Search Results - "Korolev, D.S"

Stochastic resonance in a metal-oxide memristive device by Mikhaylov, A.N., Guseinov, D.V., Belov, A.I., Korolev, D.S., Shishmakova, V.A., Koryazhkina, M.N., Filatov, D.O., Gorshkov, O.N., Maldonado, D., Alonso, F.J., Roldán, J.B., Krichigin, A.V., Agudov, N.V., Dubkov, A.A., Carollo, A., Spagnolo, B.

“…The stochastic resonance phenomenon has been studied experimentally and theoretically for a state-of-art metal-oxide memristive device based on…”
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Yttria-stabilized zirconia cross-point memristive devices for neuromorphic applications by Emelyanov, A.V., Nikiruy, K.E., Demin, V.A., Rylkov, V.V., Belov, A.I., Korolev, D.S., Gryaznov, E.G., Pavlov, D.A., Gorshkov, O.N., Mikhaylov, A.N., Dimitrakis, P.

“…An array of cross-point memristive devices has been implemented on the basis of yttria-stabilized zirconia thin film for applications in prototypes of spiking…”
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Photoluminescent properties of the SiO2/Si system with ion-synthesized hexagonal silicon of the 9R-Si phase: Effect of post-implantation annealing by Nikolskaya, A.A., Korolev, D.S., Trushin, V.N., Yunin, P.A., Mikhaylov, A.N., Belov, A.I., Konakov, A.A., Okulich, E.V., Pavlov, D.A., Tetelbaum, D.I.

“…The properties of semiconductors are highly dependent on their crystalline structure. The formation of metastable polytypes under the action of external…”
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Structural disorder and distribution of impurity atoms in β-Ga2O3 under boron ion implantation by Nikolskaya, A.A., Korolev, D.S., Trushin, V.N., Drozdov, M.N., Yunin, P.A., Pitirimova, E.A., Kudrin, A.V., Okulich, E.V., Okulich, V.I., Mikhaylov, A.N., Tetelbaum, D.I.

“…Gallium oxide (Ga2O3) has recently attracted much attention due to the prospect of its application in power electronics and in other areas. An important task…”
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Photoluminescence of silicon at 1235 nm produced by irradiation of SiO2/Si with Kr+ ions and subsequent high-temperature annealing by Nikolskaya, A.A., Korolev, D.S., Mikhaylov, A.N., Konakov, A.A., Belov, A.I., Marychev, M.O., Murtazin, R.I., Pavlov, D.A., Tetelbaum, D.I.

“…The search of ways to improve light-emitting properties of silicon is of great importance for modern optoelectronics. In this work, the photoluminescence (PL)…”
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Role of highly doped Si substrate in bipolar resistive switching of silicon nitride MIS-capacitors by Tikhov, S.V., Mikhaylov, A.N., Belov, A.I., Korolev, D.S., Antonov, I.N., Karzanov, V.V., Gorshkov, O.N., Tetelbaum, D.I., Karakolis, P., Dimitrakis, P.

“…Bipolar resistive switching of the metal-insulator-semiconductor (MIS) capacitor-like structures with the inert Au top electrode and Si3N4 dielectric nanolayer…”
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Effect of Boron Impurity on the Light-Emitting Properties of Dislocation Structures Formed in Silicon by [Si.sup.+] Ion Implantation by Tereshchenko, A.N, Korolev, D.S, Mikhaylov, A.N, Belov, A.I, Nikolskaya, A.A, Pavlov, D.A, Tetelbaum, D.I, Steinman, E.A

“…The effect of boron implantation on the light-emitting properties of dislocation structures formed in silicon by [Si.sup.+] ion implantation with subsequent…”
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Resistive switching and impedance spectroscopy in SiO -based metal-oxide-metal trilayers down to helium temperatures by Rosário, C.M.M., Gorshkov, O.N., Kasatkin, A.P., Antonov, I.N., Korolev, D.S., Mikhaylov, A.N., Sobolev, N.A.

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QuEChERS sample preparation in the simultaneous determination of diethylstilbestrol and ractopamine in food by gas-liquid chromatography by Amelin, V. G., Korolev, D. S., Tret’yakov, A. V.

“…A simple and rapid method has been proposed for the determination of 1–25 μg/kg of diethylstilbestrol and β-adrenostimulator ractopamine in food by gas-liquid…”
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Simulation of synaptic coupling of neuron-like generators via a memristive device by Gerasimova, S. A., Mikhaylov, A. N., Belov, A. I., Korolev, D. S., Gorshkov, O. N., Kazantsev, V. B.

“…A physical model of synaptically coupled neuron-like generators interacting via a memristive device has been presented. The model simulates the synaptic…”
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Change of immitance during electroforming and resistive switching in the metal--insulator--metal memristive structures based on Si[O.sub.x] by Tikhov, S.V, Gorshkov, O.N, Antonov, I.N, Kasatkin, A.P, Korolev, D.S, Belov, A.I, Mikhaylov, A.N, Tetelbaum, D.I

“…The change of the immitance of the metal-insulator-metal memristive structures based on Si[O.sub.x], which is observed during electroforming and resistive…”
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Resistive switching and impedance spectroscopy in SiOx-based metal-oxide-metal trilayers down to helium temperatures by Rosário, C.M.M., Gorshkov, O.N., Kasatkin, A.P., Antonov, I.N., Korolev, D.S., Mikhaylov, A.N., Sobolev, N.A.

“…In this work, Au/SiOx/TiN layered structures, obtained by magnetron sputtering deposition of silicon oxide (SiOx), are studied by means of I–V characteristics…”
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Layer-by-layer composition and structure of silicon subjected to combined gallium and nitrogen ion implantation for the ion synthesis of gallium nitride by Korolev, D. S., Mikhaylov, A. N., Belov, A. I., Vasiliev, V. K., Guseinov, D. V., Okulich, E. V., Shemukhin, A. A., Surodin, S. I., Nikolitchev, D. E., Nezhdanov, A. V., Pirogov, A. V., Pavlov, D. A., Tetelbaum, D. I.

“…The composition and structure of silicon surface layers subjected to combined gallium and nitrogen ion implantation with subsequent annealing have been studied…”
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Effect of ion doping on the dislocation-related photoluminescence in [Si.sup.+]-implanted silicon by Mikhaylov, A.N, Belov, A.I, Korolev, D.S, Timofeeva, A.O, Vasiliev, V.K, Shushunov, A.N, Bobrov, A.I, Pavlov, D.A, Tetelbaum, D.I, Shek, E.I

“…The study is concerned with the effect of the additional implantation of Si samples with [C.sup.+], [O.sup.+], [B.sup.+], [P.sup.+], and [Ge.sup.+] impurity…”
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Solid-phase fluorescence determination of gallium(III) with morin and lumogallion immobilized on cellulose matrices by Abramenkova, O. I., Amelin, V. G., Aleshin, N. S., Korolev, D. S.

“…It has been demonstrated that the fluorometric test determination of gallium(III) can be performed with morin and lumogallion immobilized on thin-layer…”
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Effect of ion irradiation on the structure and luminescence characteristics of porous silicon impregnated with tungsten-telluride glass doped by Er and Yb impurities by Demidov, E. S., Karzanova, M. V., Mikhaylov, A. N., Tetelbaum, D. I., Belov, A. I., Korolev, D. S., Pavlov, D. A., Bobrov, A. I., Gorshkov, O. N., Demidova, N. E., Chigirinskii, Yu. I.

“…Using transmission electron microscopy and elemental analysis, it has been shown that tungsten telluride glass (TTG) containing erbium and ytterbium as…”
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Peculiarities of the formation and properties of light-emitting structures based on ion-synthesized silicon nanocrystals in Si[O.sub.2] and [Al.sub.2][O.sub.3] matrices by Mikhaylov, A.N, Belov, A.I, Kostyuk, A.B, Zhavoronkov, I. Yu, Korolev, D.S, Nezhdanov, A.V, Ershov, A.V, Guseinov, D.V, Gracheva, T.A, Malygin, N.D, Demidov, E.S, Tetelbaum, D.I

“…A comprehensive comparative study of Si[O.sub.2] and [Al.sub.2][O.sub.3] oxide layers with Si nanocrystals formed by [Si.sup.+] ion implantation and…”
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Influence of the ion synthesis and ion doping regimes on the effect of sensitization of erbium emission by silicon nanoclusters in silicon dioxide films by Korolev, D. S., Kostyuk, A. B., Belov, A. I., Mikhaylov, A. N., Dudin, Yu. A., Bobrov, A. I., Malekhonova, N. V., Pavlov, D. A., Tetelbaum, D. I.

“…The photoluminescence spectra of erbium centers in SiO 2 films with ion-synthesized silicon nanoclusters under nonresonant excitation were investigated. Erbium…”
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Ion-beam simulation of radiation damage produced by fast neutrons in heterophase structures by Tetelbaum, D.I., Guseinov, D.V., Vasiliev, V.K., Mikhaylov, A.N., Belov, A.I., Korolev, D.S., Obolensky, S.V., Kachemtsev, A.N.

“…3D Monte-Carlo algorithm and computer code have been developed that allows choosing and optimizing the conditions of ion irradiation needed for the adequate…”
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Manipulation of resistive state of silicon oxide memristor by means of current limitation during electroforming by Korolev, D.S., Belov, A.I., Okulich, E.V., Okulich, V.I., Guseinov, D.V., Sidorenko, K.V., Shuisky, R.A., Antonov, I.N., Gryaznov, E.G., Gorshkov, O.N., Tetelbaum, D.I., Mikhaylov, A.N.

“…Resistive switching and adaptive behavior of resistive state in response to electrical stimulation has been studied for the silicon oxide based memristive…”
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