Search Results - "Kovsh, A. R."

High speed nanophotonic devices based on quantum dots by Bimberg, D., Fiol, G., Kuntz, M., Meuer, C., Lämmlin, M., Ledentsov, N. N., Kovsh, A. R.

“…For InAs‐GaAs based quantum dot lasers emitting at 1300 nm digital modulation with bit error rates below 10–11 at –2 dBm receiver power is demonstrated. Error…”
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Modelocked quantum dot vertical external cavity surface emitting laser by Hoffmann, M., Barbarin, Y., Maas, D. J. H. C., Golling, M., Krestnikov, I. L., Mikhrin, S. S., Kovsh, A. R., Südmeyer, T., Keller, U.

“…We report the first successful modelocking of a vertical external cavity surface emitting laser (VECSEL) with a quantum dot (QD) gain region. The VECSEL has a…”
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Quantum dot lasers: breakthrough in optoelectronics by Bimberg, D., Grundmann, M., Heinrichsdorff, F., Ledentsov, N.N., Ustinov, V.M., Zhukov, A.E., Kovsh, A.R., Maximov, M.V., Shernyakov, Y.M., Volovik, B.V., Tsatsul’nikov, A.F., Kop’ev, P.S., Alferov, Zh.I.

“…Semiconductor heterostructures with self-organized quantum dots (QDs) have experimentally exhibited properties expected for zero-dimensional systems. When used…”
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Complete suppression of filamentation and superior beam quality in quantum-dot lasers by Ribbat, Ch, Sellin, R. L., Kaiander, I., Hopfer, F., Ledentsov, N. N., Bimberg, D., Kovsh, A. R., Ustinov, V. M., Zhukov, A. E., Maximov, M. V.

“…Comparative near-field and beam-quality (M2) measurements on narrow stripe quantum-dot (QD) and quantum-well (QW) lasers of identical structure, both emitting…”
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Hole and electron emission from InAs quantum dots by Kapteyn, C. M. A., Lion, M., Heitz, R., Bimberg, D., Brunkov, P. N., Volovik, B. V., Konnikov, S. G., Kovsh, A. R., Ustinov, V. M.

“…Carrier escape processes from self-organized InAs quantum dots QDs embedded in GaAs are investigated by time-resolved capacitance spectroscopy. Electron…”
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Gain and threshold characteristics of long wavelength lasers based on InAs/GaAs quantum dots formed by activated alloy phase separation by Maximov, M.V., Asryan, L.V., Shernyakov, Yu.M., Tsatsul'nikov, A.F., Kaiander, I.N., Nikolaev, V.V., Kovsh, A.R., Mikhrin, S.S., Ustinov, V.M., Zhukov, A.E., Alferov, Z.I., Ledenstou, N.N., Bimberg, D.

“…Experimental and theoretical study was made of injection lasers based on InAs/GaAs quantum dots (QDs) formed by the activated alloy phase separation and…”
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Long-wavelength lasing from multiply stacked InAs/InGaAs quantum dots on GaAs substrates by Zhukov, A. E., Kovsh, A. R., Maleev, N. A., Mikhrin, S. S., Ustinov, V. M., Tsatsul’nikov, A. F., Maximov, M. V., Volovik, B. V., Bedarev, D. A., Shernyakov, Yu. M., Kop’ev, P. S., Alferov, Zh. I., Ledentsov, N. N., Bimberg, D.

“…An InAs quantum dot (QD) array covered by a thin InGaAs layer was used as the active region of diode lasers grown by molecular beam epitaxy on GaAs substrates…”
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Continuous-wave operation of long-wavelength quantum-dot diode laser on a GaAs substrate by Zhukov, A.E., Kovsh, A.R., Ustinov, V.M., Shernyakov, Yu.M., Mikhrin, S.S., Maleev, N.A., Kondrat'eva, E.Yu, Livshits, D.A., Maximov, M.V., Volovik, B.V., Bedarev, D.A., Musikhin, Yu.G., Ledentsov, N.N., Kop'ev, P.S., Alferov, Z.I., Bimberg, D.

“…Continuous-wave operation near 1.3 μm or a diode laser based on self-organized quantum dots (QD's) on a GaAs substrate is demonstrated. Multiple stacking of…”
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Electronic structure of self-assembled InAs quantum dots in GaAs matrix by Brounkov, P. N., Polimeni, A., Stoddart, S. T., Henini, M., Eaves, L., Main, P. C., Kovsh, A. R., Musikhin, Yu. G., Konnikov, S. G.

“…Capacitance–voltage characteristics have been measured at various frequencies and temperatures for structures containing a sheet of self-assembled InAs quantum…”
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Molecular beam epitaxy growth of GaAsN layers with high luminescence efficiency by Kovsh, A. R., Wang, J. S., Wei, L., Shiao, R. S., Chi, J. Y., Volovik, B. V., Tsatsul’nikov, A. F., Ustinov, V. M.

“…(In)GaAsN bulk layers and quantum wells usually demonstrate lower photoluminescence intensity than the nitrogen-free compositions. In the present work we have…”
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The role of Auger recombination in the temperature-dependent output characteristics (T=∞) of p-doped 1.3 μm quantum dot lasers by Fathpour, S., Mi, Z., Bhattacharya, P., Kovsh, A. R., Mikhrin, S. S., Krestnikov, I. L., Kozhukhov, A. V., Ledentsov, N. N.

“…Temperature invariant output slope efficiency and threshold current (T0=∞) in the temperature range of 5–75 °C have been measured for 1.3 μm p-doped…”
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High bit rate and elevated temperature data transmission using InGaAs quantum-dot lasers by Tan, K.T., Marinelli, C., Thompson, M.G., Wonfor, A., Silver, M., Sellin, R.L., Penty, R.V., White, I.H., Kuntz, M., Lammlin, M., Ledentsov, N.N., Bimberg, D., Zhukov, A.E., Ustinov, V.M., Kovsh, A.R.

“…A 5-Gb/s data modulation and transmission is investigated using Fabry-Pe/spl acute/rot InGaAs quantum-dot lasers emitting at approximately 1.3 μm. Error-free…”
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Emission of electrons from the ground and first excited states of self-organized InAs/GaAs quantum dot structures by Brunkov, P. N., Kovsh, A. R., Ustinov, V. M., Musikhin, Yu. G., Ledentsov, N. N., Konnikov, S. G., Polimeni, A., Patanè, A., Main, P. C., Eaves, L., Kapteyn, C. M. A.

“…Capacitance- and conductance-voltage studies have been carried out on Schottky barrier structures containing a sheet of self-organized InAs quantum dots. The…”
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High-power picosecond and femtosecond pulse generation from a two-section mode-locked quantum-dot laser by Rafailov, E. U., Cataluna, M. A., Sibbett, W., Il’inskaya, N. D., Zadiranov, Yu. M., Zhukov, A. E., Ustinov, V. M., Livshits, D. A., Kovsh, A. R., Ledentsov, N. N.

“…We demonstrate mode locking in a two-section quantum-dot laser that produces output powers up to 45 mW at 1260 nm. The pulse duration could be varied from 2 ps…”
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MBE-grown metamorphic lasers for applications at telecom wavelengths by Ledentsov, N.N., Shchukin, V.A., Kettler, T., Posilovic, K., Bimberg, D., Karachinsky, L.Ya, Gladyshev, A.Yu, Maximov, M.V., Novikov, I.I., Shernyakov, Yu.M., Zhukov, A.E., Ustinov, V.M., Kovsh, A.R.

“…We have studied growth phenomena and structural and optical properties of metamorphic (MM) quantum dots (QDs) and QD lasers emitting in the 1.4–1.5 μm range…”
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35 GHz mode-locking of 1.3μm quantum dot lasers by Kuntz, M., Fiol, G., Lämmlin, M., Bimberg, D., Thompson, M. G., Tan, K. T., Marinelli, C., Penty, R. V., White, I. H., Ustinov, V. M., Zhukov, A. E., Shernyakov, Yu. M., Kovsh, A. R.

“…35 GHz passive mode-locking of 1.3μm (InGa)As∕GaAs quantum dot lasers is reported. Hybrid mode-locking was achieved at frequencies up to 20GHz. The minimum…”
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Subpicosecond high-power mode locking using flared waveguide monolithic quantum-dot lasers by Thompson, M. G., Rae, A., Sellin, R. L., Marinelli, C., Penty, R. V., White, I. H., Kovsh, A. R., Mikhrin, S. S., Livshits, D. A., Krestnikov, I. L.

“…Ultrashort pulse, high-power mode locking is demonstrated in InGaAs quantum dot lasers using a flared waveguide laser incorporating a narrow waveguide sections…”
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InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm by Ustinov, V. M., Maleev, N. A., Zhukov, A. E., Kovsh, A. R., Egorov, A. Yu, Lunev, A. V., Volovik, B. V., Krestnikov, I. L., Musikhin, Yu. G., Bert, N. A., Kop’ev, P. S., Alferov, Zh. I., Ledentsov, N. N., Bimberg, D.

“…InAs self-organized quantum dots inserted in InGaAs quantum well have been grown on GaAs substrates by molecular beam epitaxy. The lateral size of the InAs…”
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InGaAs-GaAs Quantum-Dot Mode-Locked Laser Diodes: Optimization of the Laser Geometry for Subpicosecond Pulse Generation by Rae, A.R., Thompson, M.G., Kovsh, A.R., Penty, R.V., White, I.H.

“…The effect of cavity geometry on both pulsewidth and pulse output power is systematically investigated for a monolithic mode-locked quantum-dot laser diode…”
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Direct modulation and mode locking of 1.3 μm quantum dot lasers by Kuntz, M, Fiol, G, Lämmlin, M, Bimberg, D, Thompson, M G, Tan, K T, Marinelli, C, Wonfor, A, Sellin, R, Penty, R V, White, I H, Ustinov, V M, Zhukov, A E, Shernyakov, Yu M, Kovsh, A R, Ledentsov, N N, Schubert, C, Marembert, V

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