Search Results - "Kong, C.J."

The microstructures of a thermally sprayed and heat treated Al–20 wt.%Sn–3 wt.%Si alloy by Kong, C.J., Brown, P.D., Harris, S.J., McCartney, D.G.

“…High velocity oxy-fuel thermal spraying has been used to produce deposits of an Al–20 wt.%Sn–3 wt.%Si alloy approximately 300 μm thick on a steel substrate…”
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Welding with high power fiber lasers – A preliminary study by Quintino, L., Costa, A., Miranda, R., Yapp, D., Kumar, V., Kong, C.J.

“…The new generation of high power fiber lasers presents several benefits for industrial purposes, namely high power with low beam divergence, flexible beam…”
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Analysis of microstructure formation in gas-atomised Al–12wt.% Sn–1wt.% Cu alloy powder by Kong, C.J., Brown, P.D., Harris, S.J., McCartney, D.G.

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Analysis of microstructure formation in gas-atomised Al–12 wt.% Sn–1 wt.% Cu alloy powder by Kong, C.J., Brown, P.D., Harris, S.J., McCartney, D.G.

“…The microstructure of gas-atomised Al–12 wt.% Sn–1 wt.% Cu alloy powder has been investigated using scanning and transmission electron microscopy. Powder…”
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TEM assessment of HVOLF thermally sprayed Al–12 wt.% Sn–1 wt.% Cu alloy by Kong, C.J., Brown, P.D., Horlock, A., Harris, S.J., McCartney, D.G.

“…The high velocity oxy-liquid fuel (HVOLF) thermal spray technique has the potential to fabricate thick layers based on the Al–12wt.% Sn–1wt.% Cu alloy. The…”
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Electrical Characteristics of Near-Interface Traps in 3C-SiC Metal-Oxide-Semiconductor Capacitors by Kong, F.C.J., Dimitrijev, S., Jisheng Han

“…Deep-depletion capacitance measurements on n-type 3C-SiC MOS capacitors that exhibit both field and temperature dependencies are presented and analyzed in this…”
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Simulation of interface states effect on the scanning capacitance microscopy measurement of p–n junctions by Yang, J., Kong, F. C. J.

“…A two-dimensional numerical simulation model of interface states in scanning capacitance microscopy (SCM) measurements of p–n junctions is presented. In the…”
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Extraction of MOSFET threshold voltage, series resistance, effective channel length, and inversion layer mobility from small-signal channel conductance measurement by Kong, F.C.J., Yeow, Y.T., Yao, Z.Q.

“…This paper proposes and demonstrates the extraction of MOSFET threshold voltage, source-drain resistance, gate field mobility reduction factor, and transistor…”
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