Search Results - "Koukab, A."
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Analytical model for ultra-thin body junctionless symmetric double gate MOSFETs in subthreshold regime
Published in Solid-state electronics (01-04-2013)“…► Junctionless is one of the most promising alternative architecture for CMOS. ► Some works have been done via numerical simulations. ► An analytical model of…”
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2
Radiation response of 28 nm CMOS transistors at high proton and neutron fluences for high energy physics applications
Published in Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment (01-08-2024)“…The 28 nm CMOS technology was selected as a promising candidate to upgrade electronics of particle detectors at CERN. Despite the robustness of this node to…”
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3
The Timepix4 analog front-end design: Lessons learnt on fundamental limits to noise and time resolution in highly segmented hybrid pixel detectors
Published in Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment (01-01-2023)“…This manuscript describes the optimization of the front-end readout electronics for high granularity hybrid pixel detectors. The theoretical study aims at…”
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4
New architecture for the analog front-end of Medipix4
Published in Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment (21-10-2020)“…The Medipix4 chip is the latest member of the family of Medipix pixel detector readout chips aimed at high rate spectroscopic X-ray imaging. Unlike its…”
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5
Cost-effectiveness of wound care : a concept analysis
Published in Sultan Qaboos University medical journal (01-11-2018)“…This review aimed to analyse the concept of cost-effectiveness within the context of chronic wound care using Walker and Avant’s approach. The Cumulative Index…”
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6
On performance scaling and speed of junctionless transistors
Published in Solid-state electronics (01-01-2013)“…► We propose a prospective study of the junctionless transistors (JLTs) scaling performances. ► Analytical evaluation of the JLT intrinsic delay, after…”
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7
A dynamic operation of a PIN photodiode
Published in Applied physics letters (19-01-2015)“…Traditionally, photodiodes operate at static reverse bias, and incident light intensity is obtained from the relatively week photocurrent. In this paper, we…”
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8
A GSM-GPRS/UMTS FDD-TDD/WLAN 802.11a-b-g multi-standard carrier generation system
Published in IEEE journal of solid-state circuits (01-07-2006)“…A compact carrier generation system enabling proper interoperability among quad-band GSM, WCDMA (FDD and TDD), and WLAN (802.11a/b/g) standards is developed…”
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Journal Article Conference Proceeding -
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Modeling techniques and verification methodologies for substrate coupling effects in mixed-signal system-on-chip designs
Published in IEEE transactions on computer-aided design of integrated circuits and systems (01-06-2004)“…The substrate noise coupling problems in today's complex mixed-signal system-on-chip (MS-SOC) brings a new set of challenges for designers. In this paper, we…”
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10
Reactive Power Imbalances in LC VCOs and Their Influence on Phase-Noise Mechanisms
Published in IEEE transactions on microwave theory and techniques (01-12-2011)“…Phase-noise mechanisms in cross-coupled LC voltage-controlled oscillators (VCOs) are reviewed based on a physical understanding of reactive power imbalances in…”
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11
An improved high frequency C- V method for interface state analysis on MIS structures
Published in Solid-state electronics (01-04-1997)“…A technique to determine the surface band bending Ψ s and the density of interface traps D it, from modified bias-temperature-stress (BTS) and…”
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12
Design and optimization of a linear wide-band VCO for multimode applications
Published in 2005 IEEE Radio Frequency integrated Circuits (RFIC) Symposium - Digest of Papers (2005)“…An LC VCO designed in a 0.25 /spl mu/m BiCMOS-SiGe process achieves a tuning range of 2.8-3.75 GHz while drawing 1.3 mA from a 2.5 V supply. The proposed…”
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Conference Proceeding -
13
LC-VCO Design With Dual- , Boosted for RF Oscillation and Attenuated for LF Noise
Published in IEEE microwave and wireless components letters (01-12-2010)“…A VCO topology with a high at RF and low gm at low frequencies (LF) is presented. A high gm(RF) improves start-up conditions, and a low gm(LF) enables a…”
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Journal Article -
14
The Timepix4 analog front-end design: Lessons learnt on fundamental limits to noise and time resolution in highly segmented hybrid pixel detectors
Published in Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment (01-10-2022)“…This manuscript describes the optimization of the front-end readout electronics for high granularity hybrid pixel detectors. The theoretical study aims at…”
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Journal Article -
15
Simple method for accurate determination of the mean interface state density of MIS (metal/BN/InP) structures
Published in Microelectronic engineering (01-12-1999)“…A simple method for the determination of the mean interface density D itm of MIS structures is proposed. The method is based on modified bias–thermal stress…”
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Journal Article -
16
Procedure to minimize interface-state errors in MIS doping profile determinations
Published in Solid-state electronics (01-04-1997)“…It is shown that a more accurate doping profile without any interface trap effect can be obtained by using a technique based on a modified…”
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17
Preparation of boron nitride thin films by microwave plasma enhanced CVD, for semiconductor applications
Published in Materials science & engineering. B, Solid-state materials for advanced technology (01-04-1997)“…Thin films of boron nitride (BN) have been deposited on silicon and indium phosphide (InP) substrates at low temperature (≈ 300 °C) using a microwave plasma…”
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Journal Article -
18
A simple technique for hot-carrier-induced interface state analysis in thin oxide MOS capacitors
Published in Solid-state electronics (01-03-1999)“…A simple technique allowing the determination of the interface trap distribution induced by hot carrier injection in MOS capacitors is presented. It is based…”
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Journal Article -
19
Analysis and modeling of on-chip power combiners and their losses in LINC transmitters
Published in 2011 IEEE Custom Integrated Circuits Conference (CICC) (01-09-2011)“…This paper presents a compact model for LINC (linear amplification with non linear components) transmitters an their power combiners. The study focuses on the…”
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Conference Proceeding -
20
Improved bias–thermal-stress method for the insulator charge measurement of BN/InP MIS structures
Published in Microelectronics (01-08-2000)“…A modified bias–thermal-stress method for insulator charge characterisation is described. The procedure is applied to optimise the deposition parameters of a…”
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