Search Results - "Kostylev, S. A."

Dimensionality effects in chalcogenide-based devices by Kostylev, S.A.

“…The multiplicity of fundamental bulk effects with small characteristic dimensions and short times and diversity of their combinations attracts a lot of…”
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Low-field amorphous state resistance and threshold voltage drift in chalcogenide materials by Pirovano, A., Lacaita, A.L., Pellizzer, F., Kostylev, S.A., Benvenuti, A., Bez, R.

“…A detailed investigation of the time evolution for the low-field resistance R/sub off/ and the threshold voltage V/sub th/ in chalcogenide-based phase-change…”
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Threshold and Filament Current Densities in Chalcogenide-Based Switches and Phase-Change-Memory Devices by Kostylev, S.A.

“…Threshold current density of switching was found to grow several decades at constant threshold electric field with reducing interelectrode distance. Data are…”
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Mechanism of the isotermic amorphous-to-crystalline phase transition in Ge:Sb:Te ternary alloys by González-Hernández, J., Prokhorov, E. F., Vorobiev, Yu. V., Morales-Sánchez, E., Mendoza-Galván, A., Kostylev, S. A., Gorobets, Yu. I., Zakharchenko, V. N., Zakharchenko, R. V.

“…The kinetics of the amorphous-to-crystalline (fcc) phase transition under isothermal treatments has been investigated in alloys with the composition close to…”
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Reversible Switching in Thin Amorphous Chalcogenide Films—Electronic Effects by Shaw, M. P., Holmberg, S. H., Kostylev, S. A.

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New technology of in-vivo monitoring of functional state of organs and systems of human body by Kostylev, S. A., Yatsunenko, S. A., Yatsunenko, A. G.

“…Bioimpedance-information-puncture monitoring and diagnostics technology consists of measurement and comparison of the amplitude and phase of active and…”
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Peculiarities of high-frequency C-V measurements in n-type GaAs thin-film structures by Kostylev, S.A, Prokhorov, E.F, Gorev, N.B, Kodzhespirova, I.F

“…In n-type GaAs thin film structures, the presence of an n- v junction between a low-resistivity film and a semi-insulating compensated substrate causes errors…”
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Effect of substrate inhomogeneity on extrinsic photoconductivity of n-type GaAs thin-film structures under backgating by Kostylev, S.A., Prokhorov, E.F., Gorev, N.B., Kodzhespirova, I.F., Kovalenko, Yu.A.

“…The extrinsic photoconductivity of n-type GaAs thin-film structures under backgating was studied. It is shown that the change of the spatial inhomogeneity of…”
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SET to RESET Programming in Phase Change Memories by Karpov, I.V., Kostylev, S.A.

“…Experimental data on details of SET (crystalline) to RESET (amorphous) transition are presented for Ge 2 Sb 2 Te 5 (GST) nonvolatile memory cell. It is shown…”
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Preswitching and postswitching phenomena in amorphous semiconducting films by Shaw, M.P., Moss, S.C., Kostylev, S.A., Slack, L.H.

“…Low-duty-cycle pulsed dc switching experiments have been performed on a variety of thin-film Te-based semiconducting glasses. No premonitory effects are…”
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Recovery and other effects of annihilation of high current density filaments after switching in chalcogenide alloys by Kostylev, S.A.

“…Results of detailed experimental study of recovery times of threshold voltage, low field resistance, threshold current and maximum delay are reported with…”
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On functional diversity of localised intervalley charge carrier transfer by Kostylev, S. A., Yatsunenko, S. A., Vintman, Z. L., Yatsunenko, A. G.

“…Possibilities of dramatic improvement in functionality by effects of bulk N-type Negative Differential Conductivity (N-NDC) in long inhomogeneous samples are…”
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New manufacturing technology of microwave elements and units for communication and navigation systems by Kostylev, S. A., Yatsunenko, S. A., Vintman, Z. L., Djevinski, V. P., Yatsunenko, A. G.

“…A new microwave integration technology of electroplating is proposed, which combines formation and mounting of multilayer structures. It uses a minimal amount…”
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Low-frequency capacitance–voltage characterization of deep levels in film–buffer layer–substrate GaAs structures by Kostylev, Sergey A., Prokhorov, Evgeny F., Gorev, Nikolai B., Kodzhespirova, Inna F., Kovalenko, Yury A.

“…The low-frequency capacitance–voltage characteristic of a three-layered GaAs structure (a low-resistivity film, a buffer layer, and a semi-insulating…”
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Electroluminescence of sublimed ZnS(Mn, Cu) phosphor by Kodzhespirov, F. F., Korsun, V. M., Kostylev, S. A.

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High temperature operation of photovoltaic solar cells in one- and two-stage systems by Meneses-Rodriguez, D., Horley, P.P., Kostylev, S.A., Gonzalez-Hernandez, J., Vorobiev, Y.V.

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Technique and instrument for the characterization of deep traps in GaAs MESFET structures by Gorev, N.B., Kodzespirova, I.F., Kostylev, S.A., Kovalenko, Yu.A., Prokhorov, E.F.

“…The effective concentration of vacant deep traps in the buffer layer and substrate of a GaAs MESFET structure governs the overall effect of these traps on the…”
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