Search Results - "Konenkov, S. D."

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  1. 1

    Synthesis of Hexagonal AlN and GaN Layers on a Si(100) Substrate by Chloride Vapor-Phase Epitaxy by Bessolov, V. N., Gushchina, E. V., Konenkova, E. V., Konenkov, S. D., L’vova, T. V., Panteleev, V. N., Shcheglov, M. P.

    Published in Technical physics (01-04-2019)
    “…Synthesis of AlN and GaN layers on a Si(100) substrate by chloride vapor-phase epitaxy has been considered. The process includes sulfidizing of the silicon…”
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    Journal Article
  2. 2

    Semipolar III-N Layers Deposited on a Nanostructured Silicon Substrate: Process and Luminescence Specificity by Bessolov, V. N., Konenkova, E. V., Konenkov, S. D., Panteleev, V. N.

    “…A study is performed of the advantages of synthesizing layers of AlN via gas-phase chloride epitaxy and layers of GaN via organometallic epitaxy on a…”
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    Journal Article