Search Results - "Kotzea, S."
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First monolithic integration of GaN-based enhancement mode n-channel and p-channel heterostructure field effect transistors
Published in 72nd Device Research Conference (01-06-2014)“…GaN-based devices have shown to be promising alternatives to Si-based devices in a wide range of applications. After covering several frequency bands in RF…”
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Conference Proceeding -
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Novel approach for a monolithically integrated GaN cascode with minimized conduction and switching losses
Published in 2018 76th Device Research Conference (DRC) (01-06-2018)“…In the power switching market, GaN-on-Si technology is competing at low to medium blocking voltages (200-900 V). The challenge to obtain a sufficiently high…”
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Conference Proceeding -
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Extraction of the active acceptor concentration in (pseudo-) vertical GaN MOSFETs using the body-bias effect
Published in Microelectronics (01-09-2019)“…We report and discuss the performance of an enhancement mode n-channel pseudo-vertical GaN metal oxide semiconductor field effect transistor (MOSFET). The…”
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Journal Article