Search Results - "Koto, Makoto"

  • Showing 1 - 10 results of 10
Refine Results
  1. 1

    Thermodynamics and kinetics of the growth mechanism of vapor–liquid–solid grown nanowires by Koto, Makoto

    Published in Journal of crystal growth (15-08-2015)
    “…Nanowires are widely regarded as building blocks for next-generation devices because of their unique characteristics, particularly their morphology. The…”
    Get full text
    Journal Article
  2. 2

    Growth mechanisms of vapor–liquid–solid grown nanowires: A detailed analysis of irregular nanowire formation by Koto, Makoto

    Published in Journal of crystal growth (01-04-2014)
    “…Although vapor–liquid–solid (VLS) growth has become a standard method for producing nanowires, the underlying growth mechanisms have not been fully elucidated…”
    Get full text
    Journal Article
  3. 3

    Hexagonal Close-Packed Structure of Au Nanocatalysts Solidified after Ge Nanowire Vapor−Liquid−Solid Growth by Marshall, Ann F, Goldthorpe, Irene A, Adhikari, Hemant, Koto, Makoto, Wang, Young-Chung, Fu, Lianfeng, Olsson, Eva, McIntyre, Paul C

    Published in Nano letters (08-09-2010)
    “…We report that approximately 10% of the Au catalysts that crystallize at the tips of Ge nanowires following growth have the close-packed hexagonal crystal…”
    Get full text
    Journal Article
  4. 4

    Gold-Catalyzed Vapor-Liquid-Solid Germanium-Nanowire Nucleation on Porous Silicon by Koto, Makoto, Marshall, Ann F., Goldthorpe, Irene A., McIntyre, Paul C.

    “…Nanoporous Si(111) substrates are used to study the effects of Au catalyst coarsening on the nucleation of vapor–liquid–solid‐synthesized epitaxial Ge…”
    Get full text
    Journal Article
  5. 5

    Control of Crystal Orientation and Diameter of Silicon Nanowire Using Anodic Aluminum Oxide Template by Shimizu, Tomohiro, Inoue, Fumihiro, Wang, Chonge, Otsuka, Shintaro, Tada, Yoshihiro, Koto, Makoto, Shingubara, Shoso

    Published in Japanese Journal of Applied Physics (01-06-2013)
    “…The control of the crystal orientation and diameter of vertically grown epitaxial Si nanowires was demonstrated using a combination of a vapor--liquid--solid…”
    Get full text
    Journal Article
  6. 6

    In-situ X-ray photoelectron spectroscopy of reactive-ion-etched surfaces on indium-tin oxide film employing alcohol gas by SAKAUE, H, KOTO, M, HORIIKE, Y

    Published in Japanese Journal of Applied Physics (01-06-1992)
    “…Reactive ion etching (RIE) of the In-Sn oxide (ITO) film has been studied employing methyl alcohol (CH 3 OH). The ITO etch rate depends strongly on ion energy,…”
    Get full text
    Conference Proceeding Journal Article
  7. 7

    Diffusion suppression in vapor–liquid–solid Si nanowire growth by a barrier layer between the Au catalyst and substrate by Koto, Makoto, Watanabe, Masatoshi, Sugawa, Etsuko, Shimizu, Tomohiro, Shingubara, Shoso

    Published in Journal of crystal growth (15-10-2014)
    “…Nanowires have attracted significant interest because of their unique characteristics. Vapor–liquid–solid (VLS) growth is the standard method for fabricating…”
    Get full text
    Journal Article
  8. 8

    Improved control of silicon nanowire growth by the vapor–liquid–solid method using a diffusion barrier layer between catalyst and substrate by Koto, Makoto, Shimizu, Tomohiro, Shingubara, Shoso

    Published in Journal of crystal growth (15-04-2013)
    “…Vapor–liquid–solid (VLS)-grown nanowires are promising building blocks for next-generation devices because of their unique characteristics. Although Au is a…”
    Get full text
    Journal Article
  9. 9

    Si Etching Employing Steady-State Magnetron Plasma with Magnet at Anode Centered in a Cylindrical Reactor by Koto, Makoto, Narai, Akira, Sakaue, Hiroyuki, Shindo, Haruo, Yasuhiro Horiike, Yasuhiro Horiike

    Published in Japanese Journal of Applied Physics (01-12-1992)
    “…Magnetron plasma without localization of electrons has been studied by coupling electric fields on a cylindrical cathode with magnetic fields from a…”
    Get full text
    Journal Article
  10. 10

    Fabrication and characterization of CMOSFETs on porous silicon for novel device layer transfer by Sanda, H., McVittie, J., Koto, M., Yamagata, K., Yonehara, T., Nishi, Y.

    “…To develop a new device layer transfer technology with porous layer splitting, CMOS FETs were successfully fabricated on epitaxial layers with different…”
    Get full text
    Conference Proceeding