Search Results - "Kornblit, A."

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  1. 1

    Negative Differential Resistance: Gate Controlled and Photoconductance Enhancement in Carbon Nanotube Intraconnects by Lee, S. W, Kornblit, A, Lopez, D, Rotkin, S. V, Sirenko, A. A, Grebel, H

    Published in Nano letters (08-04-2009)
    “…Intraconnects, as-grown single-walled carbon nanotubes bridging two metal electrodes, were investigated as gated structures. We show that even with a seemingly…”
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    Journal Article
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    Clinical and molecular heterogeneity in the Brugada syndrome: A novel gene locus on chromosome 3 by WEISS, Raul, BARMADA, M. Michael, NGUYEN, Tuduy, SEIBEL, Jolene S, CAVLOVICH, Doris, KORNBLIT, Cari A, ANGELILLI, Adam, VILLANUEVA, Flordeliza, MCNAMARA, Dennis M, LONDON, Barry

    Published in Circulation (New York, N.Y.) (12-02-2002)
    “…Brugada syndrome is a form of idiopathic ventricular fibrillation characterized by a right bundle-branch block pattern and ST elevation (STE) in the right…”
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    Journal Article
  3. 3

    Etching of high- k dielectric Zr1−xAlxOy films in chlorine-containing plasmas by Pelhos, K., Donnelly, V. M., Kornblit, A., Green, M. L., Van Dover, R. B., Manchanda, L., Hu, Y., Morris, M., Bower, E.

    “…As new, advanced high-k dielectrics are being developed to replace SiO2 in future generations of microelectronics devices, understanding their etch…”
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    Journal Article
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    Determination of electron temperature, atomic fluorine concentration, and gas temperature in inductively coupled fluorocarbon/rare gas plasmas using optical emission spectroscopy by Schabel, M. J., Donnelly, V. M., Kornblit, A., Tai, W. W.

    “…Recent advances in the interpretation of optical emission spectra from plasmas have made it possible to measure parameters such as electron temperature (T e ),…”
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    Domestic violence--an emerging health issue by Kornblit, A L

    Published in Social science & medicine (1982) (01-11-1994)
    “…The aim of this paper is to explain some of the aspects included in the concept of family violence, to summarize the principal theoretical models proposed to…”
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    Journal Article
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    Flexible fabrication of large pixel count piston-tip-tilt mirror arrays for fast spatial light modulators by Pardo, Flavio, Cirelli, R.A., Ferry, E.J., Lai, W.Y.-C., Klemens, F.P., Miner, J.F., Pai, C.S., Bower, J.E., Mansfield, W.M., Kornblit, A., Sorsch, T.W., Taylor, J.A., Baker, M.R., Fullowan, R., Simon, M.E., Aksyuk, V.A., Ryf, R., Dyson, H., Arney, S.

    Published in Microelectronic engineering (01-05-2007)
    “…We present arrays of electrostatically actuated piston-tip-tilt micromirrors realized using a surface micromachining 3-structural-layer polysilicon process…”
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    Journal Article Conference Proceeding
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    The vertical replacement-gate (VRG) MOSFET by Hergenrother, J.M., Oh, Sang-Hyun, Nigam, T., Monroe, D., Klemens, F.P., Kornblit, A.

    Published in Solid-state electronics (01-07-2002)
    “…We have fabricated and demonstrated a new device called the vertical replacement-gate (VRG) MOSFET. This is the first MOSFET ever built in which: (1) all…”
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    Effects of plasma conditions on the shapes of features etched in Cl 2 and HBr plasmas. I. Bulk crystalline silicon etching by Vyvoda, M. A., Lee, H., Malyshev, M. V., Klemens, F. P., Cerullo, M., Donnelly, V. M., Graves, D. B., Kornblit, A., Lee, J. T. C.

    “…We have studied the effects of source and bias powers, pressure, and feed gas composition on the shapes of SiO 2 -masked crystalline silicon features etched in…”
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    Effects of plasma conditions on the shapes of features etched in Cl2 and HBr plasmas. I. Bulk crystalline silicon etching by Vyvoda, M. A., Lee, H., Malyshev, M. V., Klemens, F. P., Cerullo, M., Donnelly, V. M., Graves, D. B., Kornblit, A., Lee, J. T. C.

    “…We have studied the effects of source and bias powers, pressure, and feed gas composition on the shapes of SiO2-masked crystalline silicon features etched in a…”
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    Journal Article
  12. 12

    Langmuir probe studies of a transformer-coupled plasma, aluminum etcher by Malyshev, M. V., Donnelly, V. M., Kornblit, A., Ciampa, N. A., Colonell, J. I., Lee, J. T. C.

    “…Spatially resolved positive ion densities (n i + ), electron densities (n e ), electron temperatures (T e ), plasma potentials (V p ), and floating potentials…”
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    The relentless march of the MOSFET gate oxide thickness to zero by Timp, G, Bude, J, Baumann, F, Bourdelle, K.K, Boone, T, Garno, J, Ghetti, A, Green, M, Gossmann, H, Kim, Y, Kleiman, R, Kornblit, A, Klemens, F, Moccio, S, Muller, D, Rosamilia, J, Silverman, P, Sorsch, T, Timp, W, Tennant, D, Tung, R, Weir, B

    Published in Microelectronics and reliability (01-04-2000)
    “…The narrowest feature of an integrated circuit is the silicon dioxide gate dielectric (3–5 nm). The viability of future CMOS technology is contingent upon…”
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    Progress toward a 30 nm silicon metal–oxide–semiconductor gate technology by Tennant, D. M., Timp, G. L., Ocola, L. E., Green, M., Sorsch, T., Kornblit, A., Klemens, F., Kleiman, R., Kim, Y., Timp, W.

    “…We report on progress toward scaling both N-metal–oxide–semiconductor (MOS) and P-metal–oxide–semiconductor MOS transistors to a gate length of 30 nm. We…”
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    Conference Proceeding
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    Marks for SCALPEL ® tool optics optimization by Farrow, R.C., Gallatin, G.M., Waskiewicz, W.K., Liddle, J.A., Kizilyalli, I., Kornblit, A., Biddick, C., Blakey, M., Klemens, F., Felker, J., Kraus, J., Mkrtchyan, M., Orphanos, P.A., Layadi, N., Merchant, S.

    Published in Microelectronic engineering (01-06-2000)
    “…A method for optimizing the electron optics of the SCALPEL exposure tool is described. The method uses the SCALPEL mark detection method with a grating mark as…”
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    Journal Article Conference Proceeding
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    CMOS compatible alignment marks for the SCALPEL proof of lithography tool by Farrow, R.C., Waskiewicz, W.K., Kizilyalli, I., Ocola, L., Felker, J., Biddick, C., Gallatin, G., Mkrtchyan, M., Blakey, M., Kraus, J., Novembre, A., Orphanos, P., Peabody, M., Kasica, R., Kornblit, A., Klemens, F.

    Published in Microelectronic engineering (01-05-1999)
    “…SCALPEL alignment marks have been fabricated in a SiO 2/WSi 2 structure using SCALPEL lithography and plasma processing. The positions of the marks were…”
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    Journal Article Conference Proceeding
  17. 17

    Inverted thin-film transistors with a simple self-aligned lightly doped drain structure by Liu, C.-T., Yu, C.-H.D., Kornblit, A., Lee, K.-H.

    Published in IEEE transactions on electron devices (01-12-1992)
    “…The I-V characteristics of inverted thin-film transistors (TFT) are studied. A simple lightly doped drain (LDD) structure is utilized to control the channel…”
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    Sub-0.1 μm NMOS transistors fabricated using laser-plasma point-source X-ray lithography by Rittenhouse, C.E., Mansfield, W.M., Kornblit, A., Cirelli, R.A., Tomes, D., Celler, G.K.

    Published in IEEE electron device letters (01-07-1995)
    “…We report the experimental results of the first MOSFET's ever fabricated using a laser plasma-source X-ray stepper. The minimum gate length of these…”
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    Electrical and optical properties of carbon nanotube/polypyrrole addressable intra-connects by Lee, Seon Woo, Grebel, Haim, Kornblit, Avi, Lopez, Daniel

    Published in Synthetic metals (01-03-2009)
    “…Carbon nanotube (CNT) intra-connects (bridges spanning across in-plane electrodes) were electroplated with polypyrrole (PPy), an electrically conductive…”
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