Search Results - "Kotzea, S."

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  1. 1

    First monolithic integration of GaN-based enhancement mode n-channel and p-channel heterostructure field effect transistors by Hahn, H., Reuters, B., Kotzea, S., Lukens, G., Geipel, S., Kalisch, H., Vescan, A.

    Published in 72nd Device Research Conference (01-06-2014)
    “…GaN-based devices have shown to be promising alternatives to Si-based devices in a wide range of applications. After covering several frequency bands in RF…”
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    Conference Proceeding
  2. 2

    Novel approach for a monolithically integrated GaN cascode with minimized conduction and switching losses by Hahn, H., Yacoub, H., Zweipfennig, T., Lukens, G., Kotzea, S., Debald, A., Oculak, A. N, Negra, R., Kalisch, H., Vescan, A.

    Published in 2018 76th Device Research Conference (DRC) (01-06-2018)
    “…In the power switching market, GaN-on-Si technology is competing at low to medium blocking voltages (200-900 V). The challenge to obtain a sufficiently high…”
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    Conference Proceeding
  3. 3

    Extraction of the active acceptor concentration in (pseudo-) vertical GaN MOSFETs using the body-bias effect by Hentschel, R., Wachowiak, A., Großer, A., Kotzea, S., Debald, A., Kalisch, H., Vescan, A., Jahn, A., Schmult, S., Mikolajick, T.

    Published in Microelectronics (01-09-2019)
    “…We report and discuss the performance of an enhancement mode n-channel pseudo-vertical GaN metal oxide semiconductor field effect transistor (MOSFET). The…”
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    Journal Article