Search Results - "Kong Boon Yeap"

A Realistic Method for Time-Dependent Dielectric Breakdown Reliability Analysis for Advanced Technology Node by Kong Boon Yeap, Fen Chen, Yao, Huade Walter, Tian Shen, Sing Fui Yap, Justison, Patrick

“…This paper proposes a methodology to determine a realistic time-dependent dielectric breakdown failure rate. The in-die constant voltage stress was performed…”
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Residual stress measurement in thin films at sub-micron scale using Focused Ion Beam milling and imaging by Song, Xu, Yeap, Kong Boon, Zhu, Jing, Belnoue, Jonathan, Sebastiani, Marco, Bemporad, Edoardo, Zeng, Kaiyang, Korsunsky, Alexander M.

“…Residual stress evaluation in thin films at the sub-micron scale was achieved in the present study using a semi-destructive trench-cutting (ring-core) method…”
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Nanomechanical characterization of sputtered RuO2 thin film on silicon substrate for solid state electronic devices by Zhu, Jing, Yeap, Kong Boon, Zeng, Kaiyang, Lu, Li

“…This paper presents the study on characterizing the mechanical and interfacial properties of ruthenium dioxide (RuO2) film on silicon substrate using…”
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Elastic anisotropy of Cu and its impact on stress management for 3D IC: Nanoindentation and TCAD simulation study by Yeap, Kong Boon, Zschech, Ehrenfried, Hangen, Ude D., Wyrobek, Thomas, Kong, Lay Wai, Karmakar, Aditya, Xu, Xiaopeng, Panchenko, Iuliana

“…This article presents a study on elastic anisotropy of Cu by indentations at different penetration depth ranges (sub-10 nm, several-10 nm, and several-100 nm),…”
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Field acceleration factor extraction in MOL and BEOL TDDB by Tian Shen, Kong Boon Yeap, Christiansen, Cathryn, Justison, Patrick

“…Recently a BEOL (Back End Of Line) and MOL (Middle Of Line) Time-dependent dielectric breakdown (TDDB) reliability test and fail rate projection methodology…”
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The effect of the pore topology on the elastic modulus of organosilicate glasses by Yeap, Kong-Boon, Kopycinska-Mueller, Malgorzata, Chen, Lei, Chen, Yu, Jungmann, Marco, Krause-Rehberg, Reinhard, Mahajan, Sukesh, Vlassak, Joost, Gall, Martin, Zschech, Ehrenfried

“…Optimization of the pore topology in organosilicate glass (OSG) is crucial in the development of dielectrics with an extremely low k-value and a relatively…”
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Determining the interfacial toughness of low- k films on Si substrate by wedge indentation: Further studies by Yeap, Kong Boon, Zeng, Kaiyang, Chi, Dongzhi

“…This paper presents further studies to determine the interface toughness of low- k films (black diamond (BD) film) using wedge indentation experiments and…”
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Impact of TSV process on 14nm FEOL and BEOL reliability by Kannan, Sukeshwar, Premachandran, C. S., Smith, Daniel, Ranjan, Rakesh, Cimino, Salvatore, Kong Boon Yeap, Wu, George, Linjun Cao, Prabhu, Manjunatha, Agarwal, Rahul, Yao, Walter, England, Luke, Justison, Patrick

“…This paper presents the impact of Through Silicon Via (TSV) process on wafer level reliability with respect to front-end of line (FEOL) and back-end of line…”
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Nanometer deformation of elastically anisotropic materials studied by nanoindentation by Yeap, Kong Boon, Kopycinska-Müller, Malgorzata, Hangen, Ude D., Zambaldi, Claudio, Hübner, René, Niese, Sven, Zschech, Ehrenfried

“…The reduced modulus, E R , of elastically anisotropic materials (Si, CaF 2 and MgF 2 ) was determined for sub-10 nm, several-10 nm and several-100 nm…”
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Optimizing Cu barrier thickness for interconnects performance, reliability and yield by Tian Shen, Rajagopalan, Balajee, Silvestre, Mary Claire, Ramanathan, Eswar, Mahalingam, Anbu Selvam K. M., Wenyi Zhang, Kong Boon Yeap, Justison, Patrick

“…Cu barrier thickness optimization on our 90nm pitch Vx/Mx layers with porous ULK SiCOH (κ=2.55) was systematically investigated. Both via resistance and…”
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Wedge indentation studies of low- k films at inert, water and ambient environments by Yeap, Kong Boon, Zeng, Kaiyang, Chi, Dongzhi

“…Wedge indentation experiments are performed to study the time-dependent fracture behavior of silica-based low- k films, namely BlackDiamond ® (BD) film and…”
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Impact of electrode surface modulation on time-dependent dielectric breakdown by Kong Boon Yeap, Tian Shen, Zhang, Galor Wenyi, Sing Fui Yap, Holt, Brian, Gondal, Arfa, Seungman Choi, San Leong Liew, Yao, Walter, Justison, Patrick

“…This study demonstrates the impact of electrode surface modulation on conduction mechanism and TDDB behavior. We found that the Schottky barrier height can be…”
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An experimental methodology for the in-situ observation of the time-dependent dielectric breakdown mechanism in Copper/low-k on-chip interconnect structures by Kong Boon Yeap, Gall, M., Sander, C., Niese, S., Zhongquan Liao, Ritz, Y., Rosenkranz, R., Muhle, U., Gluch, J., Zschech, E., Aubel, O., Beyer, A., Hennesthal, C., Hauschildt, M., Talut, G., Poppe, J., Vogel, N., Engelmann, H., Stauffer, D., Major, R., Warren, O.

“…This study captures the time-dependent dielectric breakdown kinetics in nanoscale Cu/low-k interconnect structures, applying in-situ transmission electron…”
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Charge transport model to predict dielectric breakdown as a function of voltage, temperature, and thickness by Ogden, Sean P., Xu, Yueming, Yeap, Kong Boon, Shen, Tian, Lu, Toh-Ming, Plawsky, Joel L.

“…As the minimum pitch in interconnects continues to shrink, dielectric breakdown is becoming increasingly more difficult to qualify for each new technology…”
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Impact of 3D Via Middle TSV Process on 20nm Wafer Level FEOL and BEOL Reliability by Premachandran, C. S., England, Luke, Kannan, Sukeshwar, Ranjan, Rakesh, Kong Boon Yeap, Teo, Walter, Cimino, Salvatore, Tan Jing, Haojun Zhang, Smith, Daniel, Justison, Patrick, Parameshwaran, Biju, Iyer, Natarajan Mahadeva

“…The impact of after level reliability of TSV has been studied with respect to FEOL (Front End of Line) and BEOL (Back End of Line) and aspects. A TSV keep out…”
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Method to Determine the Root Cause of Low- \kappa SiCOH Dielectric Failure Distributions by Ogden, Sean P., Yeap, Kong Boon, Tian Shen, Justison, Patrick, Toh-Ming Lu, Plawsky, Joel L.

“…Low-κ SiCOH reliability is a growing concern for integrated circuit reliability. An important consideration for product qualification involves the accurate…”
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Effect of metal line width on electromigration of BEOL Cu interconnects by Choi, Seungman, Christiansen, Cathryn, Cao, Linjun, Zhang, James, Filippi, Ronald, Shen, Tian, Yeap, Kong Boon, Ogden, Sean, Zhang, Haojun, Fu, Bianzhu, Justison, Patrick

“…Electromigration reliability of BEOL Cu interconnects with various metal line widths and via sizes has been studied. EM lifetime significantly improves from…”
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Copper Anisotropy Effects in Three-Dimensional Integrated Circuits Using Through-Silicon Vias by Karmarkar, Aditya P., Xiaopeng Xu, Kong-Boon Yeap, Zschech, Ehrenfried

“…The elastic anisotropy of copper through-silicon vias (TSVs) and its impact on performance and reliability in 3-D integrated structures is examined. Copper…”
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New insight on TDDB area scaling methodology of non-Poisson systems by Shen, Tian, Yeap, Kong Boon, Ogden, Sean, Christiansen, Cathryn, Justison, Patrick

“…Non-Poisson area scaling behavior has long been observed in BEOL (Back End Of Line) and MOL (Middle Of Line) Time-dependent dielectric breakdown (TDDB)…”
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Interfacial delamination cracking shapes and stress states during wedge indentation in a soft-film-on-hard-substrate system—Computational simulation and experimental studies by Chen, Lei, Yeap, Kong Boon, Zeng, Kai Yang, She, Chong Min, Liu, Gui Rong

“…The shapes of the interfacial delamination crack and stress states during wedge indentation in a soft-film-on-hard-substrate system were investigated…”
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