Search Results - "Kohzen, A."

Design and characteristics of InGaAs/InP composite-channel HFET's by Enoki, T., Arai, K., Kohzen, A., Ishii, Y.

“…A design for composite-channel structures consisting of an InGaAs channel and an InP subchannel for use as heterostructure field-effect transistors is…”
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10-Gb/s high-speed monolithically integrated photoreceiver using InGaAs p-i-n PD and planar doped InAlAs/InGaAs HEMTs by Akahori, Y., Akatsu, Y., Kohzen, A., Yoshida, J.

“…A long-wavelength monolithically integrated photoreceiver which is capable of operation at a 10-Gb/s NRZ light signal is described. The photoreceiver was…”
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A 622 Mb/s high-sensitivity monolithic InGaAs-InP pin-FET receiver OEIC employing a cascode preamplifier by Uchida, N., Akahori, Y., Ikeda, M., Kohzen, A., Yoshida, J., Kokubun, T., Suto, K.

“…A long-wavelength monolithically integrated receiver optoelectronic integrated circuit (OEIC) comprising a low input-capacitance cascode transimpedance…”
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A 622 Mb/s monolithically integrated InGaAs-InP high-sensitivity transimpedance photoreceiver and a multichannel receiver array by Akahori, Y., Ikeda, M., Uchida, N., Kohzen, A., Temmyo, J., Yoshida, J., Kokubon, T., Suto, K.

“…A long-wavelength monolithically integrated high-sensitivity single-channel photoreceiver and a two-channel receiver array which requires only a single 5-V…”
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InGaAs/InP double channel HEMT on InP by Enoki, T., Arai, K., Kohzen, A., Ishii, Y.

“…The authors discuss a novel HEMT (high electron mobility transistor) channel structure, consisting of InGaAs and InP, which can utilize both the high electron…”
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Movpe Growth of InGaAs/lnAIAs Using Trimethylamine Alane Four Photonic and Electronic Devices by Kohzen, A., Tohmori, Y., Akatsu, Y.

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