Search Results - "Kovalevsky, K. A."

Frequency Tuning of Terahertz Stimulated Emission under the Intracenter Optical Excitation of Uniaxially Stressed Si:Bi by Zhukavin, R. Kh, Kovalevsky, K. A., Pavlov, S. G., Deßmann, N., Pohl, A., Tsyplenkov, V. V., Abrosimov, N. V., Riemann, H., Hübers, H.-W., Shastin, V. N.

“…The results of experimental and theoretical investigations of terahertz-emission-spectrum tuning by means of uniaxial stress of a silicon crystal doped with…”
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Relaxation of the Excited States of Arsenic in Strained Germanium by Kovalevsky, K. A., Choporova, Yu. Yu, Zhukavin, R. Kh, Abrosimov, N. V., Pavlov, S. G., Hübers, H.-W., Tsyplenkov, V. V., Kukotenko, V. D., Knyazev, B. A., Shastin, V. N.

“…The relaxation times of the lower p states of the arsenic donor in a germanium crystal strained along the [111] crystallographic direction are studied…”
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Double Magnesium Donors as a Potential Active Medium in the Terahertz Range by Zhukavin, R. Kh, Tsyplenkov, V. V., Kovalevsky, K. A., Astrov, Yu. A., Lodygin, A. N., Shuman, V. B., Portsel, L. M., Abrosimov, N. V., Shastin, V. N.

“…Experimental results on the observation of terahertz luminescence under optical excitation of silicon doped with neutral helium-like magnesium donors under…”
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Ramsey Fringes in Germanium Doped with Arsenic Donors by Zhukavin, R. Kh, Bushuikin, P. A., Kukotenko, V. D., Choporova, Yu. Yu, Deßmann, N., Kovalevsky, K. A., Tsyplenkov, V. V., Osintseva, N. D., Gerasimov, V. V., Shengurov, D. V., Knyazev, B. A., Abrosimov, N. V., Shastin, V. N.

“…The results of observation of Ramsey oscillations in germanium doped with arsenic donors detected by photothermal ionization of Coulomb centers are presented…”
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Chemical Shift and Exchange Interaction Energy of the 1s States of Magnesium Donors in Silicon. The Possibility of Stimulated Emission by Shastin, V. N., Zhukavin, R. Kh, Kovalevsky, K. A., Tsyplenkov, V. V., Rumyantsev, V. V., Shengurov, D. V., Pavlov, S. G., Shuman, V. B., Portsel, L. M., Lodygin, A. N., Astrov, Yu. A., Abrosimov, N. V., Klopf, J. M., Hübers, H.-W.

“…The results of experiments aimed at the observation of split 1 s states in Mg-doped Si are reported. From the results, it is possible to determine the chemical…”
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Polarization of the induced THz emission of donors in silicon by Kovalevsky, K. A., Zhukavin, R. Kh, Tsyplenkov, V. V., Pavlov, S. G., Hübers, H. -W., Abrosimov, N. V., Shastin, V. N.

“…The polarization of the terahertz (4.9–6.4 THz) stimulated emission of Group-V (Sb, P, As, Bi) donors in single-crystal silicon under pumping (photoionization)…”
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Terahertz absorption and emission upon the photoionization of acceptors in uniaxially stressed silicon by Zhukavin, R. Kh, Kovalevsky, K. A., Orlov, M. L., Tsyplenkov, V. V., Hübers, H.-W., Dessmann, N., Kozlov, D. V., Shastin, V. N.

“…Experimental data on the spontaneous emission and absorption modulation in boron-doped silicon under CO 2 laser excitation depending on the uniaxial stress…”
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Relaxation of excited donor states in silicon with emission of intervalley phonons by Tsyplenkov, V. V., Demidov, E. V., Kovalevsky, K. A., Shastin, V. N.

“…The process of low-temperature relaxation of excited states of Group V donors in silicon due to coupling of electrons bound at Coulomb centers with intervalley…”
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Single-color pump-probe setup at the NovoFEL facility for measurements of carrier relaxation dynamics in semiconductors by Kukotenko, V.D., Choporova, Y.Y., Knyazev, Boris A., Gerasimov, V.V., Zhukavin, R.K., Kovalevsky, K.A.

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Relaxation of Coulomb States in Semiconductors Probed by FEL Radiation by Zhukavin, R.Kh, Kovalevsky, K.A., Tsyplenkov, V.V., Pavlov, S.G., Hübers, H-W., Choporova, Yu.Yu, Knyazev, B.A., Klopf, J.M., Redlich, B., Abrosimov, N.V., Astrov, Yu.A., Shastin, V.N.

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Optimizing the Operation of Terahertz Silicon Lasers by Pavlov, S.G., Hubers, H.-W., Bottger, U., Zhukavin, R.Kh, Tsyplenkov, V.V., Kovalevsky, K.A., Shastin, V.N.

“…In this paper, a thorough characterization of terahertz silicon lasers with respect to doping concentration and operation temperature has been carried out…”
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Detection of Ramsey Oscillations in Germanium Doped with Shallow Donors upon the Excitation of the 1s → 2p0 Transition by Zhukavin, R. Kh, Bushuikin, P. A., Kukotenko, V. V., Choporova, Yu. Yu, Deßmann, N., Kovalevsky, K. A., Tsyplenkov, V. V., Gerasimov, V. V., Knyazev, B. A., Abrosimov, N. V., Shastin, V. N.

“…Ramsey oscillations have been observed in germanium doped with shallow impurities exposed to terahertz pulses from the NovoFEL facility involving free-electron…”
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Spin-orbit coupling effect on bismuth donor lasing in stressed silicon by Zhukavin, R. Kh, Kovalevsky, K. A., Tsyplenkov, V. V., Shastin, V. N., Pavlov, S. G., Hübers, H.-W., Riemann, H., Abrosimov, N. V., Ramdas, A. K.

“…We report a study on terahertz lasing from optically excited Bi donors in axially compressed silicon crystal. The laser frequency and the radiated power were…”
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The ability of CW operation of THz lasing from group-V donors in silicon by Shastin, V N, Zhukavin, Roman Kh, Kovalevsky, K A, Tsyplenkov, V V, Pavlov, S G, Hubers, H.-W

“…Terahertz stimulated emission (4-6 THz) from optically excited group-V donors (phosphor P, antimony Sb, arsenic As, bismuth Bi) in axially compressed silicon…”
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Gain and efficiency of THz donor lasing in axially stressed silicon crystal by Shastin, V N, Zhukavin, Roman Kh, Kovalevsky, K A, Tsyplenkov, V V, Pavlov, S G, Hubers, H.-W

“…Liquid helium temperature experimental study of terahertz (4-6 THz) lasing of optically excited group-V donors in axially compressed silicon crystal are…”
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Effect of uniaxial stress on intervalley phonon-assisted relaxation of excited shallow-donor states in silicon by Tsyplenkov, V. V., Kovalevsky, K. A., Shastin, V. N.

“…Results of calculations of the rate of intervalley scattering for excited states 2 p ± , 2 p 0 , and 1 s of the Group V donors (phosphorus, antimony, and…”
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Stress dependent frequency shift in Si:Bi and Si:Sb THz lasers by Zhukavin, Roman Kh, Kovalevsky, K A, Tsyplenkov, V V, Shastin, V N, Pavlov, S G, Böttger, U, Nötzel, N, Riemann, H, Abrosimov, N V, Hubers, H.-W

“…It has been demonstrated that external uniaxial stress applied to silicon crystals doped by bismuth and antimony influences on the emission spectrum of…”
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Low-threshold terahertz Si:As laser by Pavlov, S. G., Böttger, U., Hübers, H.-W., Zhukavin, R. Kh, Kovalevsky, K. A., Tsyplenkov, V. V., Shastin, V. N., Abrosimov, N. V., Riemann, H.

“…The optical threshold of terahertz intracenter arsenic-doped silicon lasers has been reduced by two orders of magnitude by applying a compressive force to the…”
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Influence of uniaxial stress on stimulated terahertz emission from phosphor and antimony donors in silicon by Zhukavin, R. Kh, Tsyplenkov, V. V., Kovalevsky, K. A., Shastin, V. N., Pavlov, S. G., Böttger, U., Hübers, H.-W., Riemann, H., Abrosimov, N. V., Nötzel, N.

“…The effect of uniaxial stress on terahertz stimulated emission from phosphor and antimony donors in silicon excited by C O 2 laser radiation was studied. The…”
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Terahertz-range spontaneous emission under the optical excitation of donors in uniaxially stressed bulk silicon and SiGe/Si heterostructures by Zhukavin, R. Kh, Kovalevsky, K. A., Orlov, M. L., Tsyplenkov, V. V., Bekin, N. A., Yablonskiy, A. N., Yunin, P. A., Pavlov, S. G., Abrosimov, N. V., Hübers, H. -W., Radamson, H. H., Shastin, V. N.

“…The results of measurements of the total terahertz-range photoluminescence of Group-V donors (phosphorus, antimony, bismuth, arsenic) in bulk silicon and…”
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