Search Results - "Kovacic, S. J."

InP/InGaAsP double-heterostructure optoelectronic switch by Kovacic, S.J., Robinson, B.J., Simmons, J.G., Thompson, D.A.

“…The double-heterostructure optoelectronic switch (DOES), fabricated in the InP/InGaAsP material system, is demonstrated. The functional characteristics and…”
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Si/SiGe digital optoelectronic switch by Kovacic, S.J., Simmons, J.G., Song, K., Noel, J.-P., Houghton, D.C.

“…The physical parameters and functional characteristics of a Si/SiGe digital optoelectronic switch are reported. The device is found to have bistable electrical…”
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Self-heating in multi-emitter SiGe HBTs by McAlister, S.P., McKinnon, W.R., Kovacic, S.J., Lafontaine, H.

“…High power bipolar transistors often have multiple emitters, to achieve high currents, and efficient use of the whole emitter area. The emitters experience…”
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Degradation and recovery of SiGe HBTs following radiation and hot-carrier stressing by Sheng, S.R., McAlister, S.P., McCaffrey, J.P., Kovacic, S.J.

“…The effects of 1.25 MeV 60Co gamma (γ) irradiation on the dc electrical characteristics of self-aligned SiGe HBTs, and their post-stress reversibility have…”
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Optical and electrical oscillations in double-heterojunction negative differential resistance devices by Kovacic, S.J., Ojha, J.J., Simmons, J.G., Jessop, P.E., Mand, R.S., SpringThorpe, A.J.

“…The observation of optical and electrical oscillations is reported in a GaAs/AlGaAs digital optoelectronic switch (DOES) structure. The oscillations are…”
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Transimpedance amplifier-based full low-frequency noise characterization setup for Si/SiGe HBTs by Bary, L., Borgarino, M., Plana, R., Parra, T., Kovacic, S.J., Lafontaine, H., Graffeuil, J.

“…An experimental setup, based on current/voltage conversion through transimpedance amplifiers (TAs), has been implemented for the direct full low-frequency…”
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Thermal resistance in trench-isolated Si/SiGe heterojunction bipolar transistors by Reid, A.R., Kleckner, T.C., Jackson, M.K., Marchesan, D., Kovacic, S.J., Long, J.R.

“…We present a study of thermal resistance in trench-isolated Si/SiGe heterojunction bipolar transistors (HBTs), using a technique based on isothermal collector…”
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Molecular‐beam epitaxially grown InP/InGaAsP heterostructure for inversion‐channel devices by Kovacic, S. J., Robinson, B. J., Swoger, J. H., Simmons, J. G., Thompson, D. A.

“…A heterostructure, based on InP/InGaAsP alloys grown by gas source molecular‐beam epitaxy, is presented which can be used to implement the inversion‐channel…”
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A 5-GHz SiGe HBT return-to-zero comparator for RF A/D conversion by Weinan Gao, Snelgrove, W.M., Kovacic, S.J.

“…This paper presents a monolithic comparator implemented in a 0.5-/spl mu/m SiGe heterojunction bipolar transistor (HBT) process. The SiGe HBT process provides…”
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Temperature distribution and heating in multiple emitter SiGe HBTs by McAlister, S. P., McKinnon, W. R., Kovacic, S. J., Lafontaine, H.

“…High power bipolar transistors require the use of multiple emitters which, at high current densities, show significant self-heating and temperature increases…”
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Modeling and characteristics of bistable optoelectronic switches and heterojunction field effect transistors in molecular‐beam epitaxially grown SiGe/Si by Kovacic, S. J., Simmons, J. G., Ojha, J. J., Noel, J.‐P., Houghton, D. C.

“…Recent progress in experimentally realizing, characterizing, and modeling bistable digital optoelectronic switches (DOES) and heterojunction field effect…”
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Strain-induced birefringence in Si 1−x Ge x optical waveguides by Robillard, M., Jessop, P. E., Bruce, D. M., Janz, S., Williams, R. L., Mailhot, S., Lafontaine, H., Kovacic, S. J., Ojha, J. J.

“…For the design of Si 1−x Ge x optical waveguide devices, one of the most important material parameters is the refractive index difference, δn, between the…”
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RF analog and digital circuits in SiGe technology by Long, J.R., Copeland, M.A., Kovacic, S.J., Malhi, D.S., Harame, D.L.

“…The performance of a commercially viable SiGe-HBT technology is demonstrated in analog and digital communications applications. The measurements show that…”
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