Investigation on the surface potential and the depletion layer of Si-Schottky barrier diode - Evaluation by numerical calculation

Spatiotemporal variations of carrier density and potential in silicon-Schottky barrier diode (Si-SBD) have been simulated using a self-consistent spatially two-dimensional fluid model, based on the continuity equation and the Poisson equation. The validity of the fluid model, developed in this work,...

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Bibliographic Details
Published in:	2016 19th International Conference on Electrical Machines and Systems (ICEMS) pp. 1 - 4
Main Authors:	Komori, Kyohei, Oda, Akinori, Uruma, Takeshi, Satoh, Nobuo, Yamamoto, Hidekazu
Format:	Conference Proceeding
Language:	English
Published:	The Institute of Electrical Engineers of Japan 01-11-2016
Subjects:	Depletion Layer Distribution functions Electric potential Force Graphical models Mathematical model Microscopy Schottky Barrier Diode Simulation Surface topography
Online Access:	Get full text
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Summary:	Spatiotemporal variations of carrier density and potential in silicon-Schottky barrier diode (Si-SBD) have been simulated using a self-consistent spatially two-dimensional fluid model, based on the continuity equation and the Poisson equation. The validity of the fluid model, developed in this work, was shown because simulated surface-potential mapping was qualitatively good agreement with experimental one. The negatively-charged fixed-charge region may play an important role in determining the width of depletion-layer in Si-SBD. Furthermore, the depletion layer was uniformly formed with an increase in reverse bias voltage.