A Triple-Protection Structured COB FRAM with 1.2-V Operation and 1017-Cycle Endurance

We have developed a ferroelectric RAM (FRAM) with a low operation voltage of 1.2 V and a high switching endurance up to 1017 cycles. Our newly developed triple-protection structured cell array, has constructed without an additional mask step, effectively protects 0.4-μm 2 ferroelectric capacitors fr...

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Bibliographic Details

Published in:	2015 IEEE International Memory Workshop (IMW) pp. 1 - 4
Main Authors:	Saito, Hitoshi, Sugimachi, Tatsuya, Nakamura, Ko, Ozawa, Soichiro, Sashida, Naoya, Mihara, Satoru, Hikosaka, Yukinobu, Wensheng Wang, Hori, Tomoyuki, Takai, Kazuaki, Nakazawa, Mitsuharu, Kosugi, Noboru, Okuda, Masaki, Hamada, Makoto, Kawashima, Shoichiro, Eshita, Takashi, Matsumiya, M.
Format:	Conference Proceeding
Language:	English
Published:	IEEE 01-05-2015
Subjects:	Arrays Capacitors Electrodes Ferroelectric films Nonvolatile memory Random access memory Switches
Online Access:	Get full text
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