Search Results - "Kopsalis, Ioannis"

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    Design and First Tests of a Radiation-Hard Pixel Sensor for the European X-Ray Free-Electron Laser by Schwandt, Joern, Fretwurst, Eckhart, Klanner, Robert, Kopsalis, Ioannis, Jiaguo Zhang

    Published in IEEE transactions on nuclear science (01-08-2014)
    “…The high intensity and high repetition rate of the European X-ray Free-Electron Laser, presently under construction in Hamburg, requires silicon sensors which…”
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    Journal Article
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    Design and First Tests of a Radiation-Hard Pixel Sensor for the European X-Ray Free-Electron Laser by Schwandt, Joern, Fretwurst, Eckhart, Klanner, Robert, Kopsalis, Ioannis, Zhang, Jiaguo

    Published 13-02-2014
    “…The high intensity and high repetition rate of the European X-ray Free-Electron Laser, presently under construction in Hamburg, requires silicon sensors which…”
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    Journal Article
  6. 6

    Design and first tests of a radiation-hard pixel sensor for the European X-ray Free-Electron Laser by Schwandt, Joern, Fretwurst, Eckhart, Klanner, Robert, Kopsalis, Ioannis, Jiaguo Zhang

    “…The high intensity and high repetition rate of the European X-ray Free-Electron Laser, presently under construction in Hamburg, requires silicon sensors which…”
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    Conference Proceeding
  7. 7

    Study of X-ray radiation damage in the AGIPD sensor for the European XFEL by Zhang, Jiaguo, Fretwurst, Eckhart, Graafsma, Heinz, Klanner, Robert, Kopsalis, Ioannis, Schwandt, Joern

    Published 13-12-2013
    “…The European X-ray Free Electron Laser (XFEL), currently being constructed in Hamburg and planning to be operational in 2017 for users, will deliver 27,000…”
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    Journal Article
  8. 8

    Investigation of the insulator layers for segmented silicon sensors before and after X-ray irradiation by Brueske, Dominik, Garutti, Erika, Klanner, Robert, Kopsalis, Ioannis, Schwandt, Joern, Khai Ton That, Jiaguo Zhang

    “…For the proper simulation and understanding of segmented silicon sensors the surface boundary conditions and the charge density distribution in the SiO 2 layer…”
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    Conference Proceeding