Search Results - "Konashuk, Aleksei S"

Interpretation of the Changing the Band Gap of Al2O3 Depending on Its Crystalline Form: Connection with Different Local Symmetries by Filatova, Elena O, Konashuk, Aleksei S

“…The valence and conduction bands of am- and γ-Al2O3 films grown by the atomic layer deposition technique were studied simultaneously in identical experimental…”
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Inhibition of Oxygen Scavenging by TiN at the TiN/SiO2 Interface by Atomic-Layer-Deposited Al2O3 Protective Interlayer by Filatova, Elena O, Sakhonenkov, Sergei S, Konashuk, Aleksei S, Kasatikov, Sergey A, Afanas’ev, Valeri V

“…Chemical composition of interfaces between physical-vapor-deposited TiN and SiO2 as affected by introduction of a thin (0.5–3 nm) alumina interlayer was…”
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Mechanisms of TiN Effective Workfunction Tuning at Interfaces with HfO2 and SiO2 by Filatova, Elena O, Konashuk, Aleksei S, Sakhonenkov, Sergei S, Gaisin, Aidar U, Kolomiiets, Nadiia M, Afanas’ev, Valeri V, Dekkers, Harold F. W

“…By use of a combination of electrical measurements and internal photoemission interface barrier characterization, the effective workfunction (EWF) changes of…”
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Analysis of Oxygen and Nitrogen Redistribution at Interfaces of HfO2 with Laminate TiN/TiAl/TiN Electrodes by Konashuk, Aleksei S, Filatova, Elena O, Sakhonenkov, Sergei S, Kolomiiets, Nadiia M, Afanas’ev, Valeri V

“…The physicochemical nature of the change in the effective work function (EWF) of aluminum doped TiN (using TiN/TiAl/TiN laminate structure) was studied by…”
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Metallization-Induced Oxygen Deficiency of γ‑Al2O3 Layers by Filatova, Elena O, Konashuk, Aleksei S, Schaefers, Franz, Afanas’ev, Valeri V

“…γ-Al2O3 layers fabricated by annealing-induced crystallization of ALD-grown amorphous (a-) Al2O3 films were studied using near-edge-X-ray absorption fine…”
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Role of Postdeposition Annealing and Doping with Si and Al Impurities in the Formation of Hf x Si1–x O2 at the SiO2/FE:HfO2 Interface in a Ferroelectric Field-Effect Transistor by Konashuk, Aleksei S., Filatova, Elena O., Bugaev, Aleksandr V., Sakhonenkov, Sergei S., Danilov, Denis V.

“…Characterization of the composition and extension of the SiO2/HfO2 interface in the model systems Si-sub./SiO2 (7.5 nm)/FE:HfO2 (9.5 nm)/TiN (9 nm) for…”
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Role of Postdeposition Annealing and Doping with Si and Al Impurities in the Formation of Hf x Si 1– x O 2 at the SiO 2 /FE:HfO 2 Interface in a Ferroelectric Field-Effect Transistor by Konashuk, Aleksei S., Filatova, Elena O., Bugaev, Aleksandr V., Sakhonenkov, Sergei S., Danilov, Denis V.

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Analysis of Oxygen and Nitrogen Redistribution at Interfaces of HfO 2 with Laminate TiN/TiAl/TiN Electrodes by Konashuk, Aleksei S., Filatova, Elena O., Sakhonenkov, Sergei S., Kolomiiets, Nadiia M., Afanas’ev, Valeri V.

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Interpretation of the Changing the Band Gap of Al 2 O 3 Depending on Its Crystalline Form: Connection with Different Local Symmetries by Filatova, Elena O., Konashuk, Aleksei S.

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Inhibition of Oxygen Scavenging by TiN at the TiN/SiO 2 Interface by Atomic-Layer-Deposited Al 2 O 3 Protective Interlayer by Filatova, Elena O., Sakhonenkov, Sergei S., Konashuk, Aleksei S., Kasatikov, Sergey A., Afanas’ev, Valeri V.

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Mechanisms of TiN Effective Workfunction Tuning at Interfaces with HfO 2 and SiO 2 by Filatova, Elena O., Konashuk, Aleksei S., Sakhonenkov, Sergei S., Gaisin, Aidar U., Kolomiiets, Nadiia M., Afanas’ev, Valeri V., Dekkers, Harold F. W.

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Metallization-Induced Oxygen Deficiency of γ-Al 2 O 3 Layers by Filatova, Elena O., Konashuk, Aleksei S., Schaefers, Franz, Afanas’ev, Valeri V.

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Hierarchy-induced X-ray linear dichroism in cortical bone by Konashuk, Aleksei S., Brykalova, Xenia O., Kornilov, Nikolai N., Filatova, Elena O., Pavlychev, Andrey A.

“…The high-resolution X-ray absorption spectra of rat tibia cortex have been measured for two different orientations of the bone long axis in respect to the…”
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