Search Results - "Koley, G."

Electrically tunable molecular doping of graphene by Singh, A. K., Uddin, M. A., Tolson, J. T., Maire-Afeli, H., Sbrockey, N., Tompa, G. S., Spencer, M. G., Vogt, T., Sudarshan, T. S., Koley, G.

“…Electrical tunability of molecular doping of graphene has been investigated using back-gated field effect transistors. Variation of the gate voltage from…”
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On the origin of the two-dimensional electron gas at the AlGaN∕GaN heterostructure interface by Koley, G., Spencer, M. G.

“…Bare surface barrier heights (BSBHs) of AlGaN/GaN heterostructures, with varying AlGaN layer thickness and {approx}35% Al alloy composition, have been measured…”
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Highly sensitive and multidimensional detection of NO₂ using In₂O₃ thin films by Nomani, Md. W.K, Kersey, D, James, J, Diwan, D, Vogt, T, Webb, Richard A, Koley, G

“…We report on the ultrasensitive and unique detection of NO₂ with respect to common gaseous interferents through multi-dimensional signature analysis using…”
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Correlated conductivity and work function changes in epitaxial graphene by Nomani, Md W. K., Shields, V., Tompa, G., Sbrockey, N., Spencer, M. G., Webb, R. A., Koley, G.

“…Correlation between conductance and surface work function (SWF) changes caused by molecular adsorption on epitaxial graphene on both faces of 6H-SiC has been…”
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Scanning Kelvin probe microscopy characterization of dislocations in III-nitrides grown by metalorganic chemical vapor deposition by Koley, G., Spencer, M. G.

“…Scanning Kelvin probe microscopy has been used in conjunction with noncontact atomic force microscopy for characterizing dislocations in n-GaN and…”
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Gas sensing using electrostatic force potentiometry by Koley, G., Qazi, M., Lakshmanan, L., Thundat, T.

“…A highly sensitive potentiometric technique generally applicable for detection of gases utilizing adsorption-induced changes in surface work function is…”
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Cantilever effects on the measurement of electrostatic potentials by scanning Kelvin probe microscopy by Koley, G., Spencer, M. G., Bhangale, H. R.

“…Scanning Kelvin probe microscopy (SKPM) is a unique way to measure electrostatic potentials for small geometries. It has numerous applications including…”
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Modification of Indium Tin Oxide for Improved Hole Injection in Organic Light Emitting Diodes by Shen, Y., Jacobs, D. B., Malliaras, G. G., Koley, G., Spencer, M. G., Ioannidis, A.

“…The efficiency of multi‐layer OLEDs using indium tin oxide (ITO) and triphenyldiamine is limited by the hole injection rate, or the quality of the contact…”
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Microwave performance evaluation of diamond surface channel FETs by Kubovic, M., Kasu, M., Kallfass, I., Neuburger, M., Aleksov, A., Koley, G., Spencer, M.G., Kohn, E.

“…Diamond is expected to become an important semiconductor for high power and high frequency applications. Recent progress in fabrication technology has enabled…”
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Reduced trapping effects and improved electrical performance in buried-gate 4H-SiC MESFETs by Ho-Young Cha, Thomas, C.I., Koley, G., Eastman, L.F., Spencer, M.G.

“…Surface effects on the current instability of 4H-SiC MESFETs were studied by comparing different surface structures. The current instability phenomenon was…”
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Synthesis and Properties of High-Quality InN Nanowires and Nanonetworks by Cai, Z., Garzon, S., Chandrashekhar, M.V.S., Webb, R.A., Koley, G.

“…We report on the growth of high-quality InN nanowires by the vapor–liquid–solid mechanism at rates of up to 30  μ m/h. Smooth and horizontal nanowire growth…”
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Nanoscale surface characterization of GaN nanowires correlated with metal contact characteristics by Koley, G., Lakshmanan, L., Wu, H., Cha, Ho-Young

“…Surface electronic properties of GaN nanowires have been investigated using scanning probe microscopy and correlated with metal/nanowire contact…”
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Laser-induced surface potential transients observed in III-nitride heterostructures by Koley, G., Cha, Ho-Young, Thomas, C. I., Spencer, M. G.

“…We report on very long surface potential transients induced by ultraviolet laser illumination, which have been observed in nitride heterostructures. These…”
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Slow transients observed in AlGaN HFETs: Effects of SiN/sub x/ passivation and UV illumination by Koley, G., Tilak, V., Eastman, L.F., Spencer, M.G.

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Nanoscale Capacitance–Voltage Characterization of Two-Dimensional Electron Gas in AlGaN/GaN Heterostructures by Koley, G., Lakshmanan, L., Tipirneni, N., Gaevski, M., Koudymov, A., Simin, G., Cha, Ho-Young, Spencer, M. G., Khan, A.

“…A simple technique for quantitative nanoscale capacitance–voltage ( C – V ) measurements has been developed and used to characterize the two-dimensional…”
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Investigation of CdZnTe crystal defects using scanning probe microscopy by Koley, G., Liu, J., Mandal, Krishna C.

“…Surface electronic properties of Cd 0.9 Zn 0.1 Te (CZT) crystals have been characterized using scanning spreading resistance microscopy (SSRM) and correlated…”
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Modulation of Surface Barrier in AlGaN/GaN Heterostructures by Koley, G., Cha, Ho-Young, Tilak, V., Eastman, L.F., Spencer, M.G.

“…Large modulation of the surface barrier height in AlGaN/GaN heterostructures has been observed under different perturbations. Exposure to UV illumination…”
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Influence of 4H-SiC semi-insulating substrate purity on SiC metal-semiconductor field-effect transistor performance by ZHANG, A. P, ROWLAND, L. B, ALLEN, A. F, COOK, J, FOPPES, J, EDWARD, B. J, KAMINSKY, E. B, TUCKER, J. B, BEAUPRE, R. A, KRETCHMER, J. W, GARRETT, J. L, VERTIATCHIKH, A, KOLEY, G, CHA, H. Y

“…The performances of SiC MESFETs fabricated on conventional V-doped semi-insulating substrates and new V-free semi-insulating substrates have been compared. The…”
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Slow transients observed in AlGaN/GaN HFETs: effects of SiNx passivation and UV illumination by Koley, G, Tilak, V, Eastman, L.F, Spencer, M.G

“…Very slow drain current and surface potential transients have been observed in AlGaN/GaN heterostructure field effect transistors that are subjected to high…”
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Impedance spectroscopic analysis of Functionalized Graphene/silicon Schottky Diode sensor by Uddin, M. A., Singh, A. K., Daniels, K. M., Chandrashekhar, M. V. S., Koley, G.

“…The sensor response of Functionalized Graphene chemiresistor and Graphene/p-Si Schottky Diode has been analyzed by DC amperometric measurement and AC impedance…”
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