Search Results - "Kostial, Helmar"

Controlled n -type doping of AlN:Si films grown on 6H-SiC(0001)by plasma-assisted molecular beam epitaxy by Ive, Tommy, Brandt, Oliver, Kostial, Helmar, Friedland, Klaus J., Däweritz, Lutz, Ploog, Klaus H.

“…We study the properties of Si-doped AlN films grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy. Whereas nominally undoped AlN films are…”
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Properties of InN layers grown on 6H–SiC(0001) by plasma-assisted molecular beam epitaxy by Ive, Tommy, Brandt, Oliver, Ramsteiner, Manfred, Giehler, Manfred, Kostial, Helmar, Ploog, Klaus H.

“…We study the impact of different buffer layers and growth conditions on the properties of InN layers grown on 6H–SiC(0001) by plasma-assisted molecular beam…”
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Crack-free and conductive Si-doped AlN∕GaN distributed Bragg reflectors grown on 6H-SiC(0001) by Ive, Tommy, Brandt, Oliver, Kostial, Helmar, Hesjedal, Thorsten, Ramsteiner, Manfred, Ploog, Klaus H.

“…We demonstrate Si-doped n-type AlN∕GaN distributed Bragg reflectors grown on 6H-SiC(0001). The structures are crack-free and have a stopband centered around…”
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High p -type conductivity in cubic GaN/GaAs(113) A by using Be as the acceptor and O as the codopant by Brandt, Oliver, Yang, Hui, Kostial, Helmar, Ploog, Klaus H.

“…P-type room-temperature conductivities as high as 50/Ω cm are achieved in cubic GaN layers by the concept of reactive codoping. We use Be as the acceptor…”
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Impurity-induced breakdown in GaAs with partially ordered Si-doping by KOSTIAL, H, IHN, T, ASCHE, M, HEY, R, PLOOG, K, KOCH, F

“…The static and dynamic current-voltage behaviour including the temperature and magnetic field dependence are investigated in GaAs with dopants arranged in…”
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Low thermal drift in highly sensitive doped channel Al sub(0.3)Ga sub(0.7)As/GaAs/In sub(0.2)Ga sub(0.8)As micro-Hall element by Kunets, Vasyl P, Dobbert, Julia, Mazur, Yuriy I, Salamo, Gregory J, M&ampuumlller, Uwe, Masselink, W T, Kostial, Helmar, Wiebicke, Evi

“…Micro-Hall sensors with high sensitivity, low noise, and high thermal stability, 5 mu m square, are fabricated using pseudomorphic Al sub(0.3)Ga…”
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Low thermal drift in highly sensitive doped channel Al0.3Ga0.7As/GaAs/In0.2Ga0.8As micro-Hall element by Kunets, Vasyl P., Dobbert, Julia, Mazur, Yuriy I., Salamo, Gregory J., Müller, Uwe, Masselink, W. T., Kostial, Helmar, Wiebicke, Evi

“…Micro-Hall sensors with high sensitivity, low noise, and high thermal stability, 5 μm square, are fabricated using pseudomorphic Al 0.3 Ga 0.7 As/GaAs/In y Ga…”
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High electric field performance of Al 0.3Ga 0.7As/GaAs and Al 0.3Ga 0.7As/GaAs/In 0.3Ga 0.7As quantum well micro-Hall devices by Kunets, Vasyl P., Hoerstel, Wolfgang, Kostial, Helmar, Kissel, Heiko, Müller, Uwe, Tarasov, Georgiy G., Mazur, Yuriy I., Zhuchenko, Zoryana Ya, Masselink, William Ted

“…Quantum well micro-Hall devices based on uniformly Si-doped Al 0.3Ga 0.7As/GaAs and Si-δ-doped Al 0.3Ga 0.7As/GaAs/In 0.3Ga 0.7As heterostructures are…”
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High electric field performance of Al0.3Ga0.7As/GaAs and Al0.3Ga0.7As/GaAs/In0.3Ga0.7As quantum well micro-Hall devices by KUNETS, Vasyl P, HOERSTEL, Wolfgang, KOSTIAL, Helmar, KISSEL, Heiko, MÜLLER, Uwe, TARASOV, Georgiy G, MAZUR, Yuriy I, ZHUCHENKO, Zoryana Ya, MASSELINK, William Ted

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Selective electroluminescence from a single stack of sidewall quantum wires on patterned GaAs (311)A substrates by Ma, Wenquan, Nötzel, Richard, Ramsteiner, Manfred, Jahn, Uwe, Schönherr, Hans-Peter, Kostial, Helmar, Ploog, Klaus H.

“…A p-i-n light-emitting diode (LED) with a single stack of sidewall quantum wires in the center of the intrinsic region has been fabricated by molecular-beam…”
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