Capacitive methods for testing of power semiconductor devices
Electrical capacity of power semiconductor devices is quite an important parameter that can be utilized not only for testing a component itself, but it can also be applied practically; e.g. in series-connected high voltage devices. This paper first analyzes the theoretical voltage distribution on th...
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| Published in: | Facta universitatis. Series Electronics and energetics Vol. 28; no. 3; pp. 495 - 505 |
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| Main Authors: | , , |
| Format: | Journal Article |
| Language: | English |
| Published: |
01-09-2015
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| Online Access: | Get full text |
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| Summary: | Electrical capacity of power semiconductor devices is quite an important
parameter that can be utilized not only for testing a component itself, but
it can also be applied practically; e.g. in series-connected high voltage
devices. This paper first analyzes the theoretical voltage distribution on
the bases of the polarized p-n junction, as well as the size of capacity. The
measurement of the voltage-capacity dependence using the resonance principle
is illustrated on the samples of 4kV and 6kV thyristors. The correspondence
between theoretical estimation of the capacity, measured voltage capacity
dependence based on the resonance principle and experimentally determined by
injected charge proves the correctness of the applied procedures and
assumptions.
nema |
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| ISSN: | 0353-3670 2217-5997 |
| DOI: | 10.2298/FUEE1503495P |