Search Results - "Kosiel, Kamil"
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Ultrasensitive tantalum oxide nano-coated long-period gratings for detection of various biological targets
Published in Biosensors & bioelectronics (15-05-2019)“…In this work we discussed a label-free biosensing application of long-period gratings (LPGs) optimized in refractive index (RI) sensitivity by deposition of…”
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Evaluation of Bacterial Adhesion to the ZrO2 Atomic Layer Deposited on the Surface of Cobalt-Chromium Dental Alloy Produced by DMLS Method
Published in Materials (26-02-2021)“…The main purpose of the research was to analyze the influence of surface modification of the cobalt-based alloy used in dental prosthetics by applying…”
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In-situ thin film copper–copper thermocompression bonding for quantum cascade lasers
Published in Journal of materials science. Materials in electronics (01-06-2021)“…The choice of metals, bonding conditions and interface purity are critical parameters for the performance of metal–metal bonding quality for quantum cascade…”
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LMR: A software for modeling and reverse optimization of straight-core lossy mode resonance (LMR) based sensors
Published in Expert systems with applications (01-10-2024)“…Lossy mode resonance (LMR) is a physical phenomenon recently exploited for fiber optic sensing. LMR-based devices are widely used for detecting refractive…”
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Tailoring properties of lossy-mode resonance optical fiber sensors with atomic layer deposition technique
Published in Optics and laser technology (01-06-2018)“…•Two-nanofilm-comprising overlay for lossy mode resonance fiber sensor is presented.•Two various high-refractive-index materials were applied for the overlay…”
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Investigation of oval defects in (In)Ga(Al)As/GaAs heterostructures by spatially resolved photoluminescence and micro-cathodoluminescence
Published in Materials science in semiconductor processing (01-02-2006)“…Oval defects, which are commonly found in epitaxial (In)Ga(Al)As heterostructures grown by molecular beam epitaxy (MBE) technique, are studied in this paper…”
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Local atomic order of the amorphous TaO x thin films in relation to their chemical resistivity
Published in RSC advances (31-10-2019)“…The experimental and theoretical studies of the local atomic order and chemical binding in tantalum oxide amorphous films are presented. The experimental…”
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MBE—Technology for nanoelectronics
Published in Vacuum (03-06-2008)“…Molecular beam epitaxy (MBE) is presented as a powerful and flexible technology for research and development (R&D) as well as for mass production of…”
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Vertical GaN Trench‐MOSFETs Fabricated on Ammonothermally Grown Bulk GaN Substrates
Published in Physica status solidi. A, Applications and materials science (01-11-2024)“…Herein, the fabrication and characterization of vertical GaN trench‐MOSFETs on ammonothermally grown bulk GaN substrates have been reported. A number of…”
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Evaluation of Bacterial Adhesion to the ZrO 2 Atomic Layer Deposited on the Surface of Cobalt-Chromium Dental Alloy Produced by DMLS Method
Published in Materials (26-02-2021)“…The main purpose of the research was to analyze the influence of surface modification of the cobalt-based alloy used in dental prosthetics by applying…”
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Journal Article -
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Compositional, structural, and optical properties of atomic layer deposited tantalum oxide for optical fiber sensor overlays
Published in Journal of vacuum science & technology. A, Vacuum, surfaces, and films (01-05-2018)“…Although Ta2O5 is thermodynamically the most stable form of TaxOy, the chemical composition/stoichiometry of TaxOy films may generally be complex. On the other…”
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Theoretical investigation of metal–metal waveguides for terahertz quantum-cascade lasers
Published in Optical and quantum electronics (01-04-2015)“…We report our theoretical investigations of metal–metal waveguides for terahertz quantum-cascade lasers. The device is considered as a planar, multilayer…”
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Local atomic order of the amorphous TaOx thin films in relation to their chemical resistivity
Published in RSC advances (04-11-2019)“…The experimental and theoretical studies of the local atomic order and chemical binding in tantalum oxide amorphous films are presented. The experimental…”
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Temperature-dependent electrical characterization of high-voltage AlGaN/GaN-on-Si HEMTs with Schottky and ohmic drain contacts
Published in Solid-state electronics (01-09-2015)“…[Display omitted] •We fabricated HV AlGaN/GaN-on-Si HEMTs with Schottky and ohmic drain electrodes.•We examine impact of temperature on the electrical…”
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Local atomic order of the amorphous TaO thin films in relation to their chemical resistivity
Published in RSC advances (04-11-2019)“…The experimental and theoretical studies of the local atomic order and chemical binding in tantalum oxide amorphous films are presented. The experimental…”
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Journal Article -
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Electrical isolation of GaAs and AlGaAs/GaAs Quantum Cascade Lasers by deep hydrogen implantation
Published in Materials science in semiconductor processing (01-02-2018)“…Ion implantation can be applied to form the electrical isolation in AlGaAs/GaAs Quantum Cascade Laser (QCL) instead of mesa etching. In this paper, we present…”
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Direct Au–Au bonding technology for high performance GaAs/AlGaAs quantum cascade lasers
Published in Optical and quantum electronics (01-04-2015)“…In this paper we investigate chip bonding technology of GaAs/AlGaAs quantum cascade lasers (QCLs). Its results have strong influence on final performance of…”
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MOVPE InP based material for millimetsubmillimeter wave generation and amplificationer and
Published in Journal of Telecommunications and Information Technology (30-03-2002)“…The potential of the MOVPE growth process for millimeter and submillimeter wave generation and amplification is presented. The increase in layer quality, the…”
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The determination of the chemical composition profile of the GaAs/AlGaAs heterostructures designed for quantum cascade lasers by means of synchrotron radiation
Published in Radiation physics and chemistry (Oxford, England : 1993) (01-10-2011)“…The chemical composition profile of the GaAs/AlGaAs quantum cascade structures grown on (0 0 1) GaAs substrate by molecular beam epitaxy is studied by a…”
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