Search Results - "Kong, W.M.T."

50-nm Metamorphic High-Electron-Mobility Transistors With High Gain and High Breakdown Voltages by Dong Xu, Kong, W.M.T., Xiaoping Yang, Mohnkern, L., Seekell, P., Mt. Pleasant, L., Duh, K.G., Smith, P.M., Pane-Chane Chao

“…We report the design, fabrication, and characterization of ultrahigh-gain metamorphic high-electron-mobility transistors (MHEMTs) with significantly enhanced…”
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Asymmetrically Recessed 50-nm Gate-Length Metamorphic High Electron-Mobility Transistor With Enhanced Gain Performance by Dong Xu, Kong, W.M.T., Xiaoping Yang, Smith, P.M., Dugas, D., Chao, P.C., Cueva, G., Mohnkern, L., Seekell, P., Pleasant, L.Mt, Schmanski, B., Duh, K.H.G., Karimy, H., Immorlica, A., Komiak, J.J.

“…We report the design, fabrication and characterization of ultrahigh gain metamorphic high electron-mobility transistors. In this letter, a high-yield 50-nm…”
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Design and fabrication of a wideband 56- to 63-GHz monolithic power amplifier with very high power-added efficiency by Tang, O.S.A., Liu, S.M.J., Chao, P.C., Kong, W.M.T., Hwang, K.C., Nichols, K., Heaton, J.

“…This paper describes the design, fabrication, and measurement of a wideband 60 GHz monolithic microwave integrated circuit (MMIC) power amplifier that has…”
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Very high efficiency V-band power InP HEMT MMICs by Kong, W.M.T., Wang, S.C., Pane-Chane Chao, Der-Wei Tu, Kuichul Hwang, Tang, O.S.A., Shih-Ming Liu, Pin Ho, Nichols, K., Heaton, J.

“…State-of-the-art power performance of a V-band InP HEMT MMIC is reported using a slot via process for reducing source inductance and a fully selective gate…”
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Scaling behaviors of 25-NM asymmetrically recessed metamorphic high electron-mobility transistors by Dong Xu, Kong, W.M.T., Xiaoping Yang, Seekell, P., Mohnkern, L., Pleasant, L.M., Karimy, H., Duh, K.H.G., Smith, P.M., Chao, P.C.

“…This paper reports the scaling behaviors of 25-nm asymmetrically recessed metamorphic high electron-mobility transistors. By employing an optimized epitaxial…”
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