Search Results - "Kong, Moufu"

Ultra-wide bandgap semiconductor Ga2O3 power diodes by Zhang, Jincheng, Dong, Pengfei, Dang, Kui, Zhang, Yanni, Yan, Qinglong, Xiang, Hu, Su, Jie, Liu, Zhihong, Si, Mengwei, Gao, Jiacheng, Kong, Moufu, Zhou, Hong, Hao, Yue

“…Ultra-wide bandgap semiconductor Ga 2 O 3 based electronic devices are expected to perform beyond wide bandgap counterparts GaN and SiC. However, the reported…”
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A novel 4H‐SiC accumulation mode MOSFET with ultra‐low specific on‐resistance and improved reverse recovery capability by Kong, Moufu, Duan, Yuanmiao, Zhang, Bingke, Yan, Ronghe, Yi, Bo, Yang, Hongqiang

“…Abstract A novel 1440‐V 4H‐SiC accumulation mode MOSFET (ACCUFET) with ultra‐low specific on‐resistance and improved reverse recovery performance is proposed…”
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A 1200-V-Class Ultra-Low Specific On-Resistance SiC Lateral MOSFET With Double Trench Gate and VLD Technique by Kong, Moufu, Hu, Zewei, Gao, Jiacheng, Chen, Zongqi, Zhang, Bingke, Yang, Hongqiang

“…An ultra-low specific on-resistance 4H-SiC power laterally diffused metal oxide semiconductor (LDMOS) device is proposed for 1200V-class applications. In the…”
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A Novel Isolation Method for Half-Bridge Power ICs by Kong, Moufu, Chen, Xingbi

“…A novel integrated solution for two high voltage power n-channel MOSFET transistors (NMOSTs) M H and M L and two level-shifting high-voltage NMOSTs M 1 and M 2…”
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A 600-V Super-Junction pLDMOS Utilizing Electron Current to Enhance Current Capability by Yi, Bo, Kong, Moufu, Lin, Jia, Cheng, Junji, Huang, Haimeng, Chen, Xingbi

“…In this paper, a super-junction p-type lateral diffused metal-oxide-semiconductor transistor (SJ-pLDMOS) utilizing electron to enhance the current capability…”
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Study on Dual Channel n-p-LDMOS Power Devices With Three Terminals by Kong, Moufu, Du, Wenfang, Chen, Xingbi

“…Two dual channel three-terminal transmission-gate-like n-p-lateral double-diffused metal oxide semiconductor (n-p-LDMOS) power devices with majorities of both…”
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An Novel Thin Layer SOI Carrier-Stored Trench LIGBT With Enhanced Emitter Injection by Yi, Bo, Lin, Jia, Wu, Jiayu, Kong, Moufu, Chen, Xingbi

“…An novel thin layer SOI carrier-stored (CS) trench lateral insulated gate bipolar transistor (TLIGBT) with diode-clamped P-shield layer is proposed. The…”
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A novel diode-clamped CSTBT with ultra-low on-state voltage and saturation current by Li, Ping, Kong, Moufu, Chen, Xingbi

“…A novel diode-clamped carrier stored trench bipolar transistor (CSTBT) with improved performances is proposed. The improvement has been achieved by introducing…”
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A Novel High-Voltage Pseudo-p-LDMOS Device With Three Current Conductive Paths by Kong, Moufu, Yi, Bo, Zhang, Bingke

“…A new concept high-voltage pseudo-p-channel lateral double-diffused MOS (p-LDMOS) with multiple current paths for conduction is proposed and investigated in…”
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Simulation Study of a p-LDMOS With Double Electron Paths to Enhance Current Capability by Yi, Bo, Kong, Moufu, Cheng, Junji

“…In this letter, a p-channel lateral double-diffused MOSFET (p-LDMOS) with double electron paths used to enhance the current capability is proposed. The…”
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A Novel No Miller Plateau SOI-LIGBT With Low Saturation Current and Improved Switching Performance by Zhang, Bingke, Kong, Moufu, Yi, Bo, Chen, Xingbi

“…This article proposes a new idea to improve the dI/dt and dV/dt controllability of the lateral insulated gate bipolar transistor (LIGBT). By employing an…”
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A Novel GaN Superjunction FinFET Power Device With a P-Type NiO Pillar for Improved Performance by Kong, Moufu, Yu, Ning, Zhang, Bingke, Cheng, Zeyu, Yi, Bo, Yang, Hongqiang

“…Fin field-effect transistor (FinFET) concept has been used to develop a new generation of vertical power devices based on gallium nitride (GaN) material. For…”
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A Novel Low on-State Voltage SOI LIGBT With Enhanced Conductivity Modulation by Zhang, Bingke, Kong, Moufu, Yi, Bo, Chen, Xingbi

“…A novel composite device structure with enhanced conductivity modulation silicon on insulator (SOI) lateral insulated gate bipolar transistor (LIGBT) which…”
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Investigation of a Novel Enhancement-Mode Al 0.25 Ga 0.75 N/AlN/Al X Ga (1-X) N/GaN MIS-HEMT for High V th and Low R on,sp by Yi, Bo, Xu, Yi, Cheng, Junji, Huang, Haimeng, Kong, Moufu, Yang, Hongqiang

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Investigation of a Novel Enhancement-Mode Al .\text} Ga .\text} N/AlN/Al } Ga - }\textit\text} N/GaN MIS-HEMT for High \textit} and Low \textit by Yi, Bo, Xu, Yi, Cheng, Junji, Huang, Haimeng, Kong, Moufu, Yang, Hongqiang

“…In this article, we proposed a composite-barrier-metal-insulator-semiconductor-high electron mobility transistor (CB-MIS-HEMT), in which a thick…”
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Investigation of a Novel Enhancement-Mode Al0.25Ga0.75N/AlN/Al X Ga(1-X)N/GaN MIS-HEMT for High Vth and Low R on,sp by Yi, Bo, Xu, Yi, Cheng, Junji, Huang, Haimeng, Kong, Moufu, Yang, Hongqiang

“…In this article, we proposed a composite-barrier-metal–insulator–semiconductor-high electron mobility transistor (CB-MIS-HEMT), in which a thick Al x…”
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A Novel Diode-Clamped Carrier Stored Trench IGBT With Improved Performances by Yi, Bo, Xie, XinTong, Kong, MouFu, Cheng, JunJi, Chen, XingBi

“…In this article, a novel diode-clamped carrier stored trench IGBT (DC-CS-TIGBT) is proposed and investigated by the TCAD tool. Two series-connected diodes…”
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A Novel Double-RESURF SOI-LIGBT With Improved V}-} Tradeoff and Low Saturation Current by Hu, Huan, Kong, Moufu, Yi, Bo, Chen, Xingbi

“…A novel double-reduced surface field technique (RESURF) insulated gate bipolar transistor based on lateral insulated gate bipolar transistor based on…”
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A High-Performance 4H-SiC JFET With Reverse Recovery Capability and Low Switching Loss by Kong, Moufu, Guo, Jiaxin, Gao, Jiacheng, Huang, Ke, Zhang, Bingke, Wang, Bin

“…A novel high-performance 1700-V 4H-Silicon carbide (SiC) junction field-effect transistor (JFET) with reverse recovery capability and low switching loss is…”
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A Novel Low Turn-Off Loss and Snapback-Free Reverse-Conducting SOI-LIGBT With Integrated Polysilicon Diodes by Hu, Huan, Kong, Moufu, Wu, Jiayu, Yi, Bo, Chen, Xing Bi

“…A novel reverse-conducting (RC) lateral insulated gate bipolar transistor based on the silicon-on-insulator (SOI-LIGBT) with integrated parallel/antiparallel…”
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