Search Results - "Komem, Yigal"
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Numerical computation of chemisorption isotherms for device modeling of semiconductor gas sensors
Published in Sensors and actuators. B, Chemical (01-08-2003)“…A computational method for numerical calculations of adsorption isotherms for both non-dissociative and dissociative chemisorption of gases on semiconductors…”
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Resolving Bulk and Grain Boundary Transport Properties of TiO 2 Thin Films Enabled by Laser‐Induced Anisotropic Morphology
Published in Advanced materials (Weinheim) (02-08-2011)Get full text
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Resolving Bulk and Grain Boundary Transport Properties of TiO2 Thin Films Enabled by Laser-Induced Anisotropic Morphology
Published in Advanced materials (Weinheim) (02-08-2011)“…Precise deconvolution of grain and grain boundary contributions to the overall impedance of TiO2 thin films is achieved by impedance spectroscopy measurements…”
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Resolving Bulk and Grain Boundary Transport Properties of TiO sub(2) Thin Films Enabled by Laser-Induced Anisotropic Morphology
Published in Advanced materials (Weinheim) (01-08-2011)“…Precise deconvolution of grain and grain boundary contributions to the overall impedance of TiO sub(2) thin films is achieved by impedance spectroscopy…”
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On the Relationship Between the Grain Size and Gas-Sensitivity of Chemo-Resistive Metal-Oxide Gas Sensors with Nanosized Grains
Published in Journal of electroceramics (01-07-2004)“…In this work we elaborate the effect of grain size on the sensitivity of chemo-resistive metal-oxide gas sensors with nanosized grains. The effective carrier…”
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Decomposition and modulated structure formation during amorphous Si 1 − xGe x crystallization
Published in Thin solid films (1995)“…The crystallization process in undoped amorphous Si 1 − x Ge x films with x = 0.09–0.54 and those deposited on silicon oxide by molecular beam processing, was…”
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Decomposition and modulated structure formation during amorphous Si sub(1-x)Ge sub(x) crystallization
Published in Thin solid films (01-01-1995)“…The crystallization process in undoped amorphous Si sub(1-x)Ge sub(x) films with x identical with 0.09-0.54 and those deposited on silicon oxide by molecular…”
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Decomposition and modulated structure formation during amorphous Si1-xGex crystallization
Published in Thin solid films (01-10-1995)Get full text
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Experimental extraction of point defects parameters needed for 2-D process modeling using reverse modeling
Published in Proceedings of the 2004 11th IEEE International Conference on Electronics, Circuits and Systems, 2004. ICECS 2004 (2004)“…This work deals with the simulation of two-dimensional impurity diffusion in CMOS silicon devices. The reverse modeling method was used to determine the…”
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