Search Results - "Kolomiytsev, A. S."

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  1. 1

    Controlling the parameters of focused ion beam for ultra-precise fabrication of nanostructures by Kolomiytsev, A.S., Gromov, A.L., Il'in, O.I., Panchenko, I.V., Kotosonova, A.V., Ballouk, A., Rodriguez, D., Ageev, O.A.

    Published in Ultramicroscopy (01-04-2022)
    “…•The control of the trajectory of the beam, the choice of the optimal ratio of dwell time and the number of beam passes, can significantly increase the…”
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  2. 2

    Novel technology for controlled fabrication of aperture cantilever sensors for scanning near-field optical microscopy by Kolomiytsev, A.S., Kotosonova, A.V., Il’in, O.I., Saenko, A.V., Shelaev, A.V., Baryshev, A.V.

    Published in Micron (Oxford, England : 1993) (01-04-2024)
    “…This paper presents a new technique for forming SNOM (Scanning Near-Field Optical Microscopy) cantilevers. The technique is based on the continuous growth of a…”
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  3. 3

    Nanosized Modification of the Silicon Surface by the Method of Focused Ion Beams by Kots, I. N., Polyakova, V. V., Morozova, Yu. V., Kolomiytsev, A. S., Klimin, V. S., Ageev, O. A.

    Published in Russian microelectronics (01-06-2022)
    “…This paper presents the results of experimental studies of the modes of formation of nanosized structures on the surface of a silicon substrate by the method…”
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  4. 4

    Carbon tip aperture cantilevers: Fabrication & features in near-field magneto-optical imaging by Vysokikh, Yu. E., Mikhailova, T.V., Krasnoborodko, S. Yu, Kolomiytsev, A.S., Ilin, O.I., Shaposhnikov, A.N., Berzhansky, V.N., Bulatov, M.F., Churikov, D.V., Shevyakov, V.I.

    “…•Particular way to reveal the nanoscale features of domain structures is considered.•Near field polarization measurements by carbon aperture cantilevers is…”
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  5. 5

    Nanoscale profiling of multilayer graphene films on silicon carbide by a focused ion beam by Kolomiytsev, A.S., Jityaev, I.L., Svetlichnyi, A.M., Fedotov, A.A., Ageev, O.A.

    Published in Diamond and related materials (01-10-2020)
    “…The controlled and reproducible formation of a nanoscale interelectrode gap is crucial for the development of next-generation nanoelectronics devices, such as…”
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  6. 6

    Study of Nanoscale Profiling Modes of GaAs Epitaxial Structures by Focused Ion Beams by Lisitsyn, S. A., Balakirev, S. V., Avilov, V. I., Kolomiytsev, A. S., Klimin, V. S., Solodovnik, M. S., Konoplev, B. G., Ageev, O. A.

    Published in Nanotechnologies in Russia (2018)
    “…The nanoscale profiling modes of epitaxial GaAs layers are experimentally studied through focused ion beams (FIB). The regularities of the influence of ion…”
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  7. 7

    Study of Ion Beam Including Deposition Modes of Platinum Nanosized Structures Using by Focused Ion Beams by Lisitsyn, S. A., Kolomiytsev, A. S., Il’in, O. I., Il’ina, M. V., Konoplev, B. G., Bykov, A. V., Ageev, O. A.

    Published in Russian microelectronics (01-12-2017)
    “…The results of experimental studies of the Pt structure with the thickness ranging from (0.48 ± 0.1) to (24.38 ± 0.1) nm ion beam including deposition by…”
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  8. 8

    Fabrication of advanced probes for atomic force microscopy using focused ion beam by Ageev, O.A., Kolomiytsev, A.S., Bykov, A.V., Smirnov, V.A., Kots, I.N.

    Published in Microelectronics and reliability (01-08-2015)
    “…In this work the results of experimental studies of a fabrication of advanced probes for Atomic Force Microscopy (AFM) using Focused Ion Beam (FIB) and…”
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  9. 9

    Characterization of field-emission cathodes based on graphene films on SiC by Konakova, R. V., Okhrimenko, O. B., Svetlichnyi, A. M., Ageev, O. A., Volkov, E. Yu, Kolomiytsev, A. S., Jityaev, I. L., Spiridonov, O. B.

    Published in Semiconductors (Woodbury, N.Y.) (01-09-2015)
    “…The properties of a point field-emission cathode representing a structure in the form of a silicon carbide tip coated with a thin graphene film are assessed…”
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  10. 10

    Formation of nanosize structures on a silicon substrate by method of focused ion beams by Ageev, O. A., Kolomiytsev, A. S., Konoplev, B. G.

    Published in Semiconductors (Woodbury, N.Y.) (01-12-2011)
    “…The results of experimental studies of modes in which nanosize structures are formed on a silicon substrate by method of focused ion beams are presented…”
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  11. 11

    Modeling of the substrate topography upon nanosized profiling by focused ion beams by Ageev, O. A., Alekseev, A. M., Vnukova, A. V., Gromov, A. L., Kolomiytsev, A. S., Konoplev, B. G.

    Published in Nanotechnologies in Russia (2014)
    “…This paper presents the results of a mathematical model developed for calculating two-dimensional topography of the substrate surface when etching by a focused…”
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  12. 12

    Studying the resolving power of nanosized profiling using focused ion beams by Ageev, O. A., Alekseev, A. M., Vnukova, A. V., Gromov, A. L., Kolomiytsev, A. S., Konoplev, B. G., Lisitsyn, S. A.

    Published in Nanotechnologies in Russia (2014)
    “…The results of experimental studies of the resolving power and accuracy of nanosized profiling using focused ion beams (FIBs) are presented. Dependences of the…”
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  13. 13

    Analysis of modes of nanoscale profiling during ion-stimulated deposition of W and Pt using the method of focused ion beams by Ageev, O. A., Vnukova, A. V., Gromov, A. L., Il’in, O. I., Kolomiytsev, A. S., Konoplev, B. G., Lisitsyn, S. A.

    Published in Nanotechnologies in Russia (01-03-2014)
    “…In this work the results obtained in experimental studies of conditions of the nanoscale profiling of a silicon substrate surface under the ion stimulation of…”
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