Search Results - "Koswatta, S. O."

Performance Comparison Between p-i-n Tunneling Transistors and Conventional MOSFETs by Koswatta, S.O., Lundstrom, M.S., Nikonov, D.E.

“…In this paper, we present a detailed performance comparison between conventional n-i-n MOSFET transistors and tunneling field-effect transistors (TFETs) based…”
Get full text

Geometry dependent tunnel FET performance - dilemma of electrostatics vs. quantum confinement by Yeqing Lu, Seabaugh, A, Fay, P, Koester, S J, Laux, S E, Haensch, W, Koswatta, S O

“…Tunneling field-effect transistors (TFETs) are attracting a lot of interest because of their potential to reduce power dissipation in logic applications…”
Get full text

Graphene nanoribbon Schottky-barrier FETs for end-of-the-roadmap CMOS: Challenges and opportunities by Zhang, Q, Lu, Y, Xing, G H, Richter, C A, Koester, S J, Koswatta, S O

“…On the ITR.S roadmap, the physical gate length, LG, has been rapidly scaling down, and will reach values below ~ 10nm beyond 2020. The single-gate (SG)…”
Get full text

On the Possibility of Obtaining MOSFET-Like Performance and Sub-60-mV/dec Swing in 1-D Broken-Gap Tunnel Transistors by Koswatta, S O, Koester, S J, Haensch, W

“…Tunneling field-effect transistors (TFETs) have gained a great deal of interest recently due to their potential to reduce power dissipation in integrated…”
Get full text

Ultimate RF Performance Potential of Carbon Electronics by Koswatta, S. O., Valdes-Garcia, A., Steiner, M. B., Yu-Ming Lin, Avouris, P.

“…Carbon electronics based on carbon nanotube array field-effect transistors (AFETs) and 2-D graphene field-effect transistors (GFETs) have recently attracted…”
Get full text

Nonequilibrium Green's Function Treatment of Phonon Scattering in Carbon-Nanotube Transistors by Koswatta, S.O., Hasan, S., Lundstrom, M.S., Anantram, M.P., Nikonov, D.E.

“…We present a detailed treatment of dissipative quantum transport in carbon-nanotube field-effect transistors (CNT-FETs) using the nonequilibrium Green's…”
Get full text

Ultra Low Contact Resistivities for CMOS Beyond 10-nm Node by Zhen Zhang, Koswatta, S. O., Bedell, S. W., Baraskar, A., Guillorn, M., Engelmann, S. U., Yu Zhu, Gonsalves, J., Pyzyna, A., Hopstaken, M., Witt, C., Li Yang, Fei Liu, Newbury, J., Wei Song, Cabral, C., Lofaro, M., Ozcan, A. S., Raymond, M., Lavoie, C., Sleight, J. W., Rodbell, K. P., Solomon, P. M.

“…Contact resistances are directly measured for contacts with sizes from 25 to 330 nm using e-beam based nano-TLM devices. Record low contact resistivities ~1.5…”
Get full text

Off-state self-heating, micro-hot-spots, and stress-induced device considerations in scaled technologies by Koswatta, S. O., Mavilla, N., Bajaj, M., Johnson, J., Gundapaneni, S., Scott, C., Freeman, G., Poindexter, D., McLaughlin, P. S., Mittl, S. W., Sigal, L., Warnock, J. D., Zamdmer, N., Lee, S., Wachnik, R., Lin, C.-H, Nowak, E.

“…In this paper we show that devices in scaled technologies could undergo self-heating (SH) even in the off-state when subjected to stress conditions that would…”
Get full text

RF performance projections for 2D graphene transistors: Role of parasitics at the ballistic transport limit by Pei Zhao, Jena, D., Koswatta, S. O.

“…Graphene is a two-dimensional zero bandgap material with carbon atoms arranged in a honeycomb lattice. Although 2D monolayer graphene lacks a bandgap, it still…”
Get full text

Compact model and performance estimation for tunneling nanowire FET by Solomon, P. M., Frank, D. J., Koswatta, S. O.

“…A compact model is presented which realistically reproduces TFET characteristics and allows complex circuit simulation and parameter optimization studies. The…”
Get full text

Simulation of phonon-assisted band-to-band tunneling in carbon nanotube field-effect transistors by Koswatta, Siyuranga O., Lundstrom, Mark S., Anantram, M. P., Nikonov, Dmitri E.

“…Electronic transport in a carbon nanotube metal-oxide-semiconductor field effect transistor (MOSFET) is simulated using the nonequilibrium Green's functions…”
Get full text

Dependence of DC characteristics of CNT MOSFETs on bandstructure models by Koswatta, S.O., Neophytou, N., Kienle, D., Fiori, G., Lundstrom, M.S.

“…Since their discovery in the early 1990s, the interest in carbon nanotube (CNT) electronics has exploded. One main factor that controls the device performance…”
Get full text

Scalable and fully self-aligned n-type carbon nanotube transistors with gate-all-around by Franklin, A. D., Koswatta, S. O., Farmer, D., Tulevski, G. S., Smith, J. T., Miyazoe, H., Haensch, W.

“…While proven to provide high performance at sub-10 nm lengths, carbon nanotube (CNT) field-effect transistors (FETs) typically employ impractical gate…”
Get full text

Self-assembled monolayer resists for electron beam lithography by Koswatta, S.O., Scott, A.D., Bhattacharya, S., Janes, D.B.

“…In this paper, we report the resist characteristics of self-assembled alkanethiol monolayers on gold upon electron beam exposure. We have observed only…”
Get full text