Search Results - "Kon’kov, O.I"

Modification of the structure and percolation of current in an array of single-walled carbon nanotubes by Prikhod’ko, A. V., Kon’kov, O. I.

“…Percolation and electrical instability processes in an array of single-walled carbon nanotubes have been studied experimentally. The experiment is based on…”
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Percolation, self-organized criticality, and electrical instability in carbon nanostructures by Prikhod’ko, A. V., Kon’kov, O. I.

“…The processes of avalanche formation, percolation, and electrical instability have been investigated experimentally using multi-walled and single-walled carbon…”
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On the collection of photocarriers in high-resistance silicon amorphous-crystalline heterostructures by Kotina, I. M., Danishevskii, A. M., Kon’kov, O. I., Terukov, E. I., Tuhkonen, L. M.

“…The mechanism of electron transport in amorphous-crystalline heterostructures fabricated on the basis of high-resistivity p -Si is considered in order to…”
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Carbon nanostructures as an example of the self-organized criticality by Prikhod’ko, A. V., Kon’kov, O. I.

“…The mechanism of self-organized criticality in the region of the nano- and microsizes has been studied experimentally using carbon multiwalled nanotubes and…”
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I-V characteristics of high-voltage 4H-SiC diodes with a 1.1-eV Schottky barrier by Ivanov, P. A., Grekhov, I. V., Kon’kov, O. I., Potapov, A. S., Samsonova, T. P., Semenov, T. V.

“…The I - V characteristics of high-voltage 4 H -SiC diodes with a Schottky barrier ∼1.1 eV in height are measured and analyzed. The forward I - V…”
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High-voltage (3.3 kV) 4H-SiC JBS diodes by Ivanov, P. A., Grekhov, I. V., Il’inskaya, N. D., Kon’kov, O. I., Potapov, A. S., Samsonova, T. P., Serebrennikova, O. U.

“…High-voltage 4 H -SiC junction-barrier Schottky (JBS) diodes have been fabricated and studied. The working area of the diodes (anode contact area) is 1.44 mm 2…”
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Microdetermination of titanium on the developed silicon surface using cells made of perfluorinated proton-conducting membranes by Nikitin, S. E., Terukov, E. I., Kon’kov, O. I., Bobyl’, A. V., Timofeev, S. V.

“…A technique for microdetermination of titanium on the developed silicon surface is suggested. In this technique, thin titanium layers are dissolved in an…”
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Leakage currents in 4H-SiC JBS diodes by Ivanov, P. A., Grekhov, I. V., Potapov, A. S., Kon’kov, O. I., Il’inskaya, N. D., Samsonova, T. P., Korol’kov, O., Sleptsuk, N.

“…Leakage currents in high-voltage 4 H -SiC diodes, which have an integrated ( p - n ) Schottky structure (Junction Barrier Schottky, JBS), have been studied…”
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Excess leakage currents in high-voltage 4H-SiC Schottky diodes by Ivanov, P. A., Grekhov, I. V., Potapov, A. S., Samsonova, T. P., Il’inskaya, N. D., Kon’kov, O. I., Serebrennikova, O. Yu

“…The high-voltage 4 H -SiC Schottky diodes are fabricated with a nickel barrier and a guard system in the form of “floating” planar p-n junctions. The analysis…”
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Specific features of amorphous silicon layers grown by plasma-enhanced chemical vapor deposition with tetrafluorosilane by Vainshtein, J. S., Kon’kov, O. I., Kukin, A. V., El’tsina, O. S., Belyakov, L. V., Terukov, E. I., Sreseli, O. M.

“…Hydrogenated amorphous silicon layers with crystalline nanoparticles have been produced by plasma-enhanced chemical vapor deposition, with tetrafluorosilane…”
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Lithium insertion into amorphous silicon thin-film electrodes by Kulova, T.L., Skundin, A.M., Pleskov, Yu.V., Terukov, E.I., Kon’kov, O.I.

“…The electrochemical lithium insertion into a-Si:H thin-film electrodes, CVD-grown on stainless-steel substrates at 100 and 250 °C, is studied using…”
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Dynamic characteristics of 4H-SiC drift step recovery diodes by Ivanov, P. A., Kon’kov, O. I., Samsonova, T. P., Potapov, A. S., Grekhov, I. V.

“…The dynamic characteristics of 4 H -SiC p + – p – n 0 – n + diodes are experimentally studied in the pulsed modes characteristic of the operation of drift step…”
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Effect of the femtosecond laser treatment of hydrogenated amorphous silicon films on their structural, optical, and photoelectric properties by Emelyanov, A. V., Kazanskii, A. G., Kashkarov, P. K., Konkov, O. I., Terukov, E. I., Forsh, P. A., Khenkin, M. V., Kukin, A. V., Beresna, M., Kazansky, P.

“…The effect of the femtosecond laser treatment of hydrogenated amorphous silicon ( a -Si:H) films on their structural, optical, and photoelectric properties is…”
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Resistance of 4H-SiC Schottky barriers at high forward-current densities by Ivanov, P. A., Samsonova, T. P., Il’inskaya, N. D., Serebrennikova, O. Yu, Kon’kov, O. I., Potapov, A. S.

“…The resistance of Schottky barriers based on 4 H -SiC is experimentally determined at high forward-current densities. The measured resistance is found to be…”
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A large area silicon UCN detector with the analysis of UCN polarization by Lasakov, M.S., Serebrov, A.P., Khusainov, A.Kh, Pustovoit, A., Borisov, Yu.V., Fomin, A.K., Geltenbort, P., Kon’kov, O.I., Kotina, I.M., Shablii, A.I., Solovei, V.A., Vasiliev, A.V.

“…A silicon UCN detector with an area of 45 cm 2 and with a 6 LiF converter was developed at PNPI. The spectral efficiency of the silicon UCN detector was…”
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Iron disilicide formed in a-Si〈Fe〉 thin films by magnetron co-sputtering by Kudoyarova, V.Kh, Terukov, E.I, Kon’kov, O.I, Gusev, O.B, Davydov, V.Yu, Mosina, G.N

“…The formation of β-FeSi2 precipitates was observed for the first time in microcrystalline Si films. The Fe-doped amorphous Si films (a-Si:Fe) were obtained…”
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Erbium incorporation in plasma-deposited amorphous silicon by Terukov, E.I., Konkov, O.I., Kudoyarova, V.Kh, Koughia, K.V., Weiser, G., Kühne, H., Kleider, J.P., Longeaud, C., Brüggemann, R.

“…Erbium doped amorphous silicon has been prepared by the evaporation of Er containing metallo-organics inside the plasma of a plasma enhanced chemical vapor…”
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Amorphous carbon: how much of free hydrogen? by Kapitonov, I.N, Konkov, O.I, Terukov, E.I, Trapeznikova, I.N

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Electronic properties of Erbium doped amorphous silicon by Kleider, J.P., Longeaud, C., Meaudre, R., Meaudre, M., Vignoli, S., Koughia, K.V., Terukov, E.I., Konkov, O.I.

“…The electronic properties of Er doped PECVD a-Si:H films, produced by the evaporation of an Er containing metal-organic compound into the glow discharge have…”
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Structure and properties of a-Si:H films grown by cyclic deposition by Afanas’ev, V. P., Gudovskikh, A. S., Kon’kov, O. I., Kazanin, M. M., Kougiya, K. V., Sazanov, A. P., Trapeznikova, I. N., Terukov, E. I.

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