Search Results - "Koto, Makoto"
-
1
Thermodynamics and kinetics of the growth mechanism of vapor–liquid–solid grown nanowires
Published in Journal of crystal growth (15-08-2015)“…Nanowires are widely regarded as building blocks for next-generation devices because of their unique characteristics, particularly their morphology. The…”
Get full text
Journal Article -
2
Growth mechanisms of vapor–liquid–solid grown nanowires: A detailed analysis of irregular nanowire formation
Published in Journal of crystal growth (01-04-2014)“…Although vapor–liquid–solid (VLS) growth has become a standard method for producing nanowires, the underlying growth mechanisms have not been fully elucidated…”
Get full text
Journal Article -
3
Hexagonal Close-Packed Structure of Au Nanocatalysts Solidified after Ge Nanowire Vapor−Liquid−Solid Growth
Published in Nano letters (08-09-2010)“…We report that approximately 10% of the Au catalysts that crystallize at the tips of Ge nanowires following growth have the close-packed hexagonal crystal…”
Get full text
Journal Article -
4
Gold-Catalyzed Vapor-Liquid-Solid Germanium-Nanowire Nucleation on Porous Silicon
Published in Small (Weinheim an der Bergstrasse, Germany) (07-05-2010)“…Nanoporous Si(111) substrates are used to study the effects of Au catalyst coarsening on the nucleation of vapor–liquid–solid‐synthesized epitaxial Ge…”
Get full text
Journal Article -
5
Control of Crystal Orientation and Diameter of Silicon Nanowire Using Anodic Aluminum Oxide Template
Published in Japanese Journal of Applied Physics (01-06-2013)“…The control of the crystal orientation and diameter of vertically grown epitaxial Si nanowires was demonstrated using a combination of a vapor--liquid--solid…”
Get full text
Journal Article -
6
In-situ X-ray photoelectron spectroscopy of reactive-ion-etched surfaces on indium-tin oxide film employing alcohol gas
Published in Japanese Journal of Applied Physics (01-06-1992)“…Reactive ion etching (RIE) of the In-Sn oxide (ITO) film has been studied employing methyl alcohol (CH 3 OH). The ITO etch rate depends strongly on ion energy,…”
Get full text
Conference Proceeding Journal Article -
7
Diffusion suppression in vapor–liquid–solid Si nanowire growth by a barrier layer between the Au catalyst and substrate
Published in Journal of crystal growth (15-10-2014)“…Nanowires have attracted significant interest because of their unique characteristics. Vapor–liquid–solid (VLS) growth is the standard method for fabricating…”
Get full text
Journal Article -
8
Improved control of silicon nanowire growth by the vapor–liquid–solid method using a diffusion barrier layer between catalyst and substrate
Published in Journal of crystal growth (15-04-2013)“…Vapor–liquid–solid (VLS)-grown nanowires are promising building blocks for next-generation devices because of their unique characteristics. Although Au is a…”
Get full text
Journal Article -
9
Si Etching Employing Steady-State Magnetron Plasma with Magnet at Anode Centered in a Cylindrical Reactor
Published in Japanese Journal of Applied Physics (01-12-1992)“…Magnetron plasma without localization of electrons has been studied by coupling electric fields on a cylindrical cathode with magnetic fields from a…”
Get full text
Journal Article -
10
Fabrication and characterization of CMOSFETs on porous silicon for novel device layer transfer
Published in IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest (2005)“…To develop a new device layer transfer technology with porous layer splitting, CMOS FETs were successfully fabricated on epitaxial layers with different…”
Get full text
Conference Proceeding