Interband cascade lasers grown simultaneously on GaSb, GaAs and Si substrates

We report on Sb-based interband cascade lasers simultaneously grown on GaSb, GaAs and Si substrates. 8 µm x 2 mm devices exhibited similar threshold currents around 40 mA at 20°C and achieved continuous-wave (CW) operation up to 65°C on GaSb, GaAs and Si substrates despite a dislocation density of ∼...

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Bibliographic Details
Published in:	Optics express Vol. 32; no. 7; pp. 11057 - 11064
Main Authors:	Fagot, Maeva, Díaz-Thomas, Daniel A, Gilbert, Audrey, Kombila, Gad, Ramonda, Michel, Rouillard, Yves, Baranov, Alexei N, Rodriguez, Jean-Baptiste, Tournié, Eric, Cerutti, Laurent
Format:	Journal Article
Language:	English
Published:	United States Optical Society of America - OSA Publishing 25-03-2024
Subjects:	Engineering Sciences Micro and nanotechnologies Microelectronics
Online Access:	Get full text
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Summary:	We report on Sb-based interband cascade lasers simultaneously grown on GaSb, GaAs and Si substrates. 8 µm x 2 mm devices exhibited similar threshold currents around 40 mA at 20°C and achieved continuous-wave (CW) operation up to 65°C on GaSb, GaAs and Si substrates despite a dislocation density of ∼ 4.10 cm for both mismatched substrates. In the CW regime the output power of the devices emitting at 3.3 µm exceeded 30 mW/facet at 20°C. ICLs on GaAs and Si were subsequently aged at 50°C with an injection current of 200 mA, i.e. five times the laser-threshold current. No degradation was observed after 500 h of CW operation, demonstrating the high performance of ICLs and their tolerance to dislocations.
Bibliography:	ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23
ISSN:	1094-4087 1094-4087
DOI:	10.1364/OE.514069