Search Results - "Kotecki, D.E."

Direct Digital Synthesizer With Sine-Weighted DAC at 32-GHz Clock Frequency in InP DHBT Technology by Turner, S.E., Kotecki, D.E.

“…A direct digital synthesizer (DDS) implemented in InP double heterojunction bipolar transistor (DHBT) technology is reported. This DDS uses a sine-weighted…”
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Direct digital synthesizer with ROM-Less architecture at 13-GHz clock frequency in InP DHBT technology by Turner, S.E., Kotecki, D.E.

“…A direct digital synthesizer (DDS) implemented in InP double heterojunction bipolar transistor (DHBT) technology is reported. The DDS has a ROM-less…”
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4-bit adder-accumulator at 41-GHz clock frequency in InP DHBT technology by Turner, S.E., Elder, R.B., Jansen, D.S., Kotecki, D.E.

“…A 41-GHz 4-b adder-accumulator test circuit implemented in InP double heterojunction bipolar transistor (DHBT) technology using 624 transistors is reported…”
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Effects of annealing conditions on charge loss mechanisms in MOCVD Ba0·7Sr0·3TiO3 thin film capacitors by Baniecki, J.D., Laibowitz, R.B., Shaw, T.M., Saenger, K.L., Duncombe, P.R., Cabral, C., Kotecki, D.E., Shen, H., Lian, J., Ma, Q.Y.

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Simulation of the variability in microelectronic capacitors having polycrystalline dielectrics by Cousins, J.L., Kotecki, D.E.

“…The scaling down of on-chip microelectronic capacitors presents a considerable challenge for future microelectronic devices. High-permittivity polycrystalline…”
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36-GHz, 16 \times 6-Bit ROM in InP DHBT Technology Suitable for DDS Application by Manandhar, S., Turner, S.E., Kotecki, D.E.

“…A 16times6-bit read-only memory (ROM), employing an architecture suitable for use as a phase to amplitude converter for direct digital synthesizers (DDS), has…”
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Effects of annealing conditions on charge loss mechanisms in MOCVD Ba 0·7Sr 0·3TiO 3 thin film capacitors by Baniecki, J.D., Laibowitz, R.B., Shaw, T.M., Saenger, K.L., Duncombe, P.R., Cabral, C., Kotecki, D.E., Shen, H., Lian, J., Ma, Q.Y.

“…The leakage and dielectric relaxation currents of MOCVD Ba 0·7Sr 0·3TiO 3 thin films with Pt electrodes after post top electrode anneals in oxygen and forming…”
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A 312GHz fourth-harmonic voltage-controlled oscillator in 130nm SiGe BiCMOS technology by Yang Lin, Kotecki, D.E.

“…Terahertz (> 300 GHz) voltage-controlled oscillators (VCO) are envisioned for applications in remote sensing, advanced imaging and telecommunication. In this…”
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A 20-GHz and 46-GHz, 32x6-bit ROM for DDS Application in InP DHBT Technology by Manandhar, S., Turner, S.E., Kotecki, D.E.

“…Two 32times6-bit read only memory (ROM) circuits, employing an architecture suitable for use as a phase to amplitude converter for direct digital synthesizers…”
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Microelectronic Magnetic Flux Sensor for Hearing Aid Application by Kenney, C.R., Kotecki, D.E.

“…A 3-D microelectronic inductor has been fabricated and characterized for use as a magnetic flux sensor, also known as a telecoil, for a hearing aid…”
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Low-Voltage BiCMOS Circuit Topologies for the Design of a 19GHz, 1.2V, 466mW, 4-bit Accumulator in Silicon-Germanium by Bethel, R., Kotecki, D.E.

“…Advanced silicon-germanium (SiGe) bipolar and complementary metal oxide semiconductor (BiCMOS) manufacturing processes require novel circuit design methodology…”
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Reaction study of cobalt and silicon nitride by Nguyen, Tue, Ho, Herbert L., Kotecki, David E., Nguyen, Tai D.

“…The interaction of cobalt (Co) and low-pressure chemical-vapor-deposited silicon nitride (LPCVD Si3N4) during anneals from 200 °C−1000 °C in vacuum, Ar, and…”
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Benchmark results for high-speed 4-bit accumulators implemented in indium phosphide DHBT technology by Turner, S.E., Kotecki, D.E.

“…High-speed accumulators are frequently used as a benchmark of the high-speed performance and ability to yield large scale circuits in InP double heterojunction…”
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A Low-noise Low-offset Op Amp in 0.35μm CMOS Process by Zhineng Zhu, Tumati, R., Collins, S., Smith, R., Kotecki, D.E.

“…This paper describes a new structure for a low-noise, low-offset, high-speed operational amplifier with a bandwidth up to 10 MHz, designed in a 0.35 μm CMOS…”
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Nanopore with Transverse Nanoelectrodes for Electrical Characterization and Sequencing of DNA by Gierhart, B.C., Howitt, D.G., Chen, S.J., Zhineng Zhu, Kotecki, D.E., Smith, R.L., Collins, S.D.

“…Nanopore DNA sequencing devices show promise for rapidly decoding genetic information, although single nucleotide detection appears to be beyond the…”
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Direct‐laser writing of silicon microstructures: Raman microprobe diagnostics and modeling of the nucleation phase of deposition by Herman, Irving P., Magnotta, Frank, Kotecki, David E.

“…Two topics vital to the analysis and applications of direct‐laser writing of silicon microstructures are addressed here: optical diagnostics and modeling. The…”
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Direct Gating of Microchannel Plates by Jacoby, Barry A., Kotecki, David E., Lear, Richard D.

“…We investigated whether direct fast gating of microchannel plates (MCP) is possible. Our experiments measured the MCP gain as a function of time (on the…”
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