Search Results - "Kovalenkov, O. V."

Nanoindentation and near-field spectroscopy of single semiconductor quantum dots by Mintairov, A. M., Sun, K., Merz, J. L., Li, C., Vlasov, A. S., Vinokurov, D. A., Kovalenkov, O. V., Tokranov, V., Oktyabrsky, S.

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Photoreflectance evaluation of MOVPE AlGaAs/GaAs multiple quantum wells on (111)A GaAs by Cho, Soohaeng, Sanz-Hervás, A., Kovalenkov, O.V., Majerfeld, A., Villar, C., Kim, B.W.

“…The Photoreflectance (PR) technique was applied to evaluate a 25-period Al 0.27Ga 0.73As/GaAs multiquantum-well (MQW) structure with a well length of 55 Å…”
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Photoemission of spinpolarized electrons from strained GaAsP by DRESCHER, P, ANDRESEN, H. G, HARTMANN, P, HOFFMANN, J, JENNEWEIN, P, KAISER, K. H, KÖBIS, S, KOVALENKOV, O. V, KREIDEL, H. J, LANGBEIN, J, MAMAEV, Y. A, NACHTIGALL, C, AULENBACHER, K, PETRI, M, PLÜTZER, S, REICHERT, E, SCHEMIES, M, SCHÖPE, H.-J, STEFFENS, K.-H, STEIGERWALD, M, SUBASHIEV, A. V, TRAUTNER, H, VINOKUROV, D. A, BERMUTH, J, YASHIN, Y. P, YAVICH, B. S, DOMBO, T, FISCHER, H, EUTENEUER, H, FALEEV, N. N, GALAKTIONOV, M. S, HARRACH, D. V

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Optical orientation of donor-bound excitons in nanosized InP/InGaP islands by Dzhioev, R. I., Zakharchenya, B. P., Korenev, V. L., Pak, P. E., Vinokurov, D. A., Kovalenkov, O. V., Tarasov, I. S.

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Self-organized nanosize InP and InAsP clusters obtained by metalorganic compound hydride epitaxy by Vinokurov, D. A., Kapitonov, V. A., Kovalenkov, O. V., Livshits, D. A., Tarasov, I. S.

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Self-organized nanoscale InP islands in an InGaP/GaAs host and InAs islands in an InGaAs/InP host by Vinokurov, D. A., Kapitonov, V. A., Kovalenkov, O. V., Livshits, D. A., Sokolova, Z. N., Tarasov, I. S., Alferov, Zh. I.

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n - In Ga N ∕ p - Ga N single heterostructure light emitting diodewith p -side down by Reed, M. L., Readinger, E. D., Shen, H., Wraback, M., Syrkin, A., Usikov, A., Kovalenkov, O. V., Dmitriev, V. A.

“…The effects of negative polarization charge at the n - In Ga N ∕ p - Ga N interface on the performance of hydride vapor phase-epitaxy deposited single…”
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n - In Ga N ∕ p - Ga N single heterostructure light emitting diode with p-side down by Reed, M. L., Readinger, E. D., Shen, H., Wraback, M., Syrkin, A., Usikov, A., Kovalenkov, O. V., Dmitriev, V. A.

“…The effects of negative polarization charge at the n-InGaN∕p-GaN interface on the performance of hydride vapor phase-epitaxy deposited single heterostructure…”
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Low-temperature photoluminescence of heavy-ion-implanted InGaP solid solutions by Bhattachar-yya, D., Vinokurov, D. A., Gusinskii, G. M., Elyukhin, V. A., Kovalenkov, O. V., Kyutt, R. N., Marsh, J. H., Naidenov, V. O., Portnoi, E. L.

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Structural and optical properties of very high quality GaAs/AlGaAs multiple quantum well structures grown on (111)A substrates by MOVPE by Sanz-Hervas, A., Soohaeng Cho, Kovalenkov, O.V., Dickey, S.A., Majerfeld, A., Villar, C., Lopez, M., Melliti, R., Wang, G., Tronc, P., Kim, B.W.

“…We report an investigation of the structural and optical properties of the first high quality GaAs/AlGaAs multi-quantum-well structures grown on (111)A…”
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Investigation of strained InxGa1−x As/InP quantum wells fabricated by metalorganic compound hydride epitaxy by Bondarev, A. D., Vinokurov, D. A., Kapitonov, V. A., Kovalenkov, O. V., Sokolova, Z. N., Tarasov, I. S.

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