Search Results - "Koryazhkina, Maria"

Variability in Resistive Memories by Roldán, Juan B., Miranda, Enrique, Maldonado, David, Mikhaylov, Alexey N., Agudov, Nikolay V., Dubkov, Alexander A., Koryazhkina, Maria N., González, Mireia B., Villena, Marco A., Poblador, Samuel, Saludes-Tapia, Mercedes, Picos, Rodrigo, Jiménez-Molinos, Francisco, Stavrinides, Stavros G., Salvador, Emili, Alonso, Francisco J., Campabadal, Francesca, Spagnolo, Bernardo, Lanza, Mario, Chua, Leon O.

“…Resistive memories are outstanding electron devices that have displayed a large potential in a plethora of applications such as nonvolatile data storage,…”
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Stochastic Memristive Interface for Neural Signal Processing by Gerasimova, Svetlana A., Belov, Alexey I., Korolev, Dmitry S., Guseinov, Davud V., Lebedeva, Albina V., Koryazhkina, Maria N., Mikhaylov, Alexey N., Kazantsev, Victor B., Pisarchik, Alexander N.

“…We propose a memristive interface consisting of two FitzHugh–Nagumo electronic neurons connected via a metal–oxide (Au/Zr/ZrO2(Y)/TiN/Ti) memristive synaptic…”
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A Statistical Study of Resistive Switching Parameters in Au/Ta/ZrO2(Y)/Ta2O5/TiN/Ti Memristive Devices by Maldonado, David, Belov, Alexey I., Koryazhkina, Maria N., Jiménez-Molinos, Francisco, Mikhaylov, Alexey N., Roldán, Juan B.

“…Variability is an inherent property of memristive devices based on the switching of resistance in a simple metal–oxide–metal structure compatible with the…”
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Effect of Training Pulse Parameters on the Synaptic Plasticity of a ZrO2(Y)‐Based Memristive Device by Koryazhkina, Maria N., Ryabova, Margarita A., Okulich, Evgeniya V., Belov, Alexey I., Antonov, Ivan N., Shenina, Maria E., Shchanikov, Sergey A., Mikhaylov, Alexey N., Filatov, Dmitrii O., Valenti, Davide, Spagnolo, Bernardo

“…Herein, the effect of training pulse parameters on the synaptic plasticity of a ZrO2(Y)‐based memristive device has been investigated. It is shown that the…”
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Electrical Characteristics of CMOS-Compatible SiOx-Based Resistive-Switching Devices by Koryazhkina, Maria N., Filatov, Dmitry O., Tikhov, Stanislav V., Belov, Alexey I., Serov, Dmitry A., Kryukov, Ruslan N., Zubkov, Sergey Yu, Vorontsov, Vladislav A., Pavlov, Dmitry A., Gryaznov, Evgeny G., Orlova, Elena S., Shchanikov, Sergey A., Mikhaylov, Alexey N., Kim, Sungjun

“…The electrical characteristics and resistive switching properties of memristive devices have been studied in a wide temperature range. The insulator and…”
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Ion Migration Polarization in the Yttria Stabilized Zirconia Based Metal-Oxide-Metal and Metal-Oxide-Semiconductor Stacks for Resistive Memory by Koryazhkina, Maria, Morozov, Alexander, Antonov, Ivan, Gorshkov, Oleg, Tikhov, Stanislav, Filatov, Dmitry

“…We report the investigations of the ion migration polarization in the yttria stabilized zirconia (YSZ) thin films in the Metal-Oxide-Metal (MOM) and…”
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Silicon-Compatible Memristive Devices Tailored by Laser and Thermal Treatments by Koryazhkina, Maria N., Filatov, Dmitry O., Tikhov, Stanislav V., Belov, Alexey I., Korolev, Dmitry S., Kruglov, Alexander V., Kryukov, Ruslan N., Zubkov, Sergey Yu, Vorontsov, Vladislav A., Pavlov, Dmitry A., Tetelbaum, David I., Mikhaylov, Alexey N., Shchanikov, Sergey A., Kim, Sungjun, Spagnolo, Bernardo

“…Nowadays, memristors are of considerable interest to researchers and engineers due to the promise they hold for the creation of power-efficient memristor-based…”
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Fabrication of Metal Nanoparticle Arrays in the ZrO2(Y), HfO2(Y), and GeOx Films by Magnetron Sputtering by Kudryashov, Mikhail, Korotaeva, Irina, Bobrov, Alexander, Kasatkin, Alexander, Shenina, Maria, Filatov, Dmitry, Antonov, Ivan, Gorshkov, Oleg, Koryazhkina, Maria

“…The single sheet arrays of Au nanoparticles (NPs) embedded into the ZrO2(Y), HfO2(Y), and GeOx (x≈2) films have been fabricated by the alternating deposition…”
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A Statistical Study of Resistive Switching Parameters in Au/Ta/ZrO 2 (Y)/Ta 2 O 5 /TiN/Ti Memristive Devices by Maldonado, David, Belov, Alexey I., Koryazhkina, Maria N., Jiménez-Molinos, Francisco, Mikhaylov, Alexey N., Roldán, Juan B.

“…Variability is an inherent property of memristive devices based on the switching of resistance in a simple metal–oxide–metal structure compatible with the…”
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Multilayer Metal‐Oxide Memristive Device with Stabilized Resistive Switching by Mikhaylov, Alexey, Belov, Alexey, Korolev, Dmitry, Antonov, Ivan, Kotomina, Valentina, Kotina, Alina, Gryaznov, Evgeny, Sharapov, Alexander, Koryazhkina, Maria, Kryukov, Ruslan, Zubkov, Sergey, Sushkov, Artem, Pavlov, Dmitry, Tikhov, Stanislav, Morozov, Oleg, Tetelbaum, David

“…Variability of resistive switching is a key problem for application of memristive devices in emerging information‐computing systems. Achieving a stable…”
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Effect of Training Pulse Parameters on the Synaptic Plasticity of a ZrO 2 (Y)‐Based Memristive Device by Koryazhkina, Maria N., Ryabova, Margarita A., Okulich, Evgeniya V., Belov, Alexey I., Antonov, Ivan N., Shenina, Maria E., Shchanikov, Sergey A., Mikhaylov, Alexey N., Filatov, Dmitrii O., Valenti, Davide, Spagnolo, Bernardo

“…Herein, the effect of training pulse parameters on the synaptic plasticity of a ZrO 2 (Y)‐based memristive device has been investigated. It is shown that the…”
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Neuromorphic Computing Based on CMOS-Integrated Memristive Arrays: Current State and Perspectives

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Electrical Characteristics of CMOS-Compatible SiO x -Based Resistive-Switching Devices by Koryazhkina, Maria N, Filatov, Dmitry O, Tikhov, Stanislav V, Belov, Alexey I, Serov, Dmitry A, Kryukov, Ruslan N, Zubkov, Sergey Yu, Vorontsov, Vladislav A, Pavlov, Dmitry A, Gryaznov, Evgeny G, Orlova, Elena S, Shchanikov, Sergey A, Mikhaylov, Alexey N, Kim, Sungjun

“…The electrical characteristics and resistive switching properties of memristive devices have been studied in a wide temperature range. The insulator and…”
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Electrical Characteristics of CMOS-Compatible SiOIx/I-Based Resistive-Switching Devices by Koryazhkina, Maria N, Filatov, Dmitry O, Tikhov, Stanislav V, Belov, Alexey I, Serov, Dmitry A, Kryukov, Ruslan N, Zubkov, Sergey Yu, Vorontsov, Vladislav A, Pavlov, Dmitry A, Gryaznov, Evgeny G, Orlova, Elena S, Shchanikov, Sergey A, Mikhaylov, Alexey N, Kim, Sungjun

“…The electrical characteristics and resistive switching properties of memristive devices have been studied in a wide temperature range. The insulator and…”
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Fabrication of Metal Nanoparticle Arrays in the ZrO 2 (Y), HfO 2 (Y), and GeO x Films by Magnetron Sputtering by Gorshkov, Oleg, Antonov, Ivan, Filatov, Dmitry, Shenina, Maria, Kasatkin, Alexander, Bobrov, Alexander, Koryazhkina, Maria, Korotaeva, Irina, Kudryashov, Mikhail

“…The single sheet arrays of Au nanoparticles (NPs) embedded into the ZrO 2 (Y), HfO 2 (Y), and GeO x ( x ≈ 2 ) films have been fabricated by the alternating…”
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Response of ZrO2(Y)-Based Memristive Crossbar to in Vitro Neuronal Activity of the Hippocampus by Koryazhkina, Maria, Lebedeva, Albina, Antonov, Ivan, Belytyukova, Anna, Pakhomova, Darina, Belov, Alexey, Budylina, Elena, Mikhaylov, Alexey

“…The influence of the neuronal activity amplitude on the response of a ZrO 2 (Y)-based memristive crossbar and its resistive state was studied. Neuronal…”
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Pulse duration effect on synaptic plasticity of ZrO2(Y)-based memristive device by Koryazhkina, Maria, Okulich, Evgeniya, Antonov, Ivan, Mikhaylov, Alexey, Filatov, Dmitrii, Gorshkov, Oleg, Valenti, Davide, Spagnolo, Bernardo

“…This report presents a method for controlling the synaptic plasticity of memristive devices based on changing not only the amplitude of control pulses, but…”
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Variability in Resistive Memories by Roldán, Juan B, Miranda, Enrique, Maldonado, David, Mikhaylov, Alexey N, Agudov, Nikolay V, Dubkov, Alexander A, Koryazhkina, Maria N, González, Mireia B, Villena, Marco A, Poblador, Samuel, Saludes-Tapia, Mercedes, Picos, Rodrigo, Jiménez-Molinos, Francisco, Stavrinides, Stavros G, Salvador, Emili, Alonso, Francisco J, Campabadal, Francesca, Spagnolo, Bernardo, Lanza, Mario, Chua, Leon O

“…Advanced Intelligent systems, 2200338, 46 pages, 2023 Resistive memories are outstanding electron devices that have displayed a large potential in a plethora…”
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Effect of pulse amplitude on depression and potentiation of ZrO2(Y)-based memristive synaptic device by Koryazhkina, Maria, Okulich, Evgeniya, Ryabova, Margarita, Belov, Alexey, Antonov, Ivan, Kotomina, Valentina, Shchanikov, Sergey, Mikhaylov, Alexey, Filatov, Dmitrii, Carollo, Angelo, Valenti, Davide, Spagnolo, Bernardo

“…The effect of the amplitude of depressing and potentiating pulses on the synaptic plasticity (potentiation and depression) of a memristive device based on the…”
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