Search Results - "Koukab, A."

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  1. 1

    Analytical model for ultra-thin body junctionless symmetric double gate MOSFETs in subthreshold regime by Jazaeri, F., Barbut, L., Koukab, A., Sallese, J.-M.

    Published in Solid-state electronics (01-04-2013)
    “…► Junctionless is one of the most promising alternative architecture for CMOS. ► Some works have been done via numerical simulations. ► An analytical model of…”
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    Journal Article
  2. 2

    Radiation response of 28 nm CMOS transistors at high proton and neutron fluences for high energy physics applications by Termo, G., Borghello, G., Faccio, F., Michelis, S., Koukab, A., Sallese, J.M.

    “…The 28 nm CMOS technology was selected as a promising candidate to upgrade electronics of particle detectors at CERN. Despite the robustness of this node to…”
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    Journal Article
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    New architecture for the analog front-end of Medipix4 by Sriskaran, V., Alozy, J., Ballabriga, R., Campbell, M., Egidos, N., Fernandez-Tenllado, J.M., Heijne, E., Kremastiotis, I., Koukab, A., Llopart, X., Sallese, J.M., Tlustos, L.

    “…The Medipix4 chip is the latest member of the family of Medipix pixel detector readout chips aimed at high rate spectroscopic X-ray imaging. Unlike its…”
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    Journal Article
  5. 5

    Cost-effectiveness of wound care : a concept analysis by al-Gharibi, Kawkab Abd Allah, Sharstha, Sajana, al-Faras, Maria A.

    Published in Sultan Qaboos University medical journal (01-11-2018)
    “…This review aimed to analyse the concept of cost-effectiveness within the context of chronic wound care using Walker and Avant’s approach. The Cumulative Index…”
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    Journal Article
  6. 6

    On performance scaling and speed of junctionless transistors by Koukab, A., Jazaeri, F., Sallese, J.-M.

    Published in Solid-state electronics (01-01-2013)
    “…► We propose a prospective study of the junctionless transistors (JLTs) scaling performances. ► Analytical evaluation of the JLT intrinsic delay, after…”
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    Journal Article
  7. 7

    A dynamic operation of a PIN photodiode by Okhonin, S., Gureev, M., Sallin, D., Appel, J., Koukab, A., Kvasov, A., Pastre, M., Polzik, E. S., Tagantsev, A. K., Uddegard, F., Kayal, M.

    Published in Applied physics letters (19-01-2015)
    “…Traditionally, photodiodes operate at static reverse bias, and incident light intensity is obtained from the relatively week photocurrent. In this paper, we…”
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    Journal Article
  8. 8

    A GSM-GPRS/UMTS FDD-TDD/WLAN 802.11a-b-g multi-standard carrier generation system by Koukab, A., Yu Lei, Declercq, M.J.

    Published in IEEE journal of solid-state circuits (01-07-2006)
    “…A compact carrier generation system enabling proper interoperability among quad-band GSM, WCDMA (FDD and TDD), and WLAN (802.11a/b/g) standards is developed…”
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    Journal Article Conference Proceeding
  9. 9

    Modeling techniques and verification methodologies for substrate coupling effects in mixed-signal system-on-chip designs by Koukab, A., Banerjee, K., Declercq, M.

    “…The substrate noise coupling problems in today's complex mixed-signal system-on-chip (MS-SOC) brings a new set of challenges for designers. In this paper, we…”
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    Journal Article
  10. 10

    Reactive Power Imbalances in LC VCOs and Their Influence on Phase-Noise Mechanisms by Koukab, A.

    “…Phase-noise mechanisms in cross-coupled LC voltage-controlled oscillators (VCOs) are reviewed based on a physical understanding of reactive power imbalances in…”
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    Journal Article
  11. 11

    An improved high frequency C- V method for interface state analysis on MIS structures by Koukab, A, Bath, A, Losson, E

    Published in Solid-state electronics (01-04-1997)
    “…A technique to determine the surface band bending Ψ s and the density of interface traps D it, from modified bias-temperature-stress (BTS) and…”
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    Journal Article
  12. 12

    Design and optimization of a linear wide-band VCO for multimode applications by Koukab, A., Lei, Y., Declercq, M.

    “…An LC VCO designed in a 0.25 /spl mu/m BiCMOS-SiGe process achieves a tuning range of 2.8-3.75 GHz while drawing 1.3 mA from a 2.5 V supply. The proposed…”
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    Conference Proceeding
  13. 13

    LC-VCO Design With Dual- , Boosted for RF Oscillation and Attenuated for LF Noise by Koukab, A

    “…A VCO topology with a high at RF and low gm at low frequencies (LF) is presented. A high gm(RF) improves start-up conditions, and a low gm(LF) enables a…”
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    Journal Article
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    Simple method for accurate determination of the mean interface state density of MIS (metal/BN/InP) structures by Koukab, A, Bath, A, Baehr, O

    Published in Microelectronic engineering (01-12-1999)
    “…A simple method for the determination of the mean interface density D itm of MIS structures is proposed. The method is based on modified bias–thermal stress…”
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    Journal Article
  16. 16

    Procedure to minimize interface-state errors in MIS doping profile determinations by Koukab, A, Bath, A

    Published in Solid-state electronics (01-04-1997)
    “…It is shown that a more accurate doping profile without any interface trap effect can be obtained by using a technique based on a modified…”
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    Journal Article
  17. 17

    Preparation of boron nitride thin films by microwave plasma enhanced CVD, for semiconductor applications by Baehr, O., Thévenin, P., Bath, A., Koukab, A., Losson, E., Lepley, B.

    “…Thin films of boron nitride (BN) have been deposited on silicon and indium phosphide (InP) substrates at low temperature (≈ 300 °C) using a microwave plasma…”
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    Journal Article
  18. 18

    A simple technique for hot-carrier-induced interface state analysis in thin oxide MOS capacitors by Koukab, A., Hoffmann, A., Bath, A., Charles, J.-P.

    Published in Solid-state electronics (01-03-1999)
    “…A simple technique allowing the determination of the interface trap distribution induced by hot carrier injection in MOS capacitors is presented. It is based…”
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    Journal Article
  19. 19

    Analysis and modeling of on-chip power combiners and their losses in LINC transmitters by Koukab, A., Amiri, O. T.

    “…This paper presents a compact model for LINC (linear amplification with non linear components) transmitters an their power combiners. The study focuses on the…”
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    Conference Proceeding
  20. 20

    Improved bias–thermal-stress method for the insulator charge measurement of BN/InP MIS structures by Koukab, A, Bath, A, Thévenin, P

    Published in Microelectronics (01-08-2000)
    “…A modified bias–thermal-stress method for insulator charge characterisation is described. The procedure is applied to optimise the deposition parameters of a…”
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    Journal Article