Search Results - "Kostopoulos, A."

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  1. 1

    In-situ SiNx/InN structures for InN field-effect transistors by Zervos, Ch, Adikimenakis, A., Beleniotis, P., Kostopoulos, A., Kayambaki, M., Tsagaraki, K., Konstantinidis, G., Georgakilas, A.

    Published in Applied physics letters (04-04-2016)
    “…Critical aspects of InN channel field-effect transistors (FETs) have been investigated. SiNx dielectric layers were deposited in-situ, in the molecular beam…”
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    Journal Article
  2. 2

    Effect of rapid thermal annealing on polycrystalline InGaN thin films deposited on fused silica substrates by Kazazis, S.A., Papadomanolaki, E., Androulidaki, M., Tsagaraki, K., Kostopoulos, A., Aperathitis, E., Iliopoulos, E.

    Published in Thin solid films (29-07-2016)
    “…In this work, we report on the effects of Rapid Thermal Annealing (RTA) on the structural, electrical and optical properties of polycrystalline InGaN thin…”
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    Journal Article
  3. 3

    Electron density and currents of AlN/GaN high electron mobility transistors with thin GaN/AlN buffer layer by Bairamis, A., Zervos, Ch, Adikimenakis, A., Kostopoulos, A., Kayambaki, M., Tsagaraki, K., Konstantinidis, G., Georgakilas, A.

    Published in Applied physics letters (15-09-2014)
    “…AlN/GaN high electron mobility transistor (HEMT) structures with thin GaN/AlN buffer layer have been analyzed theoretically and experimentally, and the effects…”
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    Journal Article
  4. 4

    InAlN/GaN HEMTs: a first insight into technological optimization by Kuzmik, J., Kostopoulos, A., Konstantinidis, G., Carlin, J.-F., Georgakilas, A., Pogany, D.

    Published in IEEE transactions on electron devices (01-03-2006)
    “…High-electron mobility transistors (HEMTs) were fabricated from heterostructures consisting of undoped In/sub 0.2/Al/sub 0.8/N barrier and GaN channel layers…”
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    Journal Article
  5. 5

    Long-term stability of transparent n/p ZnO homojunctions grown by rf-sputtering at room-temperature by V. Kampylafka, A. Kostopoulos, M. Modreanu, M. Schmidt, E. Gagaoudakis, K. Tsagaraki, V. Kontomitrou, G. Konstantinidis, G. Deligeorgis, G. Kiriakidis, E. Aperathitis

    Published in Journal of Materiomics (01-09-2019)
    “…ZnO-based n/p homojunctions were fabricated by sputtering from a single zinc nitride target at room temperature on metal or ITO-coated glass and Si substrates…”
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    Journal Article
  6. 6

    Transparent p/n diode device from a single zinc nitride sputtering target by Kambilafka, V., Kostopoulos, A., Androulidaki, M., Tsagaraki, K., Modreanu, M., Aperathitis, E.

    Published in Thin solid films (01-12-2011)
    “…Zinc oxide (ZnO) thin films showing bipolar conductivity were fabricated by sputtering of zinc nitride target in plasma containing mixture of Ar–O 2 gasses…”
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    Journal Article Conference Proceeding
  7. 7

    Negative index short-slab pair and continuous wires metamaterials in the far infrared regime by Gundogdu, T F, Katsarakis, N, Kafesaki, M, Penciu, R S, Konstantinidis, G, Kostopoulos, A, Economou, E N, Soukoulis, C M

    Published in Optics express (09-06-2008)
    “…Using transmission and reflection measurements under normal incidence in one and three layers of a mum-scale metamaterial consisting of pairs of short-slabs…”
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    Journal Article
  8. 8

    Multimodal microscopy test standard for scanning microwave, electron, force and optical microscopy by Haenssler, Olaf C., Wieghaus, M. F., Kostopoulos, A., Doundoulakis, G., Aperathitis, E., Fatikow, S., Kiriakidis, G.

    Published in Journal of micro-bio robotics (01-12-2018)
    “…We report on measurement results of a test standard suitable for different microscopic modalities. These findings were obtained by a multimodal hybrid…”
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    Journal Article
  9. 9

    Gate-lag and drain-lag effects in (GaN)/InAlN/GaN and InAlN/AlN/GaN HEMTs by Kuzmik, J., Carlin, J.-F., Gonschorek, M., Kostopoulos, A., Konstantinidis, G., Pozzovivo, G., Golka, S., Georgakilas, A., Grandjean, N., Strasser, G., Pogany, D.

    “…Gate and drain‐lag effects are studied in (GaN)/InAlN/GaN and InAlN/AlN/GaN HEMTs grown on sapphire. Electron trapping on the surface states between the gate…”
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    Journal Article
  10. 10

    High electron mobility transistors based on the AlN/GaN heterojunction by Adikimenakis, A., Aretouli, K.E., Iliopoulos, E., Kostopoulos, A., Tsagaraki, K., Konstantinidis, G., Georgakilas, A.

    Published in Microelectronic engineering (01-04-2009)
    “…The development of high electron mobility transistors (HEMTs) from AlN/GaN heterostructures, grown by plasma assisted molecular beam epitaxy has been…”
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    Journal Article Conference Proceeding
  11. 11

    Bragg polariton luminescence from a GaN membrane embedded in all dielectric microcavity by Trichas, E., Pelekanos, N. T., Iliopoulos, E., Monroy, E., Tsagaraki, K., Kostopoulos, A., Savvidis, P. G.

    Published in Applied physics letters (30-05-2011)
    “…We report on the development of a band gap-selective photochemical etching technique capable of producing 200 nm thick optical quality freestanding GaN…”
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    Journal Article
  12. 12

    Enhancing information lookup privacy through homomorphic encryption by Fotiou, N., Trossen, D., Marias, G.F., Kostopoulos, A., Polyzos, G.C.

    Published in Security and communication networks (01-12-2014)
    “…ABSTRACTRevealing one's interests in communication has been recognized as a growing problem in the Internet. We postulate that it is desirable for future…”
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    Journal Article
  13. 13

    Response to anions of AlGaN∕GaN high-electron-mobility transistors by Alifragis, Y., Georgakilas, A., Konstantinidis, G., Iliopoulos, E., Kostopoulos, A., Chaniotakis, N. A.

    Published in Applied physics letters (19-12-2005)
    “…The response of AlGaN∕GaN electrolyte-gate high-electron-mobility transistors to various concentrations of the potassium salts KCl, KBr, KNO3, and KSCN in an…”
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    Journal Article
  14. 14

    Experimental demonstration of negative magnetic permeability in the far-infrared frequency regime by Gundogdu, T. F., Tsiapa, I., Kostopoulos, A., Konstantinidis, G., Katsarakis, N., Penciu, R. S., Kafesaki, M., Economou, E. N., Koschny, Th, Soukoulis, C. M.

    Published in Applied physics letters (21-08-2006)
    “…Using transmission and reflection measurements in a five layer micrometer-scale split-ring resonator (SRR) system, fabricated by a photolithography procedure,…”
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    Journal Article
  15. 15

    Control of the polarity of molecular-beam-epitaxy-grown GaN thin films by the surface nitridation of Al2O3 (0001) substrates by Mikroulis, S., Georgakilas, A., Kostopoulos, A., Cimalla, V., Dimakis, E., Komninou, Ph

    Published in Applied physics letters (22-04-2002)
    “…The nitridation of Al2O3 (0001) substrate surfaces by radio-frequency nitrogen plasma has been investigated. A 1.5-nm-thick surface nitride layer occurred for…”
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    Journal Article
  16. 16

    Growth Optimization of an Electron Confining InN/GaN Quantum Well Heterostructure by Dimakis, E., Iliopoulos, E., Kayambaki, M., Tsagaraki, K., Kostopoulos, A., Konstantinidis, G., Georgakilas, A.

    Published in Journal of electronic materials (01-04-2007)
    “…The molecular beam epitaxy of In-face InN (0001) epilayers with optimized surface morphology, structural quality, and electrical properties was investigated…”
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    Journal Article
  17. 17
  18. 18

    Applications of AI in public health: Improving access to high-quality evidence syntheses by Dobbins, M, Rogers, K, Miller, A, Kostopoulos, A, Husson, H

    Published in European journal of public health (01-11-2024)
    “…Abstract Issue Using the best available evidence is crucial for effective public health practice. Health Evidence™ provides access to high-quality synthesis…”
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    Journal Article
  19. 19

    Metallic bonding methodology for heterogeneous integration of optoelectronic dies to CMOS circuits by Robogiannakis, P., Kyriakis-Bitzaros, E.D., Minoglou, K., Katsafouros, S., Kostopoulos, A., Konstantinidis, G., Halkias, G.

    Published in Microelectronic engineering (01-04-2008)
    “…A metallic bonding methodology appropriate for wafer-level optoelectronic die to complementary metal oxide semiconductor (CMOS) circuit integration is…”
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  20. 20

    Computer-based automated estimation of breast vascularity and correlation with breast cancer in DCE-MRI images by Kostopoulos, Spiros A, Vassiou, Katerina G, Lavdas, Eleftherios, Cavouras, Dionisis A, Kalatzis, Ioannis K, Asvestas, Pantelis A, Arvanitis, Dimitrios L, Fezoulidis, Ioannis V, Glotsos, Dimitris T

    Published in Magnetic resonance imaging (01-01-2017)
    “…Abstract Dynamic contrast enhanced Magnetic Resonance Imaging (DCE-MRI) with gadolinium constitutes one of the most promising protocols for boosting up the…”
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    Journal Article