlowski, B.A., Guziewicz, E., Reszka, A., Pietrzyk, M.A., Kowalski, B.J., Johnson, R.L.

“…The Fano resonance photoemission study of the Pb0.97Ge0.03Te crystal doped by sequential deposition of Sm atoms on the clean [111] surface was performed to…”
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Photoemission study of Mn/GaN by Kowalik, I.A., Kowalski, B.J., Orlowski, B.A., Lusakowska, E., Iwanowski, R.J., Mickevičius, S., Johnson, R.L., Grzegory, I., Porowski, S.

“…Mn/GaN interface formation on a GaN(0 0 0 1 )-(1 × 1) surface has been investigated by means of resonant photoelectron spectroscopy, as a function of Mn…”
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Differential reflectivity and photoemission study of ZnTe and CdTe (1 1 0) surface by Orlowski, B.A., Kowalik, I.A., Kowalski, B.J., Suffczynski, M., Mycielski, A., Colonna, S., Ottaviani, C., Ronci, F., Cricenti, A.

“…The surface differential reflectivity (SDR) and photoemission methods were used to study surface electronic structure of CdTe and ZnTe (110) surface. The…”
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Mn doped ZnTe(1 1 0)-(1 × 1) surface in resonant photoemission study by Orlowski, B.A., Mickevičius, S., Kowalski, B.J., Kowalik, I.A., Kopalko, K., Mycielski, A., Johnson, R.L.

“…The electronic structure of monocrystalline ZnTe was investigated for a clean, relaxed (110)-(1 × 1) surface and for the same surface after sequential…”
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XPS study of CdTe(110) surface oxidation process by Kowalski, B.J, Orłowski, B.A, Ghijsen, J

“…A CdTe(110) surface, prepared in situ by argon ion bombardment and annealing, was oxidised at a pressure of 1×10 −5–5×10 −5 Torr of molecular oxygen excited by…”
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Interaction between Sm and GaN––a photoemission study by Guziewicz, E., Kowalski, B.J., Orlowski, B.A., Szczepanska, A., Golacki, Z., Kowalik, I.A., Grzegory, I., Porowski, S., Johnson, R.L.

“…We report on a comprehensive study of the Sm/GaN(0 0 0 1 ) interface using synchrotron radiation photoemission. Spectra were taken after stepwise Sm deposition…”
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Photoemission study of amorphous and crystalline GeTe and (Ge,Mn)Te semiconductors by Knoff, W., Pietrzyk, M.A., Reszka, A., Kowalski, B.J., Taliashvili, B., Story, T., Johnson, R.L., Orłowski, B.A.

“…Resonant photoemission spectroscopy was applied to compare the valence band structure of Ge0.9Mn0.1Te and GeTe semiconductor layers deposited on BaF2 substrate…”
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Oxide formation on the CdTe(111)A (1×1) surface by Kowalski, B.J., Orłowski, B.A., Ghijsen, J.

“…A CdTe(111)A (1×1) surface, prepared in situ by argon ion bombardment and annealing (at 250°C), was oxidized at the pressure of 1×10 −5–5×10 −5 Torr of…”
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