Search Results - "Komissarova, T.A."

Metastable nature of InN and In-rich InGaN alloys by Ivanov, S.V., Shubina, T.V., Komissarova, T.A., Jmerik, V.N.

“…The paper provides a thermodynamic insight into the metastable nature of InN and In-rich InGaN alloys, based on experimental studies of their plasma-assisted…”
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Peculiarities of strain relaxation in linearly graded InxGa1−xAs/GaAs(001) metamorphic buffer layers grown by molecular beam epitaxy by Sorokin, S.V., Klimko, G.V., Sedova, I.V., Sitnikova, A.A., Kirilenko, D.A., Baidakova, M.V., Yagovkina, M.A., Komissarova, T.A., Belyaev, K.G., Ivanov, S.V.

“…This paper presents a comprehensive study of structural, optical and electrical properties of heterostructures with linearly graded InxGa1−xAs metamorphic…”
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Influence of MBE growth modes and conditions on spontaneous formation of metallic In nanoparticles and electrical properties of InN matrix by Komissarova, T.A., Wang, P., Paturi, P., Wang, X., Ivanov, S.V.

“…•Effect of In nanoparticles on electrical properties of InN MBE layers depends on growth modes.•Three-step growth comprising MBE, MEE, and DERI modes minimizes…”
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Transport parameters and optical properties of selectively doped GaSe heterovalent structures with a two-dimensional hole channel by Evropeytsev, E.A, Klimko, G.V, Komissarova, T.A, Sedova, I.V, Sorokin, S.V, Gronin, S.V, Kazantsev, D. Yu, Ber, B. Ya, Ivanov, S.V, Toropov, A.A

“…The growth of III--V/II--VLMn heterostructures with a high hole concentration in the AlGaAs:Be/GaAs/AlGaAs 2D channel situated in the immediate vicinity of the…”
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Peculiarities of the electrophysical properties of InSb/AlInSb/AlSb heterostructures with a high electron concentration in the two-dimensional channel by Komissarova, T. A., Semenov, A. N., Meltser, B. Ya, Solov’ev, V. A., Paturi, P., Fedorov, D. L., Kop’ev, P. S., Ivanov, S. V.

“…The electrophysical properties of InSb/AlInSb/AlSb heterostructures with a high electron concentration are reported. We have observed anisotropy of the…”
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Features of molecular-beam epitaxy and structural properties of AlInSb-based heterostructures by Semenov, A. N., Meltser, B. Ya, Solov’ev, V. A., Komissarova, T. A., Sitnikova, A. A., Kirylenko, D. A., Nadtochyi, A. M., Popova, T. V., Kop’ev, P. S., Ivanov, S. V.

“…AlInSb layers are grown on highly lattice-mismatched GaAs (100) substrates by molecular-beam epitaxy (MBE) and studied in situ by reflection high-energy…”
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Strain relaxation in convex-graded InxAl1-xAs (x = 0.05–0.79) metamorphic buffer layers grown by molecular beam epitaxy on GaAs(001) by Solov’ev, V.A., Chernov, M. Yu, Baidakova, M.V., Kirilenko, D.A., Yagovkina, M.A., Sitnikova, A.A., Komissarova, T.A., Kop’ev, P.S., Ivanov, S.V.

“…This paper presents a study of structural properties of InGaAs/InAlAs quantum well (QW) heterostructures with convex-graded InxAl1-xAs (x = 0.05–0.79)…”
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Growth Control of N-Polar GaN in Plasma-Assisted Molecular Beam Epitaxy by Mizerov, A.M., Jmerik, V.N., Kaibyshev, V.K., Komissarova, T.A., Masalov, S.A., Sitnikova, A.A., Ivanov, S.V.

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