Search Results - "Korostelin, Yu.V."

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  1. 1

    Room temperature Ce-doped chalcogenide glass laser by Leonov, S.O., Frolov, M.P., Korostelin, Yu.V., Fjodorow, P., Skasyrsky, Ya.K., Sverchkov, S.E., Denker, B.I., Galagan, B.I., Koltashev, V.V., Sukhanov, M.V., Velmuzhov, A.P., Plotnichenko, V.G., Kozlovsky, V.I.

    “…In this work, we demonstrate a Ce-doped chalco-genide glass laser pumped by a Fe:ZnSe pulsed laser at room tem-perature. The laser performance of the Ce-doped…”
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    Conference Proceeding
  2. 2

    MBE growth and characterization of ZnTe epilayers and ZnCdTe/ZnTe structures on GaAs(1 0 0) and ZnTe(1 0 0) substrates by Kozlovsky, V.I, Krysa, A.B, Korostelin, Yu.V, Sadofyev, Yu.G

    Published in Journal of crystal growth (01-06-2000)
    “…Deposition of an amorphous ZnTe seed layer with a thickness of 10 nm followed by its solid-phase crystallization was done before the beginning of molecular…”
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    Journal Article
  3. 3

    Sensitization of 5–6 μm Nd3+ luminescence in selenide glass by Tb3+ ions by Denker, B.I., Frolov, M.P., Galagan, B.I., Koltashev, V.V., Korostelin, Yu.V., Plotnichenko, V.G., Sukhanov, M.V., Sverchkov, S.E., Velmuzhov, A.P.

    Published in Journal of luminescence (01-11-2023)
    “…This investigation proposes Tb3+ ions as efficient sensitizers of 5–6 μm Nd3+ emission in selenide glasses. Tb3+ ions can be pumped by 2.9 μm Er:YAG as well as…”
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    Journal Article
  4. 4

    Paramagnetic defects in ZnSe crystals doped with iron ions by Vazhenin, V. A., Potapov, A. P., Shakurov, G. S., Fokin, A. V., Artyomov, M. Yu, Kozlovskii, V. I., Korostelin, Yu. V., Pytalev, D. S.

    Published in Physics of the solid state (01-10-2017)
    “…The electron paramagnetic resonance (EPR) spectra of iron-doped ZnSe single crystals were studied. In addition to cubic Fe 3+ and Mn 2+ centers and also Fe 2+…”
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    Journal Article
  5. 5

    Vapour growth of II–VI solid solution single crystals by contact-free technique by Korostelin, Yu.V, Kozlovsky, V.I

    Published in Journal of alloys and compounds (26-05-2004)
    “…A modified vapour phase contact-free method to grow homogeneous single crystals of solid solutions (SS) of II–VI compounds is presented. Single crystals of…”
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    Journal Article
  6. 6

    Characterization of II–VI: 3d crystals with the help of ultrasonic technique by Gudkov, V.V., Lonchakov, A.T., Zhevstovskikh, I.V., Sokolov, V.I., Korostelin, Yu.V., Landman, A.I., Surikov, V.T.

    Published in Physica. B, Condensed matter (15-12-2009)
    “…The temperature dependence of ultrasonic attenuation is proposed to use for determining concentration of dopand in a diluted magnetic semiconductor. This…”
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    Journal Article
  7. 7

    Efficient gain-switched operation around 3 μm in Cr2+:CdSe single-crystal laser pumped by repetitivelypulsed Ho3+:YAG lasers by Antipov, O.L., Eranov, I.D., Frolov, M.P., Kalyanov, D.O., Korostelin, Yu.V., Kozlovsky, V.I., Skasyrsky, Ya.K.

    “…Efficient gain-switched output at 3.12 μm was achieved from the Cr 2+ :CdSe laser pumped at 2.1 μm by the repetitively-pulsed Ho 3+ :YAG laser. Two lasing…”
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    Conference Proceeding
  8. 8

    Vapour Growth of ZnSxSe1-x Single Crystals by Korostelin, Yu.V., Kozlovsky, V.I.

    Published in physica status solidi (b) (01-01-2002)
    “…Seeded chemical and physical vapour transport with H2 and He, respectively, was used to grow twin‐free ZnSxSe1—x (x < 0.15) single crystals with diameter of…”
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    Journal Article
  9. 9

    Excitation intensity dependence of up-converted emission in ZnSe–ZnTe superlattice grown by MBE by Ohashi, M., Ichinohe, Y., Shigaura, G., Sasaki, Y., Chikarayumi, Y., Kimura, Na, Kimura, No, Sawada, T., Suzuki, K., Imai, K., Saito, H., Trubenko, P.A., Korostelin, Yu.V.

    Published in Journal of crystal growth (01-05-2005)
    “…The photoluminescence (PL) spectra of the type II ZnSe–ZnTe superlattices with dual-subband structures have two emission peaks. The PL peak at the higher…”
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    Journal Article
  10. 10

    Vapour growth and doping of ZnSe single crystals by Korostelin, Yu.V, Kozlovsky, V.I, Nasibov, A.S, Shapkin, P.V

    Published in Journal of crystal growth (01-02-1999)
    “…The results of seeded vapour-phase free growth of ZnSe single crystals in both the 〈1 1 1〉 and 〈1 0 0〉 directions are presented and discussed. Optimum growth…”
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    Journal Article
  11. 11

    Seeded-vapour-phase free growth and characterization of ZnTe single crystals by Korostelin, Yu.V, Kozlovsky, V.I, Shapkin, P.V

    Published in Journal of crystal growth (01-06-2000)
    “…A seeded-vapour-phase free growth (SVPFG) technique for obtaining large (40–50 mm in diameter) substrate-quality ZnTe single crystals is described. To provide…”
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    Journal Article
  12. 12

    Vapour growth and characterization of bulk ZnSe single crystals by Korostelin, Yu.V., Kozlovsky, V.I., Nasibov, A.S., Shapkin, P.V.

    Published in Journal of crystal growth (01-04-1996)
    “…Large (up to 60 mm in diameter) untwinned ZnSe single crystals have been grown in sealed quartz ampoules by seeded physical vapour transport and seeded…”
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    Journal Article
  13. 13

    Vapour growth of II–VI solid solution single crystals by Korostelin, Yu.V., Kozlovsky, V.I., Nasibov, A.S., Shapkin, P.V.

    Published in Journal of crystal growth (01-02-1996)
    “…A modified vapour phase free growth method for obtaining homogeneous single crystals of solid solutions of II–VI compounds having essentially different…”
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    Journal Article
  14. 14

    MOCVD Growth of ZnSe/ZnS Distributed Bragg Reflectors on ZnSe(100) and GaAs(100) Substrates by Kuznetsov, P.I., Jitov, V.A., Zakharov, L.Yu, Yakushcheva, G.G., Korostelin, Yu.V., Kozlovsky, V.I.

    Published in physica status solidi (b) (01-01-2002)
    “…The possibility to increase the reflectivity of ZnS/ZnSe distributed Bragg reflectors (DBR) grown on GaAs(100) and ZnSe(100) substrates was studied by using…”
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    Journal Article
  15. 15

    Seeded vapour-phase free growth of ZnSe single crystals in the 〈1 0 0〉 direction by Korostelin, Yu.V., Kozlovsky, V.I., Nasibov, A.S., Shapkin, P.V., Lee, S.K., Park, S.S., Han, J.Y., Lee, S.H.

    Published in Journal of crystal growth (1998)
    “…Seeded vapour-phase free growth of ZnSe single crystals at T g = 1100–1250°C in 〈1 0 0〉 direction was studied. The 〈1 0 0〉 growth process was found to be more…”
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    Journal Article
  16. 16

    E-Beam Longitudinally Pumped Laser Based on ZnCdSe/ZnSe MQW Structure Grown by MBE on ZnSe(001) Substrate by Kozlovsky, V.I., Korostelin, Yu.V., Popov, Yu.M., Skasyrsky, Ya.K., Sadofyev, Yu.G.

    Published in physica status solidi (b) (01-01-2002)
    “…Electron beam longitudinally pumped laser based on 15 ZnCdSe/ZnSe QW periodic‐gain structure grown by molecular beam epitaxy on ZnSe(001) substrate was…”
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    Journal Article
  17. 17

    ZnSe/ZnMgSSe structures on ZnSSe substrates by Krysa, A.B, Korostelin, Yu.V, Kozlovsky, V.I, Shapkin, P.V, Kalisch, H, Rüland, R, Heuken, M, Heime, K

    Published in Journal of crystal growth (01-06-2000)
    “…ZnS x Se 1− x ( x=0.08–0.12) substrates transparent for ZnSe QW emissions were used for the growth of ZnSe/ZnMgSSe structures. The FWHM of X-ray rocking curves…”
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    Journal Article
  18. 18

    Vapour phase and liquid phase doping of ZnSe by group III elements by Georgobiani, A.N., Aminov, U.A., Korostelin, Yu.V., Kozlovsky, V.I., Nasibov, A.S., Shapkin, P.V.

    Published in Journal of crystal growth (01-02-1998)
    “…A vapour phase doping of ZnSe single crystals by In impurity during a growth process at T = 1180°C was developed. A liquid phase doping was performed by means…”
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    Journal Article
  19. 19

    ZnSe/ZnMgSSe QW Structures grown by MOVPE on ZnSe(1 0 0), ZnSe(5 1 1) and GaAs(1 0 0) substrates by Kozlovsky, V.I., Krysa, A.B., Korostelin, Yu.V., Shapkin, P.V., Kalisch, H., Luenenbuerger, M., Heuken, M.

    Published in Journal of crystal growth (01-02-1998)
    “…Both ZnMgSSe epilayers and ZnSe/ZnMgSSe QW structures with mirror-like surfaces were grown on ZnSe(1 0 0), ZnSe(5 1 1) and GaAs(1 0 0) by LP-MOVPE using DTBSe,…”
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    Journal Article
  20. 20

    ZnSe/ZnMgSSe QW structures grown by MOVPE on transparent ZnSSe substrates by Krysa, A.B., Korostelin, Yu.V., Kozlovsky, V.I., Shapkin, P.V., Kalisch, H., Rüland, R., Heuken, M., Heime, K.

    Published in Microelectronic engineering (2000)
    “…ZnSSe substrates transparent for ZnSe QW emissions were used for the growth of ZnSe/ZnMgSSe structures. The FWHM of X-ray rocking curve of a substrate with a…”
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    Journal Article